UPA1600 NEC | Alldatasheet

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COMPOUND FIELD EFFECT POWER TRANSISTOR uPA1600 MONOLITHIC POWER MOS FET ARRAY

DESCRIPTION

The “PA1600 is Monolithic N-channel Power MOS FET Array that built CONNECTION DIAGRAM in 8 circuits and Gate Protection Diode designed for LED, Relay, Thermal Head, and so on. NC Or Oz Os Os Os Os O7 Os NC FEATURES bo fio] fs) f7] fel fs) fal 3] 2) fl © Direct driving is possible by standard Logic IC or Microcomputer. (4 V driving is possible) A A A A A A A A © Output Voltage: Vo = 30 V MAX. Output Current: lo = 500 mA MAX. [6] eT 1s] © Ron = 3 Q at: lo = 200 mA, Vi= 4 V GND h k b&b & b Ie b Is GND © Gate Protection Diode, built in. |: Input O: Output

ORDERING INFORMATION

Equivalent Circuits (1/8 Circuit) Please refer to “Quality grade on NEC Semiconductor Devices” (Docu- ment number IEI-1209) published by NEC Corporation to know the | T0 OUT specification of quality grade on the devices and its recommended H applications. INOW at ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) i +—0o GND Output Voltage Vo 30 Vv Input Voltage Vi -0.5 to +10 Vv Output Current lo 500 mA/unit Input Current h +10 mA/unit GND Terminal Current* leno 2.0 A Total Power Dissipation Pr 1.0 W/PKG Operating Temperature Topt -40 to +85 °C Storage Temperature Tstg -55 to +150 °c * Case of 2 GND terminals set up 0 V level Document No. IC-3368 Date Published March 1994 M Printed in Japan © NECCorporation 1994

RECOMMENDED OPERATING CONDITIONS (Ta = —40 to +85 °C) ee ee Output Current ., | PWS10 ms, mAMunit | Duty Cycle $50 %, 8 circuits ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC SYMBOL TEST CONDITIONS es Output On-state Voltage a LW [wetvinc ana ee Input Current Delay Time ee ee ee See Fig. 1 Fig. 1 Switching Wave Forms and Test Circuits t i Vo = 10V 20% Input 50 % [10 % 1002 ‘TPHL TPL — our Vv trae tu 6 I 18 pF \\ 90 % } Output 50 % mee 10 %

TYPICAL CHARACTERISTICS (Ta = 25 °C) Pr — Ta Characteristic lo - Vo Characteristic 500 a a [Pulsed _] 3 ,fupareoocx es TTT LL] as a ~ 400 i gs ~ T TNP TT i | g | tT KT 5 300 i ee é {ff Tt tT fl 2 os pen 5 ro foe a 3 } pee TT 2 eee oe Jr < Vi=2V a Za 0 20 40 60 80 100 = 120 0 2 4 6 8 10 Ta - Ambient Temperature - °C Vo — Output Voltage - V Vo - Vi Characteristic Vo - Vi Characteristic Pulsed Pulsed 5 (Vo = +5 V, Te = 25 °C) 5 (Vo = +5 V, lo = 200 mA) . < n)\\\\ eee 7 Ngee | | | | f \\ \\\\ es 3 4 nia Tou, = 1 mA a 4 = Tags eel ae ee SL Z 3 He a = 160 ma z 3 SLU on eee 36 2 Ketter = 500 mA 6 2 \\ SWNT s LET TTT | 1 | 1 No | | UNE | See o 12 3 4 5 6 7 8 9 10 o 1 2 3 4 5 6 7 8 9 10 Vi- Input Voltage - V Vi Input Voltage - V lyse - lo Characteristic Ron ~ Vi Characteristic ei SSS = eel a >

1 FE Pulsed H

g roo o ry [| i a SO 8 se 24 i= @ § of LL er TT Z, Nene ae ae & N = ay a OO DD £9 | a a A g pe ae | 8 || 2B Oh S 1 Se ; a ==== 2 ne Es a SS A 08 c ~ 10 10? 10° i} 5 10 lo - Output Current - mA Vi - Input Voltage - V

Ron — Ta Characteristic Ron — lo Characteristic a > llo = 200 mA} a [Pulse]

4 Pulsed 4

gf, a g , TTT I ee ol lll A — 6 5 [ea] PleereesT|] | § | PIFLL LLL EE 6.1 é 1 t D elLTLTTT TT] =: Ui Tl -40 -20 0 20 40 60 80 100 0.1 0.5 1.0 Te - Ambient Temperature - °C lo - Output Current — A lo - Vi Characteristics Iso - Vso Characteristic SSS | oS _ < Er <7 LA 2 10 LA va a £ ff po ebf~ pa 38 Ae Ae Cd a oa os 2 of 5 or a A ey a a ———— 2 FS Lb * eee eee [) 5 0 1.0 2.0 Vi - Input Voltage - V Vso - Source to Drain Diode Forward Voltage ~ V ‘tPHL, teLH, tru, trLH — lo Characteristic Ciss, Coss, Crss ~ Vo Characteristic 10.000 pr SSS 50 a S f21 MHz = TS 4 40 mS 2 soo INT LTT TT 5 SS s 1000 Ses, Se ee oe eal 5 aN ao oo 8 Ny iss eg ea ee 1 PNY bint sg CUM i oer si CS

2 SES Sey S10 Lit co

es d Lm aalilll | 2 ol CU TET 0 01 1 10 100 1000 1 10 lo - Output Current - mA Vo ~ Output Voltage - V

+ uPA1600CX 20PIN PLASTIC DIP (300 mil) 20 u 1 10 A K P aN > VUIO OO BOB aoa olz | A rf oth D c8 M o~t5" 20¢-100-300.C 1) Each lead centerline is located within 0.25 maximum material condition. 8 1.27 MAX. 0.050 MAX 2) Item “K" to center of leads when formed ~~ = — 1.1 MIN 0.043 MIN. G 3.508 0.138*0.0 H 0.51 MIN. 0.020 MIN. os iJ 5.08 MAX. 0.200 MAX. L 6.4 | 0.262 M 0.25 “8:88 0.010 78:88 P 0.9 MIN. 0.035 MIN

+ uPA1600GS

20 PIN PLASTIC SOP (300 mil)

Pi Pi ri ri i a a detail of lead end oO ae HHHHBHHHHoee & OOoOoOOoOoOoOanananaaa da 7 10 A H fo} L J | a i) Sorry A LN] L “ GIN 8 0 elu @) P20GM-50-300B,C-3 NOTE (TeM| MILLIMETERS | INCHES | Each lead centerline is located within 0.12 maximum material condition |B | 0.78 MAX. 0.031 MAX. 1.8 MAX. 0.071 MAX. 7.7403 0.303+0.012 a 0.12 0.005 0.10 0.004

RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be set when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. TYPES OF SURFACE MOUNT DEVICE For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (IEI-1207). HPA1600GS. Soldering process Soldering conditions Symbol Infrared ray reflow Peak package's surface temperature: 235 °C or below, IR35-00-2 Reflow time: 30 seconds or below (210 °C or higher), Number of reflow process: Inside of 2 times, Exposure limit*: None VPS Peak package’s surface temperature: 215 °C or below, VP15-00-2 Reflow time: 40 seconds or below (200 °C or higher), Number of reflow process: Inside of 2 times, Exposure limit*: None Wave soldering Solder temperature: 260 °C or below, WS-60-00-1 Flow time: 10 seconds or below, Number of flow process: 1, Exposure Limit*: None *: Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 °C and relative humidity at 65 % or less. Note: Do not apply more than a single process at once, except for “Partial heating method”. TYPES OF THROUGH HOLE MOUNT DEVICE HPA1600CX Wave soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or below Reference Quality control of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. MEI-1202 Assembly manual of semiconductors devices. 1E1-1207 Semiconductor device package manual 1EI-1213 SMD surface mount technology manval

[MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. . NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6