UPA1572H NEC | Alldatasheet

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NE C ELECTRONICS INC 48 Dey b427525 OO19115 0 | T-Y3:25 . . PRELIMINARY SPESIFICATIC: WH ¢ nae MOS FIELD EFFECT POWER TRANSISTOR AR?-" Bsc-aCn Device Lu Pp yal 57 aL “PAST =: OLS : FAST SWITCHING N-CHANNEL SILICON POWER MOS FET ARRAY eee PACKAGE DIMENSIONS fora . in sil lizeters *Suiteble for switching pover susziies. - 3 wax 40 actuater centrois.ond pulse circuits SS i : * Low ROSCon) 2! y Ho second breakdown 1 ( TT LEL 7 He i i Hs ABSOLUTE MAXIMA RATINGS ( TaeS"°C-) Coe oe OE we ET, Drain to Source Volisze VOSS .etY wit ti. i : Gate to Source Voitage .VGES 220V Sit .. Continucus Orin Current 1D(CC= 28 . eenest . Total Pover Dissicaticn PT 2.5% 24/8.8i¢ate ; Total Power ee e ne . 3.8.7,8:0rain ah ease ree weer : orsge Tesrerciure Tstg -FE~iS2 T 1,10:Scuree . curse stca28T ELECTRICAL CHERAGTERISTICS ( Tas2ST ) CHARACTERISTIC 1 symen [RIN. [| Tye. MAX. [UNIT | TEST ConoITioNs | Drain Leaxage Current (pss 10} wA | VOS= 66¥, VGS=0 Gate to Source Leakage Current tess e100 | na | vase=cov,vOS=) Gate to Source Cutoff Vol tage VosCot#) | 1.0 2.5| V | VOS=i0V, IDstzA Forward Transfer Adai ttonce lyfst! Jo.5 S$ |VOSsiov, [D=tA Drain to Source On-State Resistance | ROSCon) 9.40} O.8q © |vasetov, I0=ta 0.00] 0.2 | vases, IDsiA Input Cspaci tance Ciss 200 pF |[VOS=10V Outeut Canacé tence Coss 7 pF iiveseo Reverse Trans?er Coracitance Crss 15 pF Sis Turn-In Selsy Tise * te€cn) 4s as [(iteta , Vecs£5V Rise Tize tr 40 ns |vesen}sicv Turn-Off feisy Tise teCort) 469 ns [aueso a Fall Tize tt 110 ns | Mer.28.723 ID-i7s¢ a — NES anno: assume any easconscnty “St inv titewts EROWN 2f reoresent that MID Ale eeacinn

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NE C ELECTRONICS INC 94 vey 6427525 0019117 4 T 7°43 25 NEC ssi : . uPATs72H POTTAD TRUST ACSITTANCS " souncz To D2a1N Diese . YS. ORAIM G2EEiT FOSSARD YCLTAGZ : rrr] 10 aT bone ———SSSS=ss > SSS £ Conn aa ar BR a = Fi a a <3 —— eee LL ee EC CO * RRR oa ens 7A W-Drain CarrenteA YSO-Source to Drain Yoltsge-¥ oe " eapserTANCZ ys. DRAIN 70 DRAIN TO SOURCE CN-STATE ZESISTANCE SOVICT YCLTAGZ . Ys. GaTZ TO SCURCE YOLTAGE © eo Be eee 0 ee 83 aati tt tt . 3 (TSS 23 at Ulm td | tt ot tf e LOOPS E gs “CPW oe 4 a i] at Os of) a a CC cit ae Err tte » Feeeotiil Coil) (cee “Lo uo. 30 100 o 4.0 80 a2. as 20 — . YCS-Srsin to Scurce Yoltsze-¥ YGS-Gate ts Scurce Yoltsge-¥ DRAIN TO SOURCE CN-STATE RESISTANCE DRAIN TO SOURCZ ON-STATE RESISTANCE vs. CHANNEL TEXPERATURS. vs. DRAIN CURRENT “OTT TT TEE] ies a ‘ge s. 1 tet th a ee ee

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NE C ELECTRONICS INC 498 bey 6427525 0019118 & I T-43 “25 ‘_uPALsT2H ‘ NEC ase cons . GATE TO SOURCE CUTOFF YoLTAcE ‘TRANSFER CHARACTERISTICS to chum Hepes 20 = 7 4.0 = . Fp . ime Coco i weetiwee gf. £02 — Ge 20 r i : ree tL {| | [| & oe S= Ltt! prs & Ssanifaneoe Be we 1 o.co [ee ° ue 1.0 2.0 3.0 40 3.0 250 ° 30 + 100 1s0 YGS-Gate to Source Yoltsse-7 ; Toh-Chsnns! Tesperature-T . TURNSM AND TEENA TIE nt . Fe ——— & 500 moses foH!? —a : = o ——. = = ‘e Tt it a aT . 5 = sco CUT ee i] , = 50 — fa PU tt == —OwWSSS=SSSS SS =. Toc so [gee sexe serene HIT, TT TITTY ID-Srain Current-a a NES Corgcraticn INTERNATICNAL ILECTAON CEVICIS SIV. NEC Juneing, 55-3, Shiva Gocnome Minato-<u, Toxvo 108, Jaoan : Tel: Texve dSd—tytt . : Tex Accress: NECTOX S22585 . Cacie Acoresa: AICRCPHONE TOXYC