UPA1570H NEC | Alldatasheet

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"NE C ELECTRONICS INC 98 DEBpe4e7se5 OOLNIL 3 Ff 7-43-25 . ve PRELIMINARY SPECIFICATION NEC MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE ‘ oy ; 7 ‘€) A

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  • 3" “FAST SWITCHING , .IN-CHANNEL, SILICON POWER MOS FET : P ne nial Suitable for switching power supplies, in ail leeters he actuater controls and pulse circuits ee = 4V Gate Drive —— Logic level —— . ° . : Low ROSCor) “ly . : No second breakdown — aly vy AT Uz. TO RULEETEET) Te) Absotute Maxinun Ratings(Ta=25°C) ) pr ome TE DE eee Orain to Source Voltage voss sey : ne ect Gate to Source Voltage VGSS = 207. "* Gareeceeee! = S244 StCate Continuous Drain Current . ID(DC) £2.98/uni= Co TERGg area 3,5,7,8:0rain |. Pulse Drain Current ~~~: ID¢pulse)#28.03/un: ; ane me 1,10:Source’ Total Power Dissipation PT 3.54 og s ? ra Total Powtr Dissipation PTE 28h . f i t if Ganrel Tesperature Tch 150 °C “og. ra 6. Fy orage Temperature Tstg -E5to+!50 °C HHO + + # PYS100 ws,Duty Cycles $2 > ; Lee T0225 + Electrical Characteristics (ia=25 °C) . Characteristics | Symbol |tin. | tye. | tax. | unit | Test Conditicns | tS~ fF Drain Leakage Current 10SS . 10} wA | VOS=30 V,VGs=) | Gate to Source Leakage Current iGss 100} mA | VGS= 20V,VDS=0 \\ Gate to Source Cutoff Voltage VGSCoff)} 1.0 2.5/ V | VOS=10V, 1D=1.0n4 | * ?) Forward Transfer Admittance lyfs| 1.0 S | VOS=10V,10=1.04 ‘ || Orain to Source On-State RDSCon) 0.35} Q | VGS=10V, 1D=1.C4 t Resistance i Drain to Source On-State RDSCon) 0.50) Q | VGS=3.0V [D=1.04 : Resistance | Input Capacitance. ~ Ciss 270 pF | VDS= 10V | . | Outgut Capacitance = _ Coss 150 pF | VGS=0 i; . Reverse Transfer Capacitance Crss 70 pF | f21.0MHz | Turn-On Delay Time td(on) 45 ns | 10=1.0A, ; Rise Tine . tr 40 ns | VGSCon)= 1C¥ ' . Turn-Of# Delay Tine te(oft) 450 ns | Vecti5V, i . Fall Tize tf No; ns | RL=15 Q ! a / they ara free ftom oatent iniringerent.

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. TURN@ON AND TURN-OFF TIME TEST CIRCUIT . Gate “es 095 ae th ate [ ; " pure . Wave | 920 26— [resem . {o = Ly ferm | | Cc . — “ec Rin FJ ry a i re) Rinelo o ; i 7 ; li lo i = Bea] eteteee! thie Oo wy all Vin form — taon) = te tacetna ty [eI . ‘ten ‘teit wel ys . Duty Cyciesi 2% . penrne FACTOR OF Fommnd pus FORWARD BIAS SAFE OPERATING AREA SAFE OPERATING AREA *10btb (puts p= a ™ SRO DAR RA Pe wee ANG “ER TTIXELEL ob aE LINE i: rr g * & a EL | i NUT] £ Soom Ta . z* ised LL e nD cy CJ © 10) 120 400 1 10 icc TC-Case Tesperature- WOS-Crain to Source Yoltage-¥ , my . . DRAIN CURRENT vs. DRAIN TO Be ere __ SOURCE VOLTAGE .. . _ SOURCE VOLTAGE a Tt: 8 . SS CI am g Coons [ {| 1 . & TINT ALTA oat < § Coogee ee . pes Nee 8 a a a = WAT i - 3 moose fm Tit ttt = peo SS z J ved t | Bo poor SSF — COCO T SS VTTTT itil. 0 a 0 ET 100 is 189 fe) 2 4 6 & CASE TEMPERATURE CC . . . YOS-Drain to Scurce Yoltase-¥ : oo : oe

NE C ELECTRONICS INC 98 DEM b4e27S25 0019113 7 T T-+43°25 VEC ascron cence 1590 ; * FORYARD TRANSFER ADMITTANCE SOURCE To DRAIN DICD . e vs. DRAIN CRRENT - FCEYA2D YOLTAGZ p1cne 3 ee 2 poe? ee ae é wie TT Pee ee ——— Ee ul 2 2 eee eT 2 —— TT z eet Roatectel 1 ee a ——— 53S rt a ag SEES ES ' ene] a a 1D-Drain Current-A YS0-Source to Drain Voltage-V¥ CAPACITANCE va. GRAIN T0 DRAIN TO SOURCE ON-STATE RESISTANCE . SOURCE YOLTAGE fe SATE To source vouracz 4C00; Were el {| | | Tosia —— ee Jot So - . Ps trers et ES [l- tr | | [ | | | ae a ——— 7 OG A at .

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1 a) 700 30 150 . YOS-Drain to Source Yoltage-¥ VGS-Gate to Scurce Voltage-¥ DRAIN TO SCURCE ON-STATE RESISTANCE DRAIN TO SOURCE CN-STATE RESISTANCE” . vs. CHANNEL TEMPERATURE vs, DRAIN CERRENT od He TT Th rf 57 od HUTT a &8 04 £3 o« 2 Ulli ll es ee Ne 3 s ; ee eT EP Bs Tt of LITT TUT CHIT - Oo 50 100 160 0.01 On “4 10 Tch-Channe! Tesperature-"C WD-Drain Current-A 3 Ft pings sone mene wees .

NE C ELECTRONICS INC 98 vey 6427525 GOLLY 49 I-- Y3°25 a sag PVE © storey ce.c: ee EG een: my Vag 10 VI | vent A —$— . Lies a — serrpemetttiy 2s ° oe | i] | e 2 an ' + EIT Pi feeweet 1 1 14 . sl a SC) oF 50 15 70 YGS-Gate to Source Yoltage-¥ Tch-Channel Tezperature-"C SWITCHING CHARACTERISTICS : . . oo =°A? . : Eee oe - £ LSS . Fi F-Pt tt Ht . lI ‘ 1 gM CTH | = oes ri TN ~ Ft LUMI TUM TUT 3 . Oni Of 1 70 ; Ip— Oran Corremt= A, NEC Corporation : : : INTERNATIONAL ELECTRON DEVICES Div, ws, NEC Builcing, 32-1, Shita Gocheme . Minato-ku, Toxyo 108, Japan ~~ Tel: Toyo 454—1111 . Telex Accress: NECTOK J22686 Cable Acaress: MICACPHONE TOKYO