UPA1478 NEC | Alldatasheet

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Technical content

DESCRIPTION

The µPA1478 is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber and 4 circuits designed for driving solenoid, relay, lamp and so on.

FEATURES

  • Surge Absorber (Zener Diode) built in.
  • Easy mount by 0.1 inch of terminal interval.
  • High hFE for Darlington Transistor.

ORDERING INFORMATION

Part Number Package Quality Grade µPA1478H 10 Pin SIP Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C) Collector to Base Voltage V CBO 31 ±4V Collector to Emitter Voltage V CEO 31 ±4V Emitter to Base Voltage V EBO 7V Surge Sustaining Energy E CEO (SUS) 40 mJ/unit Collector Current (DC) I C(DC) ±2 A/unit Collector Current (pulse) I C(pulse)* ±4 A/unit Total Power Dissipation P T1 3.5 W Total Power Dissipation P T2* 28 W Junction Temperature T J 150 ˚C Storage Temperature T stg –55 to +150 ˚C * PW ≤ 300 µs, Duty Cycle ≤ 10 % 4 Circuits, T a = 25 ˚C * 4 Circuits, T c = 25 ˚C µPA1478 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE PACKAGE DIMENSION (in millimeters) 1 2 3 4 5 6 7 8 910 26.8 MAX. 1.4 0.6 ±0.1 2.54 2.5 4.0 10 MIN. 1.4 0.5 ±0.1 CONNECTION DIAGRAM 468 579 (C) (E) (B) R1 R2 PIN No. 2, 4, 6, 8 3, 5, 7, 9 1, 10 : Base (B) : Collector (C) : Emitter (E) R 1 = 10 kΩ R2 = 500 Ω . . . . The information in this document is subject to change without notice. © 1994 DATA SHEET Document No. IC-3566 (O.D. No. IC-6634) Date Published November 1994 P Printed in Japan

µPA1478 ELECTRICAL CHARACTERISTICS (T A = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Leakage Current ICBO 10 µA VCB = 20 V, I E = 0 Emitter Leakage Current IEBO 1 mA VEB = 5 V, I C = 0 Collector to Emitter V CEO(SUS) 27 31 35 V I C = 1 A, Sustaining Voltage L = 3 mH DC Current Gain hFE1 * 1000 — VCE = 2 V, I C = 0.5 A DC Current Gain hFE2 * 2000 30000 — VCE = 2 V, I C = 1 A Collector Saturation Voltage VCE(sat) * 1.5 V IC = 1 A, I B = 1 mA Base Saturation Voltage VBE(sat) * 2 V IC = 1 A, I B = 1 mA Turn On Time ton 0.5 µs Storage Time tstg 3 µs Fall Time t f 1 µs * PW ≤ 350 µs, Duty Cycle ≤ 2 % / pulsed SWITCHING TIME TEST CIRCUIT IB2 VIN PW PW = 50 s Duty Cycle ≤ 2 % µ. . VBB = –5 V. . IB1 IC T.U.T. RL = 20 Ω VCC = 20 V. . . . Base Current Wave Form Collector Current Wave Form I IB2 IC 10 % 90 % ton tstg tf . . IC = 1 A IB1 = –IB2 = 1 mA VCC = 20 V, R L = 20 Ω See test circuit . . The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

µPA1478 TYPICAL CHARACTERISTICS (T A = 25 ˚C) DERATING CURVE OF SAFE OPERATING AREA dT - Percentage of Rated Current - % 100 TC - Case Temperature - ˚C TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W Ta - Ambient Temperature - ˚C TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W TC - Case Temperature - ˚C 50 100 150 S/b Limited Dissipation Limited NEC PA1478µ 25 50 75 100 125 150

4 Circuits Operation

3 Circuits Operation

2 Circuits Operation

1 Circuit Operation

IC - Collector Current - A VCE - Collector to Emitter Voltage - V 0.5 0.1 0.05 0.01 5 10 50 100 Single Pulse Dissipation Limited S/b Limited 50 ms 1 ms µ 100 s VCEO TYP. 0.02 0.2 µ 300 s DC CURRENT GAIN vs. COLLECTOR CURRENT hFE - DC Current Gain 0.01 50000 IC - Collector Current - A BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE (sat) - Collector Saturation Voltage - V VBE (sat) - Base Saturation Voltage - V IC - Collector Current - A 10000 1000 100 0.1 2.0 10 VCE = 2.0 V Pulsed IC/IB = 1000 Pulsed 2.0 0.5 0.1 0.5 2.0 10 VBE (sat) VCE (sat) 20000 5000 200 500 2000 5.0 1.0 0.2 0.2 1.0 5.0

µPA1478 TRANSIENT THERMAL RESISTANCE Rth (j-c) - Transient Thermal Resistance - ˚C/W 0.1 100 PW - Pulse Width - ms VCE ≤ 10 V 0.1 1 10 100 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IC - Collector Current - A 2.0 VCE - Collector to Emitter Voltage - V 1.6 1.2 0.8 0.4 100 µIR = 80 A 120 140 160180200220

µPA1478 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134

µPA1478 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 [MEMO]