UPA1454 NEC | Alldatasheet

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Technical content

DESCRIPTION

The µPA1454 is NPN silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.

FEATURES

  • Easy mount by 0.1 inch of terminal interval.
  • High hFE. Low V CE(sat). hFE = 800 to 3200 (at I C = 1 A) VCE(sat) = 1.0 V MAX. (at I C = 3 A)

ORDERING INFORMATION

Part Number Package Quality Grade µPA1454H 10 Pin SIP Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (T a = 25 ˚C) Collector to Base Voltage V CBO 100 V Collector to Emitter Voltage V CEO 100 V Emitter to Base Voltage V EBO 7V Collector Current (DC) I C(DC) 5 A/unit Collector Current (pulse) I C(pulse)* 10 A/unit Base Current (DC) I B(DC) 1.0 A/unit Total Power Dissipation P T1 3.5 W Total Power Dissipation P T2* 28 W Junction Temperature T j 150 ˚C Storage Temperature T stg –55 to +150 ˚C * PW ≤ 300 µs, Duty Cycle ≤ 10 % 4 Circuits, T a = 25 ˚C * 4 Circuits, T c = 25 ˚C Document No. IC-3520 Date Published September 1994 P Printed in Japan µPA1454 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE PACKAGE DIMENSION (in millimeters) 1 2 3 4 5 6 7 8 910 26.8 MAX. 1.4 0.6 ±0.1 2.54 2.5 4.0 10 MIN. 1.4 0.5 ±0.1 CONNECTION DIAGRAM PIN No. 2, 4, 6, 8 3, 5, 7, 9 1, 10 : Base (B) : Collector (C) : Emitter (E) 11 0 The information in this document is subject to change without notice. © 1994 DATA SHEET

µPA1454 . . IC = 3 A IB1 = –IB2 = 30 mA VCC = 50 V, R L = 16.7 Ω See test circuit . . ELECTRICAL CHARACTERISTICS (T a = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Leakage Current ICBO 10 µA VCB = 100 V, I E = 0 Emitter Leakage Current IEBO 10 µA VEB = 7 V, I C = 0 DC Current Gain hFE1 * 800 1300 3200 — VCE = 5 V, I C = 1 A DC Current Gain hFE2 * 500 1000 — VCE = 5 V, I C = 3 A Collector Saturation Voltage VCE(sat) * 1.0 V IC = 3 A, I B = 30 mA Base Saturation Voltage VBE(sat) * 1.2 V IC = 3 A, I B = 30 mA Turn On Time ton 1 µs Storage Time tstg 3 µs Fall Time t f 1.5 µs * PW ≤ 350 µs, Duty Cycle ≤ 2 % / pulsed SWITCHING TIME TEST CIRCUIT T.U.T. VCC = 50 V RL = 16.7 Ω IC 1B1 1B2 VIN PW PW = 50 s Duty Cycle ≤ 2 % µ.. VBB = –5 V.. Base Current Wave Form Collector Current Wave Form I IB2 IC tftstgton 90 % 10 %

µPA1454 TYPICAL CHARACTERISTICS (T a = 25 ˚C) DERATING CURVE OF SAFE OPERATING AREA dT - Percentage of Rated Current - % 100 TC - Case Temperature - ˚C 50 100 150 S/b Limited Dissipation Limited SAFE OPERATING AREA IC - Collector Current - A 100 VCE - Collector to Emitter Voltage - V 0.1 5 100 300 s µ1 ms 10 ms 50 ms IC(pulse) MAX. TC = 25 ˚C Single Pulse 10 50 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W Ta - Ambient Temperature - ˚C NEC PA1454µ 25 50 75 100 125 150

4 Circuits Operation

3 Circuits Operation

2 Circuits Operation

1 Circuit Operation

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W TC - Case Temperature - ˚C 25 50 75 100 125 150 DC CURRENT GAIN vs. COLLECTOR CURRENT hFE - DC Current Gain 0.001 10000 IC - Collector Current -A 1000 100 0.01 0.1 1 10 VCE = 5 V Pulsed VCE(sat) - Collector Saturation Voltage - V VBE(sat) - Base Saturation Voltage - V BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 0.01 IC - Collector Current - A 0.1 1 10 0.1 0.02 VBE(sat) IC = 200·IB IC = 1000·I B IC = 500·I B IC = 200·I B IC = 100·I B VCE(sat) 0.5 VCEO MAX. PW =100 s IC(DC) MAX. µ

µPA1454 Rth (j-c) - Transient Thermal Resistance - ˚C/W COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IC - Collector Current - A VCE - Collector to Emitter Voltage - V IB = 0.5 mA 1.5 12345 TRANSIENT THERMAL RESISTANCE 0.1 100 PW - Pulse Width - ms 1 10 100 VCE ≤ 10 V

µPA1454 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134

µPA1454 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 [MEMO]