UPA1524

UPA1524 NEC | Alldatasheet

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: : . | = cy COMPOUND FIELD EFFECT POWER TRANSISTOR N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS The uPA1524 is N-channel Power MOS FET Array that builtin 4 {in millimeters) circuits designed for solenoid, motor and lamp driver. 26.8 MAX. {9 FEATURES ° ®@ 4V driving is possible ~ _ e Large Current and Low On-state Resistance z lo(pulse) = +6 A a 2 Roston) $ 0.6 Q TYP. (Ves = 10 V) ~ Roston) $ 0.8 Q TYP. (Ves = 4 V) wb Lhe been © 2.54 mm Pitch (0.1 inch) 14 06201 * ORDERING INFORMATION 12345678910 Part Number Package Quality Grade _ HPA1524H 10-Pin SIP Standard ELECTRODE CONNECTION 2,4,6,8 GATE Please refer to “Quality grade on NEC Semiconductor Devices” SOO ANCE (Document number IEI-1209) published by NEC Corporation to . know the specification of quality grade on the devices and its PIN CONNECTION recommended applications. 3 5 z 8 ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) 7 2 4 6 8 Drain to Source Voltage Voss 80 Vv fo Gate to Source Voltage Vessiac) +20 Vv 1 10 Drain Current (DC) Inwe) £2.0 A/unit Drain Current (pulse) lo(putsey* 46.0 = A/unit Total Power Dissipation (4 circuits) <Tc = 25 °C> Pr 2 0 OW Drain (0) Total Power Dissipation (4 circuits) 2,4,6,8 : Gate(G) <Ta = 25 °C> Pra 3.5 Ww 3,5,7,9 ; Drain (D) 2 1,10 ; Source (S) Channel Temperature Teh 150 Cc Gate (6) _ Storage Temperature Tstg -55to+150 °C * PWS 300 ps, Duty Cycle $ 10 % Source (S) Document No. IC-3331 Date Published December 1993 M Printed in Japan © NEC Corporation 1993

ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC sympo. | min. [| Typ. | Max. | UNIT TEST CONDITIONS ) Gate to Source Leakage Current [ss | | ‘| +100 | ma | Vos = +20 V, Vos = 0 Gate to Source Cutoff Voltage [vesem | 10 | | 25 | v__| vos=10V,l0-1maA f= 1.0 MHz | Riotime ver 280 Rise Time eof Ts ee sow Turn-Off Delay Time [woo [so | ns | e500 Ra = 100 See Fig. 1 Fig. 1 Switching Test Circuit Dut Re Ves 90 % Ms heed Rin were) 10%. Ser PG.) Ro= 109 I* 90% 30% lo Va 0 com} 0 10% 10% 0 town] | [te tocol | ft [| [| t a! 7 t= 1ys Duty Cycle S 1%

TYPICAL CHARACTERISTICS (Ta = 25 °C) ~ TOTAL POWER DISSIPATION vs. TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE CASE TEMPERATURE 4 30 Pret TTT TTT TT

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FORWARD VOLTAGE SOURCE VOLTAGE YN '° 0S == pused | 1000 SSS er ml = wg 800 tt = 1.0 Mig 2 PERRET . See ae ® LETT Le § roo eT 8 ot ZZ ce ee i |

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fi) 0.2 04 . F A . A x Vso - Source to Drain Voltage - V Vos - Drain to Source Voltage - V G WRGATETO SOURCE VOLIAGE VRCHANNEL TEMPERATURE, NE 2.0 14 PCO) )=—s “TT pele REE ey = " © 10 4 eVHoeEE | eer TT 8 og LAL TT 8 ok <> 4 eC SSS sutra | | tt 4 : g 04 fot ttt ttt tl se TTT TT TTT | S02 a a lo=1.0A oases | | | [TT | i 0 Ltt ttre i ri) 5 OD fo) 50 100 150 = Ves — Gate to Source Voltage - V « Ten - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE ¢ vs. DRAIN CURRENT TRANSFER CHARACTERISTICS 8° TT | SSS OSs ttl Meeeiesese= === c <0 10 R= eS ' | SS SS = of | CTT ===> ===

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GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE SWITCHING TIME vs. DRAIN CURRENT > 40 O00 rr COCO ES) === ~ 2 f _— a SCEPC] woke ETT 3 = a es a esl a v > a | potty So SeeTestcieuit] {T]] | | TT TTT > -50 [) 50 100 150 0.1 05 1.0 5.0 10 Ten - Channel Temperature - °C lo — Drain Current - A

Application nate name [wed Quality contro! of NEC semiconductors devices. ‘TEI-1202 Quality control guide of semiconductors devices. | _meriz02 | Assembly manual of semiconductors devices. 11-1207 Safe operating area of Power MOS FET TEA-1034 Application circuit using Power MOS FET TEB-1035 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use “Standard” quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. ~ Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6