UPA1556A NEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98.2
; . | = 7 COMPOUND FIELD EFFECT POWER TRANSISTOR N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE
DESCRIPTION
The yPA1556A is N-channel Power MOS FET Array that PACKAGE DIMENSION built in 4 circuits designed for solenoid, motor and lamp in millimeters) FEATURES e © 4 V driving is possible © Large Current and Low On-state Resistance z Io(puise) = +20 A 2 = Rosion) = 0.20 2 TYP. (Ves = 10 V) a Roston) = 0.25 Q TYP. (Vas = 4 V) 1.4 © Low Capacitance Ciss = 700 pF TYP. Tn obt01 2.54 0501 © Gate Protecter built in. © 2.54 mm Pitch (0.1 inch) SuESESEnES | I ORDERING INFORMATION 12345678910 CONNECTION DIAGRAM Please refer to “Quality grade on NEC Semiconductor i L Devices" (Document number IEI-1209) published by NEC | laa Corporation to know the specification of quality grade on 2 1 4 6 im 8 ft the devices and its recommended applications. _ L | 1 10 ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) as ~ Drain to Source Voltage Voss 100 Vv Gate to Source Voltage (AC) Vass +20 Vv PIN Ni Gate to Source Voltage (DC) Voss +20,-10 V & 6 Drain Current (DC) loc) 5.0 AJunit Fee eB Drain Current (pulse) ID(pulsey* = +20 = AJunit 1.10 Source (S) Total Power Dissipation (4 circuits) <Te = 25 °C> Pri 28 w Brain (0) Total Power Dissipation (4 circuits) <To = 25 °C> Pre 3.5 w Gate (G) | 4 % Body Diode Storage Temperature Tag 55 to +150 °C a Junction Temperature Ty 150 °c | + * PW£ 10 ys, Duty Cycle $1% biey Gate Protecter O Source (S) Document No. IC-3348 Date Published January 1994 M Printed in Japan © NEC Corporation 1994
ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC symeot | min. | Typ. | MAX. | UNIT | TEST CONDITIONS ) Gate to Source Cutoff Voltage [vesom [| 10 | | 25 | Vv | Vos=10V,lo=1mA Forward Transfer Admittance [lvel [ 40 | [| S | Vos=10V,l0=3A Drain to Source On-state Resistance | Rosinn | __—«| (0.20 | 025 | @ | Vos=10V,lo=3A Drain to Source On-state Resistance | Rosin | | (0.25 | 033 | Q | Vos=4V,lo=3A | Reverse Transfer Capacitance | Gm | [go |_| NOME | Turn-OnDelaytime | twos Ps Ts | ea | RiseTime veows0V Ip = [Diode ForwardVotoge | wees [aa | | | w=sa vara Fig. 1 Switching Time Test Circuit 7 DUT Ves oA (Body SR * 90 % wo! UF Diode) Ves [ sw) [ Re Hieron) 10%. dh °G.@) Re= 100 I I” | * - io 90% 20% r view Va lb | pmt| +. | |\\10% o—4_ weer) Oct tow | le iM "| t=1ys Baty Eycle $ 1% Fig. 2 Gate Charge Test Circuit Dur Is=2mA Re Voo < @ oe | |
TYPICAL CHARACTERISTICS (Ta = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 00 EG
2 SSS ee
So EET TT TT Seer Seilime agaria MCONCCCCE) — ; eS & fp 000) Sg Pn g 0 aN z Sao 2 40 i ee
8 Pi tt EN EI ey a ST
5 ESS
° N 0.01 Single Puse | TUTTE TT TTT] 0 20 40 60 80 100 120 140 160 1 10 100 Te - Case Temperature - °C Vos - Drain to Source Voltage - V TOTAL POWER DISSIPATION vs. TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE CASE TEMPERATURE 4 30 co “COs ER : TENE 5 3 ~ 4 Circuits operation gs LET NET DE acitcuits operation
3 BERANE 3 Circuits operation 3 20 = eENG 3 Circuits operation
2 CTIA Zaeuts onzzation BLINN ENG Z circuits operation
ay N NX 1 Circuit operation SB LET TANT RS Circuit operation _ 2 TT ANS TL B FFA RATT TT é SESS & OLD ESZANACCO =» CLUS 2” SKONS zs , TSS = LE] | | AANA TI POCPEEETRSS FF FERS PTT TT IN COC eCC lr ess t) 25 50 75 100 125 150 0 25 50 75 100 125 150 Te - Ambient Temperature - °C Te - Case Temperature - °C DRAIN CURRENT vs. ~— DRAIN TO SOURCE VOLTAGE TRANSFER CHARACTERISTICS 20 => a ——— Z| === . JA . Poorer | | fT SL | Ze 5 12 YC 5 ES Se SSS rs Y/| < [fe ] PIAL) Of SSeS == 1 1 _ So es ees | 2 4 lA 2 i SS | A A SS SS Poppe) SEER a orL | TP P| Paisea 0 2 4 6 8 10 12 0O 2 4 6 8 Vos — Drain to Source Voltage - V Ves ~ Gate to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 3 10 SS SS SS SS Sa 8 0 caer a
3 Fa Ee
eg ae | | 2 eS a SS ot € UC ATTI Im AAI {IGN OE ATUI| GG ENO 1I| GOOD AT eae ee |
5 SSS SSS SS SS et
& ERR SSS Sec |
1 Se eh pe Hh Sica |
gon CDi Foi Cri TT Singte Puise é 10u 100 im 10m 100 m 1 10 100 1000 PW - Pulse Width - s DRAIN TO SOURCE ON-STATE VOLTAGE DRA ORREN TS Eh ADMITTANCE vs. S vs. GATE TO SOURCE VOLTAGE o URS aa 2 ~ eR Sze g Pulsed 8 ae 2S os s Oe ra t -OARG 2 ee 4S lll 5 08 [~i=zsa |
5 ZA SHE BE S l joa25A
é 1 BREE 125 °C SEE 2 ee & Fee See 3 04 FH 8 Pz a AN 2 U eg ee e IX beta & EE PEP Tri § 02 _ = LLU T pss ; ES Pulsed 3 _ 01 1 10 Ss 0 4 8 12 16 20 lo — Drain Current — A Ves ~ Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE GATE TO SOURCE CUTOFF VOLTAGE vs. S vs. DRAIN CURRENT CHANNEL TEMPERATURE 2 06 > 2.0 Sot UM EME UTI eA] ELT I 3 05 oa _ SCOOT “PSS & y $2 [oN —| # “Cohen CO : _ 2 ee | : 3 02 eae go eta IME TT j < 3S 04 gs 04 lon 3A 1 Vos = 10 V L 0 Pulsed 3 0 lb=1mA 8 0.1 1 10 100 = *-50 0 50 700 150 = Jo - Drain Current - A Ten - Channel Temperature - °C.
DRAIN TO SOURCE ON-STATE RESISTANCE S vs. CHANNEL TEMPERATURE BODY DIODE FORWARD VOLTAGE 8 06 100 SSS SEES
8 SSS SSS
& 05 W4 € a a CUOTBZt| | BeBe Bas yi gs fp Feit 3 2 == SS SS & lo=3A 8 ee z -50 0 50 100 150 () 1 2 3 « Ten - Channel Temperature ~ °C Vso - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING TIME vs. DRAIN CURRENT ~ 10 000 peceg. op -ppee ge Spee 10 000 ee Ey eee a f = c _ ee et oe
6 ERASE , eat
8 1 000 eee ETE cn EH E1000 fee dL a ERS PSEC pie 6 See ee Sa) ae Es S| 2 100 eee eee
6 EERE Go PE 2 ESS Set
ETI en 2 ETI) oo = 80 0.1 1 10 100 0.1 1 10 Vos - Drain to Source Voltage - V lo - Drain Current - A REVERSE RECOVERY TIME vs. DYNAMIC INPUT/OUTPUT CHARACTERISTICS REVERSE DRAIN CURRENT 100 10 120 . y von= ov] ~ eg mae ee ~ A} oy | ee ee Z|
8 OY Se ee eo |
3 ot AA es ee |e OT A ee ee ee cae Bg OP eri rr 2 1 We 42 8 ob —ae i TTT g AKL | 8 g a 7 20 AN TT oa 20 ey tf ET ANGE lL 0 oL TT TIT Ives= 0 0 4 8 12 16 20 01 1 10 Qs - Gate Charge - nC Ir - Diode Forward Current - A
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications _ or they intend to use “Standard” quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. Ma 92.6