UPA1527 NEC | Alldatasheet

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' , | = c COMPOUND FIELD EFFECT POWER TRANSISTOR P-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE

DESCRIPTION

The uPA1527 is P-channel Power MOS FET Array that built in 4 (in millimeters) circuits designed for solenoid, motor and lamp driver. 26.8 MAX. =f FEATURES o © 4V driving is possible ~ ~ @ Large Current and Low On-state Resistance Zz re ID(putse) = #8 A a = Rosion) $ 1.0 2 MAX. (Ves = -10 V) 7 Ros(on) $ 1.5 2 MAX. (Ves = -4 V) oe 2.54 bee01 © 2.54 mm Pitch (0.1 inch) 14 0620.1 * ORDERING INFORMATION TTT Part Number Package Quality Grade uPA1527H 10-Pin SIP Standard ELECTRODE CONNECTION 2,4,6,8 GATE Please refer to “Quality grade on NEC Semiconductor Devices” * Sn 9 CoURCE (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its PIN CONNECTION recommended applications. 3 5 7 9 ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) Drain to Source Voltage Voss -100 v 2 4 § 8 Gate to Source Voltage Vessiac) +20 v 1 10 Drain Current (DC) In(0c) ¥2.0 A/unit Drain Current (pulse) Ip(pulse)* = 8.0 = A/unit Total Power Dissipation (4 circuits) <Te = 25 °C> Pr 2 OW Drain (D) Total Power Dissipation (4 circuits) 2,4,6,8 ; Gate (G) <Ta = 25 °C> Pra 3.5 w 3,5,7,9 ; Drain (D) Channel Temperature Teh 150°C aac 1,10; Soures (S) Storage Temperature Tstg -55to +150 °C * PW § 300 us, Duty Cycle $ 10 % Source (S) Document No. IC-3333 Date Published December 1993 M Printed in Japan © NEC Corporation 1993

ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC sympot | min. | Typ. | Max. | UNIT TEST CONDITIONS D) Gate to Source Leakage Current [ iss | | sd #100 | na_| Ves =#20V, Vos=0 Drain to Source On-state Resistance | Rosine | | —Ss| 18 | ‘| Ves=-4V,lo=-0.8A f= 1.0 MH — Ves = -10 V | fisetime eo ee Turn-Off Delay Time | tom [| to [ne | Re = 500, Rn 1080 See Fig. 1 - Fall Time pe TP wo Pine Fig. 1 Switching Test Circuit Dur Ves = AL ‘ Ves 10% Rin weve Form Nesei/a0 % PG.@) Ra= 100 I< at + f — . 90 % ls0'% +. — t=1 Duty Eycle 31%

TYPICAL CHARACTERISTICS (Ta = 25 °C) ~ TOTAL POWER DISSIPATION vs. TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE CASE TEMPERATURE ; DOT s FPN & LINE TL cei ertn £ [ACEC ET cereus operation © NXT (Zecca ert B= NN Zc cnton

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& CLL SAI © 10 [| TAN XAT TTY s , RN TT 2 PCOCC MAKES " CUE ASX a aE ee L SN & TOSS * LUT TTTT TTT USS Cee eee SS 0 25 50 75 100 125 150 0 25 50 75 100 125 150 _ Ta - Ambient Temperature - °C Tc - Case Temperature — °C DERATING CURVE OF SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 8 710 ee a Ee eo tt TT SS 3 100 XN SNE F owes MAX. meet eNET TTT) sy Res A % rt | NEE] 2 a a £20 6 LLU io 20 It EELN [age THI LET ' -oor [Single Pulse] TT TTIT TTT TTT 0 50 100 150 -1.0 -10 -100 Tc - Case Temperature — °C Vos — Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO FORWARD TRANSFER ADMITTANCE vs. SOURCE VOLTAGE DRAIN CURRENT 80 = ee ny 4a § ok eee NT [FL | [v=o] | | BEE Zn ee es ee es ee ee | 4+ | 2 Sonl_t | THM TT iil Vos — Drain to Source Voltage - V lb - Drain Current - A

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GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE SWITCHING TIME vs. DRAIN CURRENT > 1 000 pee 7 4 Baa o)»6— SERRE REE HY 2-30 1 NSE s. @ SN | $ & CO erm Fron 5 rFrTrTfrfeel 2 COUNT TT TO 8 ote _| 6 FT TTI

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2 € a a @71.0 2 OOo oer + Di i = (Coote Com + Vos = -10V 2 8 oLlo=-1.0mA = 40 > -50 0 50 100 150 -0.01 -0.1 -1.0 -10 Ten - Channel Temperature - °C lo - Drain Current - A.

Quality control of NEC semiconductors devices. - Quality control guide of semiconductors devices. | _Mev1202 | Assembly manual of semiconductors devices. 1E1-1207 Safe operating area of Power MOS FET TEA-1034 Application circuit using Power MOS FET TEB-1035 No part of this document may be copied or reproduced in any form or by any means without the prior written ~ consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact _ our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic contro! systems, Antidisaster systems, Anticrime systems, etc. M4 92.6