UPA1522 NEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98.
t = cy COMPOUND FIELD EFFECT POWER TRANSISTOR N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE
DESCRIPTION
The PA1522 is N-channel Power MOS FET Array that built in 4 PACKAGE DIMENSIONS circuits designed for solenoid, motor and lamp driver. 26.8 MAX 40 es Oe be FEATURES ° © 4V driving is possible ~ © Large Current and Low On-state Resistance Zz loipulse) = +8 A a = Roston) $ 0.17 Q TYP. (Ves = 10 V) - Roston) $ 0.29 Q TYP. (Ves = 4 V) eh aL 2.54 u“ on © 2.54 mm Pitch (0.1 inch) 14 0620.1 * ORDERING INFORMATION 12345678910 Part Number Package Quality Grade - uPA1522H 10-Pin SIP Standard ELECTRODE CONNECTION 2,4,6,8 GATE Please refer to “Quality grade on NEC Semiconductor Devices” * Sr 9 SB ORCE (Document number IEI-1209) published by NEC Corporation to . know the specification of quality grade on the devices and its PIN CONNECTION recommended applications. 3 5 7 5] ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) 9 Drain to Source Voltage Voss 60 Vv 2 4 & 8 F] Gate to Source Voltage Vessiac) +20 Vv Drain Current (DC) loo) $2.0 A/unit : $ Drain Current (pulse) ID(pulsey* +8.0 A/unit Total Power Dissipation (4 circuits) <Tc = 25 °C> Pri 2020 Drain (D) Total Power Dissipation (4 circuits) ° 2,4,6,8 ; Gate (G) <Ta = 25 °C> Pre 3.5 w 3.5.7.9 : Drain (D) Channel Temperature Teh 150 °C Gee) 1,10; Source (S) Storage Temperature Tstg -55 to +150 °C * PW § 10 ms, Duty Cycle $1 % Source (S) Document No. IC-3329 Date Published December 1993 M Printed in Japan © NECComoration 1993
ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC symBot | min. | Typ. | MAX. | UNIT TEST CONDITIONS ) Gate to Source Leakage Current [uss | | ‘| #100 | na _| Vos = +20 V, Vos = 0 Gate to Source Cutoff Voltage [ vesom | 10 | | 25 | V__ | Vos=10V,lo=1mA Forward Transfer Admittance [ivei | 10 | | | s_|vos=t0v,=1A Drain to Source On-state Resistance | Rosion | «| _0.17_ | 0.25 | 9 | Vos=10V,lo=1A f= 1.0 MHz
7 Vos = 10 V
| pietine eT Tso eo ee Fig. - Fig. 1 Switching Test Circuit our} ~ Re Ves 90 % Rin NAS sr 0% isSton PG.@) Ra= 109 |" i PO% lao y in lb som fl 1" ||\\10% yo [ Peto] 70% ual [*] "| t ie a pales Buty Cycle $ 1%
TYPICAL CHARACTERISTICS (Ta = 25 °C) TOTAL POWER DISSIPATION vs. TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE CASE TEMPERATURE 4 30 [LITE Po
3 HHH Lt 2 TTNETTTPTPyT ys
: .LLN A Cieuits operation § CENCE serene operation
3 NN 3 Circuits operation op A ENE TZ circuits operation
. 2 Circuits operation NI by ircuits operation & (LL AKAN Geer 6 CCP AR ER ereioonrton
2 LT ASSET 2 FES SAL
fo SRA é op SVAN PEEPS PEERS in "a a | PM. ‘ : EEEEHEHESSN = EEPRRSERSS im TSS 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ts — Ambient Temperature - °C. Tc - Case Temperature — °C DERATING CURVE OF SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA ‘ot | TT TT SG Sa Ss a ldousel Et 17. CEH § 100 eee TTT RR = 0 pst 2 e@ Pa LNT TT 3 OOTINeNI RET PSR gs 6 ss A a eS ~g 40 7 a es 8 | || NEI i ee et | 2 29 | TT » LETT TN I [Sraorvie| ([[/l] | TTIW ° 0.1 [Single Pulse 0 50 100 150 1 10 100 Tc - Case Temperature — °C Vos — Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO FORWARD TRANSFER ADMITTANCE vs. SOURCE VOLTAGE DRAIN CURRENT now Wp v ue ® Pulsed AH y [av Soot . Pegs B Aa : y ey a | eos H oo ey 8 [fi | | yt 3 Sette € [fe tt s PAC Ci oi lh ry SA Wi | it yy yt] i ee | a PO Vit | tt tt é SooL LUMI TTI TTT i’) 5 0.01 0.1 1 10 Vos — Drain to Source Voltage — V lo ~ Drain Current - A
SOURCE TO DRAIN DIODE CAPACITANCE vs. DRAIN TO. FORWARD VOLTAGE SOURCE VOLTAGE < s SS a Sa ~ ¢ a A 8 a 7) ee sooo eA TI TT a 8 SSeS 5 a N,N | Hi PAR os S it. Zi |_| 6 roo LUST
3 SS A | & TT TAT
oLt_l [ fA {fT vol UTM TE TT (0) 1.0 0.1 1 10 100 Vso - Source to Drain Voltage - V Vos — Drain to Source Voltage — V DRAIN TO SOURCE ON-STATE RESISTANCE ~ DRAIN TO SOURCE ON-STATE RESISTANCE S vs. GATE TO SOURCE VOLTAGE So vs. DRAIN CURRENT . 0.4 — en ee ee | sot IEEE Bol venew LETT i PAT Pt ttt : pa < é bof IT ET 5 op pr | et] et Se eam es ee e ETT TTT tt e | | TI TT & & > CETTE tT cog ee | Zz 0 10 12 g 0.1 1 10 = Ves - Gate to Source Voltage - V = lb - Drain Current - A GATE TO SOURCE CUTOFF VOLTAGE TYPICAL TRANSFER CHARACTERISTICS, vs. CHANNEL TEMPERATURE ‘SSS of EEE Ee ey ee ere 8 los 1mA oo a - i 27PFPTPLLEL 2 == SS @Prpppttitt 8 =e oy §, HEE] ft an SS —— oo | —— s | [tit] | [i a a | 9 a es LETT TT Tt | 0 5 0 20 40 60 80 100 120 140 160 Vos — Gate to Source Voltage - V Ten - Channel Temperature — °C.
DRAIN TO SOURCE ON-STATE RESISTANCE S vs. CHANNEL TEMPERATURE SWITCHING CHARACTERISTICS Feat LT TT ey ‘a i= 2 a ee —SS 03 "= A PSS SH e Li] | [Ute | : CASA 2 | é pe 4 joo ' sil =a ee eal 8 al 6 SS a ¢ a A 6 e LEP TT TT 2 So ooh § s LL TTT TTT a a PTT TUT i 0 20 40 60 80 100 120 140 160 0.1 1 10 © Ten - Channel Temperature - °C lo - Drain Current ~ A.
Application note name [Ne] Quality control of NEC semiconductors devices. Quality control guide of semiconductors devices. MEI-1202 ‘Assembly manual of semiconductors devices. Safe operating area of Power MOS FET TEA-1034 Application circuit using Power MOS FET TEB-1035, No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 eee