UPA1501

UPA1501 NEC | Alldatasheet

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COMPOUND FIELD EFFECT POWER TRANSISTOR (NEC uPA1501 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE

DESCRIPTION

The j!PA1501 is N-channel Power MOS FET Array that built in 4 PACKAGE DIMENSIONS circuits and surge absorber designed for solenoid, motor and 31.5 MAX 4.2 MAX lamp driver. re ina FEATURES e\\= © 4V driving is possible 12345678 910112;%S © Low On-state Resistance | | | | | | g Ros(on) $ 0.42 Q MAX. (Ves = 10 V, Ip = 2 A) ° Rosion) $0.49 2 MAX. (Ves = 4 V, Io = 2 A) = ORDERING INFORMATION ELECTRODE CONNECTION Part Number Package Quality Grade 1,5, 8, 12 GATE HPA1501H 12-Pin SIP Standard een Coun e NOPE 3,10 CATHODE Please refer to “Quality grade on NEC Semiconductor Devices” (Document number IEI-1209) published by NEC Corporation to PIN CONNECTION know the specification of quality grade on the devices and its 2 3 } recommended applications. Ds De | ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) J Drain to Source Voltage Voss 120 «OV Ro |, AO Ro Ko Gate to Source Voltage Vessiac) +20,-10 V 1 a 5 Drain Current (DC) lowoc) #3.0 Alunit 7 Zo Drain Current (pulse) loipuise* = £12 A/unit 6 — Repetitive Peak Reverse Voltage VRRM 140 Vv 9 10 1 Diode Forward Current levy 3.0 Alunit > bo? Total Power Dissipation (4 circuits) Pr 4.0 Ww <Te = 25 °C> Channel Temperature Ten 150°C Re bs oti - Storage Temperature Tsg 85 to +150 °C 8 12 * PW £ 10 us, Duty Cycle $1 % “ Zo Zo 167 Di to Ds ; Body Diode Dsto Ds : Surge Absorber Zo: Gate to Source Protection ~ Ro Gate Input Resistance 450 2 TYP. pn Document No. IC-3327 {0.D. No. IC-7995) Pate panes oeember 1993 M © NEC Corporation 1993

ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC symeo. | min. | Typ. | MAX. | UNIT TEST CONDITIONS \\ Gate to Source Leakage Current [ ss | | | #10 | wa _| Vos 2%, Vos~0 Forward Transfer Admittance [iver [ 22 | | [| _s__| vos=10V, b= 2A Drain to Source On-state Resistance | Rosin | | _0.42 | 065 | 9 | Vos=10V,lo=2A [rine sous rate Roiaone | Row [| ea [eae [0 [varrevin-2a | f= 1.0 MHz — Vos = 10V SURGE ABSORBER (Diode, built in) 1 Unit Repetitive Peak Reverse Current ee ee dc Fig. 1 Switching Test Circuit our} Re Ves 90 % Ro Mere) 10% PG.@) Ra= 102 [* bb PO% Toy ~ A lo o—-—— Howton! OF Lhe teal | le [*] "| t ms al t= 1 ps Duty Cycle $ 1% Fig. 2 Gate Charge Test Circuit Dut Io=2mA Ru PG. © : 502 | I’

TYPICAL CHARACTERISTICS (Ta = 25 °C) a TOTAL POWER DISSIPATION vs. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE AMBIENT TEMPERATURE os 5 5 ew 4 Circuits operation 5s 4 rf 4 Circuits operation 3 2o-==h N 3 Circuits operation 3 3 Circuits operation

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FA &/ 2 Circuits operation g 3 DP H2Litcuits operation i} NJ Circuit operation a Ss 1 Circuit operation A mL KN PE TSS & 9 rN é& ? PN BET | AAA E SSX i et NN ey Sx «tT TESS “{ | TES ime N iN 0 50 100 150 0 50 100 150 Tc - Case Temperature - °C Ta - Ambient Temperature - °C DRAIN CURRENT vs. DRAIN TO FORWARD BIAS SAFE OPERATING AREA SOURCE VOLTAGE SSS SES 12 ae 10 SO < tse Coir « oer okt Ledteesl 9 MIM TTT tg ZA

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g "et ee eet | & 4 Y FE EN a 2 "4 or LSinate Pulse [TTT NUIT TT TTT 1 10 100 1000 i) 2 4 6 8 10 12 Vos — Drain to Source Voltage - V Vos - Drain to Source Voltage - V = TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH A Ft tt He (Circuits: = —— Sena 5 100 alt TT rus e Fett —t—tRneraf fH] a) ee SSS SS ay i SSS ay 2 i Sy) ae a & ee fl A 6 SO SL 8 | = COCO PU Tr . Im 10m 100 m 1 10 100 1000 PW - Pulse Width - s

DRAIN TO SOURCE VOLTAGE DRAIN TO SOURCE VOLTAGE vs. vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 1.0 Pulsed “TDL Le > EEE gos y-7 a) ee 5 ver A A] 7 g 06 p< 8 20 pe eee | eae © 04 — ‘2 [8.0 A MCPTT TT) APEEERES bo, eerNoCr tal PET TTT | ? GRRE SS te) 2 4 6 8 10 12 0 5 10 15 20 lo — Drain Current - A Vos - Gate to Source Voltage - V SOURCE TO DRAIN DIODE TRANSFER CHARACTERISTIC FORWARD VOLTAGE S| pases <« FREER EESESE i « wo LL] | | = 10a . ——— = a —— S FREES SS S55

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rr ee ee 2 o |A-eie = ———— 2 a ool 1 Tt Ti T TT tT Tt | onl tT TT rT yt rr tt | 0 1 2 3 4 5 0 2 4 6 8 10 12 Ves — Gate to Source Voltage - V Vso - Source to Drain Voltage - V FORWARD TRANSFER ADMITTANCE CAPACITANCE vs. DRAIN TO. vs. DRAIN CURRENT SOURCE VOLTAGE » 10 a1 10V 1000 p= ES s Ceo , ATS - = =-25 “( 3 § 10 Le 5 root Trice | | 2 PSR ey . SSS Sa pe | s COA co . AS on © aa § so USSU LU iJ ooo SS Se oo os Ss | g Se SS meses

2 Fees h Pn Seay 2 Eee a

a a 5} H¥eFSuef ETH CLT eg iLfea mee] TTI TTT 0.1 1 10 100 0.1 1 10 100 lo — Drain Current - A Vos ~ Drain to Source Voltage - V

GATE TO SOURCE CUTOFF VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE S vs. CHANNEL TEMPERATURE PLT Tee] TT TT Te ~ 2 lo=1mA 3 Va 3S 20 3 08 POPRAT TG eter $ g COUTTS Slee TT 2 to [~ 8 yal ee pati ttt} ayer tt S 08 © 02 rl s = PLETE T TTT) ¢ EE E de Teer > -25 0 25 50 75 100 125 150 5 rd to) 25 50 75 100 125 150 Ten - Channel Temperature - °C = Ten - Channel Temperature - °C. SWITCHING TIME vs. DRAIN CURRENT DYNAMIC INPUT CHARACTERISTIC. é = nea > = > © CoCo Tir 1 Ves = 10 V 1 1 eg | 8 on | | || Ven 96. | | ve A od ° 5 OvtoX” |" 8 o Pts 3 | A I 3 = rofl ee [TT 2 wore 3 ed ees | Eo WAA7 | |, 3

2 Sak Se § | 4a 46

SPEIRS esr “TATE TE 3 Z | 2 A 8 se ee VW TT, 0.1 1 10 100 0 4 8 12 16 Ip — Drain Current - A Qs - Gate Charge - nC

Application note name [wo Quality control of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. MEI-1202 Assembly manual of semiconductors devices. 1E1-1207 Safe operating area of Power MOS FET TEA-1034 Application circuit using Power MOS FET TEB-1035 No part of this document may be copied or reproduced in any form or by any means without the prior written - consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. ~ Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 ee