UPA1438H NEC | Alldatasheet

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NE € ELECTRONICS INC 48 DE e4e7ses oowsu?7 2 F 7-43-25 i Se oe ee ENG _ POWER TRANSISTOR ARRAY NPN. SILICON EPITAXIAL : POWER TRANSISTOR ARRAY LOW.SPEED SWITCHING (DARLINGTON) a a a ae een | DESCRIPTION. y . The wPAI438H is an array of four darlington power transistors. It Is especially designed for applications demand for high peak current ° . capability. It Is suitable for driving actuaters such as solenoids, motors,relays and lamps. : : : J PACKAGE DIMENSIONSCUni t:mm) FEATURES 7 . AND INTERNAL CONNECTIONS ‘High AFECDarl ington) : “ 26. MAX Ao. ‘High peak current capability *Easy to mount on plastic substrates - ‘2 ' Able to use with high-density mounting. - ~ = 5 z «Built-in Zenér Diode = * : “ 2 between Collector and Base i> ABSOLUTE MAXIMUM RATINGS(Ta=25°C) . “oa Hees tH Ti isso Collector to Base Voltage VCBO 601 0V oe Collector to Emitter Voltage VCEO 6010Y Ss . Emitter to Base Voltage VEBO 7.0 SPEEETETEN} . . Collector Current(DC) ° 1CCDC) -=3.0A/unit : mae oS "Collector Current(pulse) —1C(pulse)4#8.0A/unit re ce Base Current(DC) 1B(DC) «0. 3A/unit an fe oon . Total Power Dissipation PTH 3.5W 2 t..] J sr . Total Power Dissipation PTS 28y ; 1 A . 1 _ Junction Temperature Tj 150 T- ° Storage Temperature Tstg -55 to +150 . # PUS300 ws,Duty Cycles 10% EQUIVALENT CIRCUIT! Unit) * #% When all units are used,Ta=25 °C . . #43 When all units are used, Tc#25 ‘C oC : . - The 24 iiBue (8) : B -247,9; Collector (C) USK 4, 10; Emitter (E) Ri? ko . Rissco a . OE NEC cannot assume any responsitility for any circuits shewn or reoresent that ” © ieee NEECorperaticn they are free from patent infringement : / Ic-1911

NE C ELECTRONICS INC 48 pel bY¥¢rse5 GOLL4S y 7 "YS -2S ELECTRICAL CHARACTERISTICS(Ta=25°C) , “ITEM SYMBOL HIN. TYP. MAX. UNIT TEST CONDITIONS “| Collector to Emitter YCEOCSUS) 50 60 70 VY IC#1.5A, 1B=1.5mA Sustaining Voltage Leint Collector Cutoff Current ICBO 10 uA VCB=40Y, 1E=0 Emitter Cutoff Current {£80 . 1 BA VEB=5.0V,1C=0 OC Current Gain HFELS 1000 > VCE=2.0V,1C=0.5A OC Current Gain - hPE2= 2000 20000 «+ = VCE=2.0V,1C=1.5A : Collector to Emitter VCE(sat)# 0.9 1.2 VY 1C=1.5A,18=1.5mA Saturation Vol tage- _ Saturation Voltage . . Turn-On Time ton . 1.0 us Irecaepet SmA Storage Tine tstg 3.0 us mana . Fall Tine tt - 1.0 us RLFQT @ VCCaaOV : See Test Circuit. #Pulsed/PWS 350 us, Duty Cycles 2% SWITCHING TIME (ton, tutg, tt) TEST CIRCUIT ; . . RL vin a Itc | te i , ~ ie TUT. ii td | 90 % ec : PWa50 ys Vese-5 V “tg 10%: . Duty Cycles 2 2% . i a i 2 .

N E£ C ELECTRONICS INC 98 DE—}b427525 0019149 & — 1-93-25 + tienes mn nanan ace eat act SL RO are SE TS a SS ES TYPICAL CHARACTERISTICS (T, = 25°C) . eusequaseaare an , oo, "REED peor 0, — = Each unit dissipates sane (TJ | fre ts the tesperature of, Fe e ithe grease applied to the = tin |r ws = HER ck unit dtastpater eave & ah feck fam —— Sstrate ; £ at LN “units je 8 (CONC Z eats POOR N/a is i ETS ESNIAZ/ 2 watts PrN 7 ett ¢ .COSARR 7a i nt TESTER A ET TT

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SS «| TT ST é | | { i j eat TTT TT ta LO t 1 | {1 L| a A A | 3 20) ete | CCE ENG voile Poel TTT TTT TTT S| r . fs. a) $0 100 150 . Voe~Cetector $0 Emitter Voltage=V TeCase Temperature" . conLEcTOR cant ” . TRANSIENT THERMAL RESISTANCE COLLECTOR TO EWTTER VOLTAGE OE ——— = 5.0) : Cooma. SSSSSa54—=—_— (“w 2 LOU i). «= «| ++ eee == a eZee a 2 [TL BerT il tel TI i Pade TTT ETT ae i ee 1b S v= ee A Pi oerTaTTry yi pweP one wens VeE~Celiecior to Emitter Veltage=V *

NE C ELECTRONICS INC 98 DEPP b427Ses 0019150 2 | “43-25 . ) BASE ANO COLLECTOR SATURATION OC CURRENT GAIN va COLLECTOR CURRENT VOLTAGE ‘& COLLECTOR CURRENT Sr L =a ttt = Cony Corie Fi tT Feri — oC See tt 3 a | Soe 2 Se @ om OUZZ7T CT» Pre Fy SWS SS Se Bazan) «pe ERR . 10 ecu TTT TTT oe 7 “00 By 4 "6.01 OL 5 ig—Collectoe Current=A " I¢~Cellector Current=A . Hy