UPA1603 NEC | Alldatasheet
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COMPOUND FIELD EFFECT POWER TRANSISTOR uPA1603 MONOLITHIC POWER MOS FET ARRAY
DESCRIPTION
The uPA1603 is Monolithic N-channel Power MOS FET Array that built CONNECTION DIAGRAM in 4 circuits, Clump Diode and resistances designed for LED, Relay, Thermal Head, and so on. Qs NC Ik GND fs NC Os FEATURES fie] fis] f4] 3] fr2] fi] fio} [9] ® Direct driving is possible by standard Logic IC or Microcomputer. od | | G— (4 V driving is possible) — © Output Voltage: Voweak = 50 V MAX. Le) | 4 a Output Current: lo(peak) = 1.5 A MAX. a By] © Ron = 1Q TYP. at: lo = 600 mA, Vi=4V Sk OG bh GND bk 2 SK © Wide Operation Temperature: -40 to +85 °C © Output Voltage Clump Diode built in. Ae rath
ORDERING INFORMATION
Equivalent Circuits (1/8 Circuit) Please refer to “Quality grade on NEC Semiconductor Devices” (Docu- sk ment number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended i our applications. re ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) l to en Output Voltage Vowwe) 30 Vv Output Peak Voltage* Voipeak) 50 Vv Input Voltage Vi -0.5 to +20 v Output Current (DC) lore) 870 mA/unit Output Current (pulse)** lotputse? 1500 mA/unit Input Current if £10 mA/unit Diode Reverse Voltage Vr 50 Vv Diode Forward Current le 1500 mA/unit Total Power Dissipation Po 1.0 W/PKG Operating Temperature Topt -40 to +85 °c Storage Temperature Tsto -55 to +150 °c * PW S10 ms, Duty Cycle $50 % ** PW S 10 ms, Duty Cycle $30 % See Document No. IC-3371 Date Published March 1994 M Printed in Japan © NEC Corporation 1994
RECOMMENDED OPERATING CONDITIONS (Ta = -40 to +85 °C) CHARACTERISTIC [ symeo. | min. | tye. | max. | unit TEST CONDITIONS es ee Output Current | PWS 10 ms, mAlunit | 1 ty Cycle $20 %, 4 circuits ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC sympo. | min. | typ. | Max. | UNIT TEST CONDITIONS output On-state Voltage Po ot | Input Current a - See Fig. 1 prone ee ff 50 | wk _| v= 50, Te= 25°C Fig. 1 Switching Wave Forms and Test Circuits te + te ve 10V lo= 90 % | | Input 50 % | ho % 1002 ; out TPRHL ‘teu trae ‘tra @) SV I 18 pF | 90 % J 1 Output 50 % 10 %
TYPICAL CHARACTERISTICS (Ta = 25 °C) P+ = Ts Characteristic lo - Vo Characteristic 1.0 x 16 SeeNeee eee LT BY tev] [| euses | f EEEENO EE naan BARREN HH 27 /s
2 Cecoocss eo : H j z
ee Sof | Tt | ed Behe - COeEe ere 6 ZOLLE PEPER ee #8 © ECercrcerrnr Vitter eri 0 20 40 60 80 100 0 1 2 3 4 5 Te - Ambient Temperature - °C Vo - Output Voltage - V Ron — Voo Characteristic Ron - lo Characteristic re ee i ieee PCTTRELET 2 nn co Preece ae S : wT PCO SSe 2 Se Sot OSE 8 Ceo 3 os z CU és {i iti tty y yy $ ee a eee eal TT “ 0 5 10 “ ° 0.01 01 1.0 10 Vi- Input Voltage - V lo - Output Current - A lo - Vi Characteristic Ron - Ta Characteristic SSS are ee ee |_| \\ lo = 600 mA Se 215 ¢ ae LET Tee | == oj | perl
6 SS SS gol
§ ef PP ee . SS oe onbttt Bie | Jt TI 0 1 2 3 4 5 6 ~40 0 40 80 Vi- Input Voltage - V Te Ambient Temperature - °C
Iso - Vso Characteristic ‘teHL, tein, trHt, tri — lo Characteristic Seas ae € EE & LLL ez _ Foo MRT TINT ETT) ee SC SSS SS ae - [sy / ° SUD Sef | LST ont | [ [f [ Pulses | 2 ol LUM TT UT Vso — Source to Drain Voltage - V lo- Output Current - A
- uPA1603CX 16PIN PLASTIC DIP (300 mil) 16 9 1 8 A K Pp ° VOI ee oy o}x F sh D cs mM O~15° P16C-100-300¢ NOTES ITEM MILLIMETERS — _ INCHES 1) Each lead centerline is located within 0.25 maximum material condition B 1.27 MAX. 0.050 MAX. 2) Item “K” to center of leads when formed —- — NS parallel D 0.50 0.02078 888 G 3.5708 0.138 #00 H 0.51 MIN 0.020 MIN ' 4.31 MAX. 0.170 MAX L 6.4 0.252 M 0.25 °8:38 0,010 78.835 P 1.0 MIN. 0.039 MIN
RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. TYPES OF THROUGH HOLE MOUNT DEVICE HPA1603CX . Solder temperature: 260 °C or below, Wave soldering ‘ Flow time: 10 seconds or below Reference Quality control of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. MEI-1202 Assembly manual of semiconductors devices. 1E1-1207 Semiconductor device package manual 11-1213 SMD surface mount technology manual IEI-1207
[MEMO]
[MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6