UPA1576

UPA1576 NEC | Alldatasheet

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. | E " COMPOUND FIELD EFFECT POWER TRANSISTOR N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE

DESCRIPTION

The uPA1576 is N-channel Power MOS FET Array that PACKAGE DIMENSIONS built in 4 circuits designed for solenoid, motor and lamp driver. pea ae FEATURES 2 © 4 V driving is possible © Large Current and Low On-state Resistance z loiputse) = +6 A al 2 Roston) £ 1.2 2 MAX. (Ves = 10 V) = Roston) £ 1.5 2 MAX. (Ves = 4 V) 14 © 2.54 mm Pitch (0.1 inch) 14 06204 2.54 0520.1

ORDERING INFORMATION

Please refer to “Quality grade on NEC Semiconductor 3 5 7 9 Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 2 4 6 8 ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) Drain to Source Voltage Voss 100 Vv 1 10 Gate to Source Voltage Vess +20 Vv Drain Current (DC) In(0c) 2.0 AJunit PIN No. Drain Current (pulse) | Ioiputeey® +6.0 Ajunit 24,68 Gate (G) Total Power Dissipation (4 circuits) 3,5,7,.9 Drain (D) <Te = 25°C> Pri 28 Ww 1,10 Source (S) Total Power Dissipation (4 circuits) <Ta = 25 °C> Pr2 3.5 Ww Drain (D) Storage Temperature Tstg —55 to +150 °C Junction Temperature Ti 150 °c * PW £300 us, Duty Cycle £ 10 % Body Diode Gate (G) Source (S) Document No. 1C-3361 Date Published February 1994 M Printed in Japan © NEC Corporation 1994

ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC symBot | MIN. | Typ. | MAX. | UNIT | TEST CONDITIONS gr [Gatto Source Leakage Guvert [kr | | | eo [ na | Vere sa0v.vee-0 | [cat to Source GutofVotage | Van [0 | [28 | V_| vere tov.p=1ma | [Forward TraetrAdritarce [ys] 0s [a8 [| 8 | Vastovibe1A | [Bain to Source Onatae Resins | Rom |_| 08 | 42 | @ | Ver tov.p=-1a ‘| [orain to Source Grate Resistance | Rosous || 10 [18 | @ | Veweviont0a | [out Copactance | toe ff 0 | | a Venn Fig. 1 Switching Time Test Circuit our Ves i hn 90 % ~ Rin lnoatr| 910% hesw ) PG.@) Ra= 109 |* vo Te woe Ve 9 10% f | | 10% 0 tetonl | tr toro] | [tr t=14s Duty Cycle $ 1% ) y

TYPICAL CHARACTERISTICS (Ta = 25 °C) TOTAL POWER DISSIPATION vs. TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE CASE TEMPERATURE 4 30 CTT TTT Ty Tritt

3 PT = CUNT

£ LLIN 1 1A crests operation $I TT creas operation an TENN 3 Circuits operation 8 20 FEN 3 Circuits operation

8 WT WONG 2 Circuits operation 3 NL ING 2 circuits operation

= ~LOOCRSSSS 3” PENS B MSS e PPT TT AANA CELE RSS UI e SRR SASS : SSX BECP ECS SSC) © COP TTT . HperSSs aN CoE ss) 0 25 50 75 100 125 150 0 25 50 75 100 125 150 To - Ambient Temperature - °C Tc - Case Temperature ~ °C DERATING CURVE OF SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA “CLL 0 eS i 67 Se ee PENCE TT Siecaatitias ce < 7 SY NY Slt IN < ELI SS c —— = ===-s—— SS = 60 3 eo oo S r | i NE a a 2 a0 IN & CE D ———$=== === 2 20 es a = io Pitti Ne ttc g

5 IN oo || TM TT THT >

te) 50 100 150 1 2 5 10 50 100 Tc - Case Temperature - °C Vos - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO FORWARD TRANSFER ADMITTANCE vs. SOURCE VOLTAGE DRAIN CURRENT Ves=20V oO Sos = 10v “tov KT LT ° ——— eee 6° sv NWN pam 8 so eet to < | | BV RAK Lt Sa ce Oa 4 svIN SST —€ (TC Tt A —- 5 av Neer < pe \\ 5 40 Yes 5 nl \\ 3 |_| sv 7 -—Annne 3 wo ee NH A (ZA 5 =a SEH § YY Soo i oe

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2 20, | | SO ee [AAT § coir ,ASGGeeeee ¢ CEM Ui 0 20. #40 60 80 100 ~ 04 05 1 5.0 10 Vos - Drain to Source Voltage - V Jo - Drain Current - A

SOURCE TO DRAIN DIODE CAPACITANCE vs. DRAIN TO FORWARD VOLTAGE SOURCE VOLTAGE 0S SSS Sra] 1000 SSS ly ‘ ARR i SSS S ottli Teel rope CT Bs A Sa 6 OS SSH § CEP prry yr 7 Poe FE § 01k MeezevZiv Pov [| | a a FS A A | < a A SS |

3 A 5 a SO

0.01 “EPI tt LT 0 ).2 4 0. 8 am 1 . 10 Vso - Source to Drain Voltage - V Vos - Drain to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE DRAIN TO SOURCE ON-STATE RESISTANCE S vs. GATE TO SOURCE VOLTAGE S vs. CHANNEL TEMPERATURE, Oe |) “Co | 8 ulsed 2 Ss g Pere ee bea oe fe -EE TTT TTT Eo a a

2 CTT s [ts | +7

2 12 AN CLE] 2 08 Ke ov | 8 e, rit ty yy Resets ce ao co att TT peg SCC ’ je § opt t CPP PP reer + okie) [ [TT | Zz 0 40 80 12 16 20 2 -50 0) 50 100 120 = Vos ~ Gate to Source Voltage - V © Ten = Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE S vs. DRAIN CURRENT TRANSFER CHARACTERISTICS, ed === s 5.0 <0 == ) 1.6 = “ECs pee Bia aot dl ===> = co a | 3 on i/o poo Or Se 3S | a | SA 2 wLoLEEi CCH ae See E ==—— == — st TTT A ——— a pt A es © of | TTT TTT ooo Lt 1 Hitt ++ +t = lo ~ Drain Current - A Ves - Gate to Source Voltage - V

GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE SWITCHING TIME vs. DRAIN CURRENT > een ) 2°CT TTT ee 2p ee ee gS lo = 1mA © 500 SS P.COCPCeE Sob ee aa S = 30 ee ee © 100 ae 3 5 === Se 2) — tty 8 20 BH Se g 2 a ee 6 Foereiin Croom + L ® - == === See 3 1.0 2 5.0 °o = SS A A 8 t z fees att jot Tt J oleae TENE TTT > -50 O 50 100 150 0.1 05 1.0 5.0 10 Ten — Channel Temperature - °C. lo — Drain Current - A Reference Quality control of NEC semiconductors devices. ‘TEI!-1202 Quality control guide of semiconductors devices. | MEI-1202__‘| Assembly manual of semiconductors devices. 1E1-1207 Safe operating area of Power MOS FET Appication circuit using Power MOS FET TEA-1035

$$ SSE {MEMO} No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of Patents, copyrights or other intellectual Property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications ) or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 926 eee