UPA1604

UPA1604 NEC | Alldatasheet

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Technical content

COMPOUND FIELD EFFECT POWER TRANSISTOR uPA1604 MONOLITHIC POWER MOS FET ARRAY

DESCRIPTION

The uPA1604 is Monolithic N-channel Power MOS FET Array that built CONNECTION DIAGRAM in 4 circuits, Clump Diode and resistances designed for LED, Relay, Thermal Head, and so on. Sk O: kk _GND_ b O3 Sk

FEATURES

© Direct driving is possible by standard Logic IC or Microcomputer. Hatt) || Caste (4 V driving is possible) —s—ael © Output Voltage: Voipeak: = 50 V MAX. peshy || cteey Output Current: loipeak) = 1.5 A MAX. ind © Ron = 12 TYP. at: lo = 600 mA, Vi = 4.5 V Voo: 0; “GXIp” bk Or Vooo © Wide Operation Temperature: -40 to +85 °C ® Output Voltage Clump Diode built in. 3 Ootaut © Low Input Active Voo : Supply Voltage

ORDERING INFORMATION

Equivalent Circuits (1/8 Circuit) Please refer to “Quality grade on NEC Semiconductor Devices” (Docu- sk ment number IEI-1209) published by NEC Corporation to know the T° OUT specification of quality grade on the devices and its recommended . i applications. IN an * i—o end ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) Supply Voltage Voo -0.5 to +7.0 v Output Voltage Vorwe 30 v Output Peak Voltage* Voipeak) 50 v Input Voltage vi -0.5 to Von +0.5 v Output Current (DC) lowe) 870 mAJunit Output Current (pulse)** lo(puise) 1500 mA/unit Input Current hi +10 mA/unit Diode Reverse Voltage VR 50 Vv Diode Forward Current le 1500 mAVunit Total Power Dissipation Po 1.0 W/PKG Operating Temperature Topt -40 to +85 °c Storage Temperature Tota -85 to +150 °c * PW £10 ms, Duty Cycle $50 % ** PWS 10 ms, Duty Cycle $30 % Document No. IC-3372 Date Published March 1994 M. Printedin Japan © NEC Corporation 1994

RECOMMENDED OPERATING CONDITIONS (Ta = -40 to +85 °C) CHARACTERISTIC sympot | min. | Tye. | MAX. | UNIT TEST CONDITIONS [Beane me ep es Py woo | | | 840 | mavunit | DC, 1 circuit Output Current \\ ‘Alunit PW 10 ms, Stouseh mAUEN | Duty Cycle $20 %, 4 circuits ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC sympot | min. | Typ. | MAX. | UNIT TEST CONDITIONS Output Leakage Current | toon | | | to | na _| Voo = 5.5 V, Vi= 5.5 V, Vo = 50V Output On-state Voltage eee es Voo = 5 V, Vo = 50 V, lo = 100 wA Input Voltage Pett Input Current See Fig. 1 Diode Leakage Current ae Fig. 1 Switching Wave Forms and Test Circuits te t ve tov lo = 30% Vo = 5V Input 50 % oo = [10 % 100.2 out tere tan 5V 15 pF tm ma I \\ 90 % ) Output 50 % 10%

TYPICAL CHARACTERISTICS (Ta = 25 °C) Pr - Ta Characteristic lo - Vo Characteristic 1.0 x 16 See Nee eee LT Py piv |] | | ease |

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& ELT? TTT TTT | 3 04 WOLLLELLLLE| ¢ ~ELET TET | J CE] AEE 0 20 40 60 80 100 0 1 2 3 4 5 Ta — Ambient Temperature — °C Vo - Output Voltage - V Ron — Voo Characteristic Ron ~ lo Characteristic ¢ [PTL free] & “fewses TTT TTT gis 8 PSTTECeCELe i A s 5 i Newnan COMICON CT pt Nee go Mes TTT é CoS é LU a LTT Eos | 2 CCA sti i{TT itt t te 8 TU TEN TT pa b es [LETT TTT 2 ol LUM TTI TTT 0 5 10 0.01 0.1 1.0 10 Vpo — Supply Voltage - V lo — Output Current - A lo — Voo Characteristic Ron — Ta Characteristic —— | SS=—=5 oD ee SS SS SS Sc | 8 15 lO = my 2 | = 0 | rs a yA @ | + | SoZ | | 8 eT] | | Ld ee ee ee [Tf TT voriov if ool LI Pe eo ttt tt | | 0 1 2 3 4 5 6 40 0 40 80 Voo - Supply Voltage - V Ta - Ambient Temperature - °C

Iso — Vso Characteristic tru, trix, tru, truy ~ lo Characteristic

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2 . SES eee ' SS SS AS SS — A Fa | = [NET PT

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7 a ? SSN Sel = Lf TT fiw= sy _| © seo LN . ee Sa 3 po & a ool [| Tf | Paises | Fo) | ) 04 08 1.2 0.001 0.01 0.1 1 Vsp - Source to Drain Voltage - V lo- Output Current - A

• uPA1604CX 16PIN PLASTIC DIP (300 mil) 16 9 1 8 A K P ° VOID Oe uy o|=z F nie DmNm C8 M O~15" P16C-100-300A,.c NOTES | rrem | MILLIMETERS INcHES | 1) Each lead centerline is located within 0.25 i : _ maximum material condition. [ 8 1.27 MAX 0.050 MAX. a | 2) Item “K" to center of leads when formed —_}—_— | parallel. D 0.50°°° 0.020 °8:888 Fo 1.2 MIN 0.047 MIN | oH 0.51 MIN 0.020 MIN | i] 4.31 MAX. 0.170 MAX. J 5.08 MAX 0.200 MAX. Dok 6.4 0.252 M 0.25 8:88 0.010 ‘8838 N | 0.25 0.01 P 1.0 MIN 0.039 MIN

RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. TYPES OF THROUGH HOLE MOUNT DEVICE MPA1604CX : Solder temperature: 260 °C or below, Wave soldering ‘ Flow time: 10 seconds or below Reference Quality control of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. MEI-1202 Assembly manual of semiconductors devices. 1EI-1207 Semiconductor device package manual IEI-1213

[MEMO]

[MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6