UPA1526

UPA1526 NEC | Alldatasheet

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; . . | = c COMPOUND FIELD EFFECT POWER TRANSISTOR N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE

DESCRIPTION

. GE DIMENSIONS The PA1526 is N-channel Power MOS FET Array that built in 4 PACKAC millimeters) circuits designed for solenoid, motor and lamp driver. 26.8 MAX. 4.0 - | Tr FEATURES o © 4V driving is possible ~ ~ © Large Current and Low On-state Resistance z ID(putse) = £8 A a 2 Rosion) $ 0.30 Q TYP. (Vas = 10 V) ~ Roston) $ 0.35 Q TYP. (Ves = 4 V) aL 2.54 oe on © 2.54 mm Pitch (0.1 inch) 14 0620.1 “= ORDERING INFORMATION 12345678910 Part Number Package Quality Grade _ uPA1526H 10-Pin SIP Standard ELECTRODE CONNECTION 2,4,6,8 GATE Please refer to “Quality grade on NEC Semiconductor Devices” Soe OO NCE (Document number IEI-1209) published by NEC Corporation to . know the specification of quality grade on the devices and its PIN CONNECTION recommended applications. 3 5 7 8 ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) _ Drain to Source Voltage Voss 1000 OV 2 6 g st] Gate to Source Voltage Vessiac) +20 Vv 1 T 10 Drain Current (DC) Ip(oc) 2.0 Ajunit Drain Current (pulse) lo(pulse)* = +8.0 A/unit Total Power Dissipation (4 circuits) <Te = 25 °C> Pri 2802 OW Drain (0) Total Power Dissipation (4 circuits) 24,68 : Gate (G) <To = 25 °C> Pre 35 WwW 3,5,7,9 ; Drain (D) Channel Temperature Teh 150 °C oe t 1,10; Source (S) Storage Temperature Tstg -55 to +150 °C * PWS 10 ms, Duty Cycle £ 10 % Source (S) pr Document No. IC-3332 Date Published December 1993 M Printed in Japan - © NEC Corporation 1993

ELECTRICAL CHARACTERISTICS (Ta = 25 °C) [taints arene me fm ee veo | [ate Sue stage Gove | ee [|] S00 [oa ventana [at see cnet votge | vewm_| vo [ | 38 |v ves vimet ma [rons Taner Aart | ei | ta] | [8 [veeviesta [dri ie ue Onsen tein | ten |_| oa | 0 | @[vactowmnsa | [orn Sue Ons Renee | Aone || om8 | 08 | a [verwavibnaen | f= 1.0 MH: [reverses [em || [|e] — Ves = 10 V See Fig. 1 - Lratime we Pe Fig. 1 Switching Test Circuit Dut Re Ves 90 % - cael * Ear Rin Weerom| 910%. o Pp 90 % f lo ; o—|_ Yeeron| Osea fy tal | te "| ["] £ 3 3 t=1ys — Duty Cycle S 1%

TYPICAL CHARACTERISTICS (Ta = 25 °C) ~ TOTAL POWER DISSIPATION vs. TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE CASE TEMPERATURE 4 30 a

3 LETT TT TTT = FEN CCCererree

IN ETT cuits operon 2 ONC ror oneaton BOLT NAL [Zcicuits operation 2 2 Fe 3 Circuits operation 8 SOROS, 2.ci S 3 INEZ Circuit ti a, LLAANY + Greutoperaton: é EEE PSS i Creu oporation e LER RATT 2 FRR HH é BERS SNNG 6 SoA a eee eNNNGEE 2 COCKS * LETTERS PO PERRIER ES é NNO é COOOCReSSsSS LIT TT TT TT TS aN 0 25 50 75 100 125 150 [) 25 50 75 100 125 150 Te - Ambient Temperature - °C Tc - Case Temperature - °C DERATING CURVE OF SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 10 oe 3 100 Nene « fire Fe = 0 a LETT se Ea \\ § LLL & 20 | s LT TTT N | aot e=aere Ht tL Hl 0 50 100 150 1 10 100 Te - Case Temperature - °C Vos - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO FORWARD TRANSFER ADMITTANCE vs. SOURCE VOLTAGE DRAIN CURRENT

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~ TAT TT a a Vi | ttt i yy = ot _L TT TTT 0 1 2 3 4 5 6 7 8 0.1 03 05 1 3 5 10 Vos — Drain to Source Voltage - V lo - Drain Current - A

SOURCE TO DRAIN DIODE CAPACITANCE vs. DRAIN TO. FORWARD VOLTAGE SOURCE VOLTAGE 10 pee 1 000 SEE 5 = 0 ee oe oe SS Ail _

2 ORREERRES SEA Sal << cisimmmmnneian AALITT

é Fa as § LLTTIT Titty yt 100 Se g PEELE AL 2 Se eel === === SSS ¢ sh 5 voK LMI Tal & é a | | | ove=e | | Tf TT TTT ceric rnc 0 0.2 0.4 06 08 1.0 1.2 1 10 100 1000 Vso - Source to Drain Voltage - V Vos — Drain to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE DRAIN TO SOURCE ON-STATE RESISTANCE g vs. GATE TO SOURCE VOLTAGE S vs. DRAIN CURRENT PTT TLL [=| ce - § Pulsed Hi 3 s Con com ef tTiti titi i 2 Co oo Bg 10 rE LeeLee s {| LEU Tt Z oe a Pie TOO | Ee B 05 WEEE 3 — es es a e | SN 2 [tii ein < | T c S CPPPPETE) él : 5 0 5 10 15 20 3 “On 03 05 1 3 5 10 = Vos — Gate to Source Voltage - V = lo ~ Drain Current - A GATE TO SOURCE CUTOFF VOLTAGE ‘TRANSFER CHARACTERISTICS. vs. CHANNEL TEMPERATURE ‘SSS y FPP <« it 7 es. i} [tT ty ~ Peer EEE 5 o g GS eee ———— g 2 a | 2 > oor _[ Pty tt | g 0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 160 Ves - Gate to Source Voltage - V Ten - Channel Temperature - °C

DRAIN TO SOURCE ON-STATE RESISTANCE @ vs. CHANNEL TEMPERATURE Pa-LL TT ee ~ Bp lo= 1mA ett TTT TTT eit || tt tty 2 08 $ LL TT tty sy | | | Lt rt | By, — | ster > LETT TTT fT L 8 0 20 40 60 60 100 120 140 160 é Ten~ Channel Temperature - °C

Application note name [ne Quality control of NEC semiconductors devices. TEI-1202 7 Quality contro! guide of semiconductors devices. MEI-1202 ‘Assembly manual of semiconductors devices. Safe operating area of Power MOS FET TEA-1034 Application circuit using Power MOS FET TEB-1035 No part of this document may be copied or reproduced in any form or by any means without the prior written — consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact _ our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6