UPA1520BH

UPA1520B NEC | Alldatasheet

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Technical content

© 1995 DATA SHEET Compound Field Effect Power Transistor

DESCRIPTION

The µPA1520B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver.

FEATURES

• 4 V driving is possible
• Large Current and Low On-state Resistance ID (DC) = ±2.0 A R DS (on) 1 ≤ 0.17 Ω MAX. (VGS = 10 V, ID = 1 A) R DS (on) 1 ≤ 0.25 Ω MAX. (VGS = 4 V, ID = 1 A)
• Low Input Capacitance Ciss = 220 pF TYP.

ORDERING INFORMATION

µPA1520BH 10 Pin SIP ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage VDSS Note 1 30 V Gate to Source Voltage VGSS Note 2 ±20 V Drain Current (DC) ID (DC) ±2.0 A/unit Drain Current (pulse) ID(pulse)Note 3 ±8.0 A/unit Total Power Dissipation PT1Note 4 28 W Total Power Dissipation PT2Note 5 3.5 W Channel Temperature T CH 150 °C Storage Temperature T stg –55 to +150 °C Notes 1. VGS = 0 2. VDS = 0 3. PW ≤ 10 µs, Duty Cycle ≤ 1 % 4. 4 circuits, TC = 25 °C 3. 4 circuits, TA = 25 °C The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. µPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE Document No. G10598EJ2V0DS00 (2nd edition) Date Published December 1995 P Printed in Japan PACKAGE DIMENSIONS in millimeters CONNECTION DIAGRAM 26.8 MAX. 2.5 1.4 0.6±0.1 2.54 4.0 10 MIN. 1.4 0.5±0.1 1 1023456789 ELECTRODE CONNECTION 2, 4, 6, 8 3, 5, 7, 9 1, 10 : Gate : Drain : Source

µPA1520B ELECTRICAL CHARACTERISTICS (T A = 25 °C) CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Leakage Current I DSS VDS = 30 V, VGS = 0 10 µA Gate Leakage Current I GSS VGS = ±20 V, VDS = 0 ±10 µA Gate Cutoff Voltage V GS(off) VDS = 10 V, ID = 1.0 mA 1.0 2.0 V Forward Transfer Admittance | Y fs |V DS = 10 V, ID = 1.0 A 1.0 S Drain to Source On-State ResistanceR DS(on)1 VGS = 10 V, ID = 1.0 A 0.10 0.17 Ω R DS(on)2 VGS = 4.0 V, ID = 1.0 A 0.13 0.25 Ω Input Capacitance C iss VDS = 10 V, VGS = 0, f = 1.0 MHz 220 pF Output Capacitance C oss 220 pF Reverse Transfer Capacitance C rss 90 pF Turn-on Delay Time t d(on) ID = 1.0 A, VGS = 10 V, VDD = 15 V, 27 ns Rise Time t r R L = 15 Ω 125 ns Turn-off Delay Time t d(off) 590 ns Fall Time t r 500 ns Total Gate Charge Q G VGS = 10 V, ID = 2.0 A, VDD = 24 V 14 nC Gate to Source Charge Q GS 2n C Gate to Drain Charge Q GD 5.5 nC Body Diode Forward Voltage V F(S-D) IF = 2.0 A, VGS = 0 1.0 V Reverse Recovery Time t rr IF = 2.0 A, VGS = 0, di/dt = 50 A/µs 640 ns Reverse Recovery Charge Q rr 3.4 µC Test Circuit 1 Switching Time Test Circuit 2 Gate Charge PG. D.U.T. R L VDD R G VGS t = 1 s Duty Cycle ≤ 1 % VGS Wave Form ID Wave Form VGS ID 10 % 10 % 90 % 90 % 90 % 10 % VGS (on) ID ton toff td (on) tr td (off) tf t R G = 10 Ω µ PG. IG = 2 mA 50 Ω D.U.T. R L VDD

µPA1520B CHARACTERISTICS (T A = 25 °C) FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V ID - Drain Current - A 0.1 0.1 1 10 100 TC = 25 °C Single Pulse RDS(on) Limited (V GS = 10 V) ID(Pulse) ID(DC) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE V DS - Drain to Source Voltage - V ID - Drain Current - A 0 1.0 1.5 2.0 0.5 Pulsed PW = 1 ms 10 ms50 ms 100 ms FORWARD TRANSFER CHARACTERISTICS VGS- Gate to Source Voltage - V ID - Drain Current - A 0.1 1.0

100 Pulsed

VDS = 10 V 02 4 6 TA = 125 °C 75 °C 25 °C -25 °C TC - Case Temperature - °C PT - Total Power Dissipation - W 0 50 100 150 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

4 Circuits operation

2 Circuits operation

3 Circuits operation

1 Circuit operation

TA - Ambient Temperature - °C PT - Total Power Dissipation - W 0 50 100 150 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TC - Case Temperature - °C dT - Percentage of Rated Power - % 0 20 40 60 80 100 120 140 160 100 VGS = 20 V 10 V VGS = 4 V DC Under same dissipation in each circuit Under same dissipation in each circuit 100 Laed Print Circuit Boad /,/,/,/,/, NEC PA1520BH TC is grease Temperature on back surface µ

µPA1520B TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - sec rth(t) - Transient Thermal Resistance - °C/W FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V 0 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE TCH - Channel Temperature - °C VGS(off) - Gate to Source Cutoff Voltage - V ID - Drain Current - A R DS(on) - Drain to Source On-State Resistance - mΩ 100 1.0 100 0.1 1.0 1 000 1 m 10 m 100 m 1 10 100 1 000 VDS = 10 V Pulsed 0.1 1.0 1.0 100 100 200 Pulsed VDS = 10 V ID = 1 mA - 50 0 50 100 150 0.1 200

300 Pulsed

VGS = 4 V VGS = 10 V TA = -25 °C 25 °C 75 °C 125 °C R th(CH-C) yfs - Forward Transfer Admittance - S R DS(on) - Drain to Source On-State Resistance - mΩ 100 R th(CH-A) 4Circuits 3Circuits 2Circuits 1Circuit ID = 0.4 A 1 A 2 A Single Pulse. For each Circuit µ

µPA1520B DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE TCH - Channel Temperature - °C R DS(on) - Drain to Source On-State Resistance - mΩ SOURCE TO DRAIN DIODE FORWARD VOLTAGE VSD - Source to Drain Voltage - V ISD - Diode Forward Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 0.01 - 50 0 50 100 150 ID = 1 A 0.010 0.1 1.0 0.5 Pulsed 0.1 100 1 000 1 10 100 VGS = 0 f = 1 MHz 100 1 000 0.1 1.0 10 VGS - Gate to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT ID - Drain Current - A trr - Reverse Recovery time - ns di/dt = 50 A/ s VGS = 0 100 0.01 1000 10 000 0.1 1.0 10 1.0 1.5 VDD 15 V VGS = 10 V R G =10 Ω DYNAMIC INPUT/OUTPUT CHARACTERISTICS Q g - Gate Charge - nC VDS - Drain to Source Voltage - V 2 6 10 14 100 150 200 VGS = 4 V VGS =10 V C oss C iss C rss VGS VDS VDD = 6 V 24 V 15 V td(off) tr td(on) VGS = 10 V VGS = 0 ID = 2 A tf µ

µPA1520B REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual IEI-1207 Semiconductor device package manual IEI-1213 Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide MF-1134 Power MOS FET features and application switching power supply TEA-1034 Application circuits using Power MOS FET TEA-1035 Safe operating area of Power MOS FET TEA-1037

µPA1520B [MEMO]

µPA1520B [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11