UPA1552H NEC | Alldatasheet
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NE C ELECTRONICS INC 98 DEffb4e7ses 0019203 4 | ae 73°25 . . PRELIMINARY SPECIFICATIC.' MES . : MOS FIELD EFFECT POWER TRANSISTOR AP*S” & 4 Al , FAST SWITCHING ‘ N-CHANNEL SILICON POWER MOS FET ARRAY ee PACKAGE DIMENSIONS roanees In allliceters ‘Suitable tor switching over surplies, = M.3MAX 40 acmaisr centrois,and pulse circuits | fal * Low RDS¢on) in y No second breskdcun : Ny 3 . f ad ek He ve A ABSOLUTE MAXIMS RATINGS ( Tas28 T ) Loe le ofan TE aso - Orin to Source Voltzge " VOSS = ferrrrrrorry Gate to Sov.ce Voltzze = GSS. HOV BEPUTTETET) ot Continuous Orsin Current ID(DC)== $A : , ; Tots! Power Dissipaticn PT 3.50 24,8.3:6a8 Total Pover Dissipation PTE 22 BE TSrin Chane! Tesnersture Ter 180 {.10:Seuree Storage Texcersture Tstz -S5~i59 T HestT ELECTRICAL CHARACTERISTICS ( Tae2S°C ) CHARSCTERISTUC |sveou_[aia. [tve. [eax. Lunt i test conoitions | f Orcin Lecazge Current oss 10| wa [Voss 6ov, WS=) - Gate to Source Leshage Current less lt:co | na | Voss=20v, vis Cate to Source Cutoff Yoltaze vestof#) | 1.0 2.5] V [vosstov, IDstza Forward Transfer aulsittance « tytsi |] § $ |vnsstov, Ih=ca Orain to Source On-Stste Resistance | ROSCon) Out] 0.84 a | veseiov, IEA : : 0.17 | 0.25 QlyGssay, Issa . Input Copsei tence Ciss 300 pF i{vosstov Gutput Capaci tence Coss 380 pF ilvess) Reverse Treaster Capsci tence Crss 20 pF frsiniz Turnedn Detzy Tize taCon) to ns |fineca, Verssov Rice Tise tr 40. ns {[veston)=icv Turnedtt fetay Tise tof) 10 ns || alet7 @ Fall Tize tt 20 as Rinziog Mar2s.¢Sé5 1-177 eee MET rennet assume any aszcstisety ter any rerehts SNOW OF veormsent Int MID Da eseratien
NE C ELECTRONICS INC 48 ey 6427525 0019104 &b I7 "'V~¥3-25 "squaNeoM AND TURNSCFF TIRE TEST CIRCUIT . n cae | “SS [Wena pure: . Vowtage to w-k [Yescm : jE t , form ° | | 5 “es . wT | ° 50 33 i pa(Tr) Rinaio'a if li | i. u in 7 coe . Ip N rad Bai | Bote | to% “oO ee cc ee ta(on) 5 br tacoit mh . LI : ton ‘teit sis . aty Cyeesi 2% + RUT FAS! GF TORE SUS FORTARD BlAS SAFZ OPERATING AREA ——— 0 100 wee . as : TTMIRS SOR. + pe E10 -”* Se re aed ‘ | | ‘\\ | | ] | | E : STM ATMs MT TTT D 2 «6 : | ! ty | | | Fs Pops LC * “LTT Ee sit aT TT 0 20 40 60 80 1C0 io 140 160 0.02 . O22 1 10 100 ices TC-Case Tespersture-C W0S-Drain to Source Yoltage-i TOTAL POTER DISSIPATION ys. : DRAIN CURRENT vs. DRAIN 70 CASE TENPERSTURE SOURCE YOLTAGZ 40 20 7 . Ltt ttt tte vdtAeo | 1 | 1 tt ™ Wi tobe so g [Ltt tt itt tt = om TT < (a & tt LAAT TL desis | ¢ Vitti titi
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INC 58 DEM 427525 0019105 8 [r-73 -25 FYE asercy cence : : utstesou FORSAZD TRANSFER ADSITTANCS SOURCE TO DRAIN DiCTE vs. O2MN CU2R5iT FORSARD YOLTAGE ie! oT
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NE C ELECTRONICS INC 48 DeEffb4e7ses oolI1ob of 7-v3-25 me eeen = PEC nsec cevicz . ' GATE TO SOURCE CUTOFF VOLTAGE TRANSTES CHARACTERISTICS YS. CHANNEL TEIPERATURE n : = oO n : 3.0 ” on a a FLT g ea ae a a af mee pt otal aq er ae i ———— - a | COCA rn rr er ert mer ° 40 20 a9 160200 YGS-Gate to Scurca Yoltage-¥ Toh-Channe! Tesrerature-"C . TUEN-ON AND TURN-OFF TIE , Fogg ECR illlegedees (11TH fo. ; eal LIfe ctaal LU . SSSSSSSSSS======= » LUT EE LP
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a NES Corporation NTERNATIONAL ELSCTACN CEVICIS DIV. 48S Juucing, 23-3, Shica Goenome Ainato-<u, Toxve 108. Jaoan ‘el: Teave 38a—t311 . “eves Acsress: NESTON SSises se Accress: WICRCPYCNE TOKYO