UPA1601GS

UPA1601 NEC | Alldatasheet

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COMPOUND FIELD EFFECT POWER TRANSISTOR uPA1601 MONOLITHIC POWER MOS FET ARRAY

DESCRIPTION

The uPA1601 is Monolithic N-channel Power MOS FET Array that built CONNECTION DIAGRAM in 7 circuits and resistance designed for LED, Relay, Thermal Head, and so on. Or Oz Os Os Os Os Or NC FEATURES hel fst fal f3] fr2] fi) fo} [3] © Direct driving is possible by standard Logic IC or Microcomputer. (4 V driving is possible) A A A A A A A © Output Voltage: Vo = 30 V MAX. Output Current: lo = 500 mA MAX. a TET el EI © Ron = 3 Q TYP. at: lo = 150 mA, Vis 4V t ek b k WG b& b GND ® Large Operation Temperature: —40 to +85 °C tt input O: Output

ORDERING INFORMATION

Equivalent Cireuits (1 unit) Please refer to “Quality grade on NEC Semiconductor Devices” (Docu- ment number IEI-1209) published by NEC Corporation to know the eo specification of quality grade on the devices and its recommended i applications. IN “re ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) Li GND Output Voltage Voroe) 30 Vv Output Peak Voltage* Voitpeak) 50 Vv Input Voltage vi 0.5 to +20 v Output Current (DC) lowe) 430 mA/unit Output Current (pulse)** lo(putse) 500 mA/unit Input Current ki +10 mA/unit Total Power Dissipation Pr 1.0 W/PKG Operating Temperature Topt -40 to +85 °c Storage Temperature Tstg -55 to +150 °c * PW 10 ms, Duty Cycle $10 % ** PW 5 10 ms, Duty Cycle £30 % SSS Document No. IC-3369 Date Published March 1994 M Printed in Japan © NECComporation 1994

RECOMMENDED OPERATING CONDITIONS (Ta = -40 to +85 °C) CHARACTERISTIC sympot | min. | typ. | MAX. | UNIT TEST CONDITIONS Faves ee Pe ce ee Output Current PW S10 ms, mA/unit a Duty Cycle $25 %, 7 circuits Input Voltage Pw Ps High-Level Input Voltage pve foe fv Low-Level Input Voltage [we Pv ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC symeot | min. | Tye. | MAX. | UNIT TEST CONDITIONS Cy wesiies 0mm | i= OV, Vo = ee See Fig. 1 Fig. 1 Switching Wave Forms and Test Circuits t t Veo = 10V 30% Input 50 % 0% 100 2 TPRHL PU ou 5V 15 pF tTHL ‘tru a les } Output 50 % 10%

TYPICAL CHARACTERISTICS (Ta = 25 °C) Pr-Ts Characteristic lo - Vo Characteristic 1.2 1.0

2 Teed [| TET

PE IN :” a a at || Pe | IN | | 3° an 5 (0.6 2 Pot | | IN | : 4 © on N goa | Ae 2 i At | tT Sal Goof 1 i 02 "| “LETT HT | VA i} 20 40 60 80 100 120 0 05 #10 156 20 25 30 35 Te - Ambient Temperature - °C Vo - Output Voltage - V lo - Vi Characteristic Vuom, Vaorr) - Ta Characteristic 0 16 SS SS NS | > en @ Yo = i fl |_| S08 y , « ,L] TT eer 212 y, [Ske i ee 2 2 Verneae E a ey A 2 | tt | yo = 100 7A [| a a a 2 o8 — , == « {ELT tT yy ft $ nlf || 7 er ee = 04 === — ett {tity ty tmL—t Lt} + 1 ott i | | tt 0 2 4 6 8 -50 t) 50 100 150 Vi - Input Voltage - V Ta —- Ambient Temperature — °C Ron ~ lo Characteristic Ron — Vi Characteristic a & a 3 tt LM TT ; 8 5 8

5 J s 4

o Wi y & pa eB) a S 2, Vie 4V ade Hi\\| Hy S| g anil 2, lo =200 mA _| 6 et 6 SUE TTT ; i ff LUI TTT Litt tt 10m 100 m 1 it} 2 4 6 8 10 12 lo ~ Output Current - A Vi = Input Voltage ~ V

Row - Ta Characteristic Iso ~ Veo Characteristic

5 SS ——— |

a — i —— 8, PET TE ee ee = 2 g 2 eS 5 3 Fr J Ss Sr Coe] +e ¢ 5 == 2 a Z § ome ff tf td oa 1 1 ———— 1 lo = 150 mA 3s Sees é Voav a 0 im TT -50 0 50 700 750 0 05 70 15 20 Te Ambient Temperature - °C Vso ~ Source to Drain Diode Forward Voltage - V Cise, Coss - Vo Characteristic tn, thus, tt, tn - lo Characteristic “0 v=o 2 10 SSS SSS Sere es =e uw NEEL LTTTT — ee F adN oe Siem 2 || | ANU maaiill = PS ee & 20 Th S ye Lee Sass a SES Sse ae eesss| 9 tt LLM TTT 2 ee See S bad =e Sop 2 ose Lf LE ETT * ee a 0 — iL LO PP Co 1 70 700 im 10m 100m 1 Vo - Output Voltage - V lo = Output Current = A

• uPA1601CX 16PIN PLASTIC DIP (300 mil) 16 9 1 8 A Ls Pp ° YOO Ooo ay o|z F ~tL D cs M ont! P16C-100-300AC NOTES a [irem | muumerers | INCHES | 1) Each lead centerline is located within 0.25 i 2) Item “K" to center of leads when formed = a F [new [0007 G 3.5409 0.138 *9017 H 0.51 MIN 0.020 MIN. [esr max [070 wax | | L 6.4 0.252 ee ee | P 1.0 MIN. 0.039 MIN.

—_ SESE TOOT * uPA1601GS

16 PIN PLASTIC SOP (300 mil)

OAR AAA A detail of lead end WMHHHHBEBE ° OAARAAABRAGA 7 8 A H oO IL J a | aa L w {oL_N_] B o[6[u@ P16GM-50-3008-3 NOTE MILLIMETERS INCHES Each lead centerline is located within 0.12 — bo [owe | ones | 0.201339 0.008°3

RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be set when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. TYPES OF SURFACE MOUNT DEVICE For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (IEI-1207). HPA1601GS Soldering process Soldering conditions Symbol Infrared ray reflow Peak package's surface temperature: 235 °C or below, Reflow time: 30 seconds or below (210 °C or higher), Number of reflow process: Inside of 2 times, Exposure limit*: None VPs Peak package's surface temperature: 215 °C or below, VP15-00-2 Reflow time: 40 seconds or below (200 °C or higher), Number of reflow process: Inside of 2 times, Exposure limit*: None Wave soldering Solder temperature: 260 °C or below, WS60-00 Flow time: 10 seconds or below, Number of flow process: 1, Exposure Limit*: None *: Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 °C and relative humidity at 65 % or less. Note: Do not apply more than a single process at once, except for “Partial heating method”. TYPES OF THROUGH HOLE MOUNT DEVICE HPA1601CX Soldering process Soldering conditions Wave soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or below Reference Quality control of NEC semiconductors devices. TEI-1202 Assembly manual of semiconductors devices. IEI-1207 Semiconductor device package manual 1E1-1213 SMD surface mount technology manual 1E1-1207

[MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6