UPA1437 NEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

DESCRIPTION

The µPA1437 is PNP silicon epitaxial Darlington Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.

FEATURES

  • Easy mount by 0.1 inch of terminal interval.
  • High hFE for Darlington Transistor.

ORDERING INFORMATION

Part Number Package Quality Grade µPA1437H 10 Pin SIP Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (T a = 25 ˚C) Collector to Base Voltage V CBO –100 V Collector to Emitter Voltage V CEO –100 V Emitter to Base Voltage V EBO –7 V Collector Current (DC) I C(DC) m3 A/unit Collector Current (pulse) I C(pulse)* m6 A/unit Base Current (DC) I B(DC) –0.3 A/unit Total Power Dissipation P T1 3.5 W Total Power Dissipation P T2* 28 W Junction Temperature T j 150 ˚C Storage Temperature T stg –55 to +150 ˚C * PW ≤ 300 µs, Duty Cycle ≤ 10 % 4 Circuits, T a = 25 ˚C * 4 Circuits, T c = 25 ˚C Document No. IC-3516 Date Published September 1994 P Printed in Japan µPA1437 PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE PACKAGE DIMENSION (in millimeters) 1 2 3 4 5 6 7 8 910 26.8 MAX. 1.4 0.6 ±0.1 2.54 2.5 4.0 10 MIN. 1.4 0.5 ±0.1 CONNECTION DIAGRAM 468 579 (C) (E) (B) R1 R2 PIN No. 2, 4, 6, 8 3, 5, 7, 9 1, 10 : Base (B) : Collector (C) : Emitter (E) R 1 = 8.3 kΩ R2 = 600 Ω . . . . The information in this document is subject to change without notice. © 1994 DATA SHEET

µPA1437 ELECTRICAL CHARACTERISTICS (T a = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector to Emitter V CEO(SUS) –100 V I C = –1.5 A, I B = –1.5 mA, Sustaining Voltage L = 1 mH Collector Leakage Current ICBO –10 µA VCB = –100 V, I E = 0 Emitter Leakage Current IEBO –1 mA VEB = –5 V, I C = 0 DC Current Gain hFE1 * 1000 — VCE = –2 V, I C = –0.5 A DC Current Gain hFE2 * 2000 20000 — VCE = –2 V, I C = –1.5 A Collector Saturation Voltage VCE(sat) * –0.9 –1.2 V IC = –1.5 A, I B = –1.5 mA Base Saturation Voltage VBE(sat) * –1.5 –2 V IC = –1.5 A, I B = –1.5 mA Turn On Time ton 1 µs Storage Time tstg 3 µs Fall Time t f 1 µs * PW ≤ 350 µs, Duty Cycle ≤ 2 % / pulsed SWITCHING TIME TEST CIRCUIT IB2 VIN PW PW = 50 s Duty Cycle ≤ 2 % µ. . VBB = 5 V. . IB1 IC T.U.T. RL = 33 Ω VCC = –50 V. . . . Base Current Wave Form Collector Current Wave Form I IB1 IC 10 % 90 % ton tstg tf IC = –1.5 A IB1 = –IB2 = –1.5 mA VCC = 50 V, R L = 33 Ω See test circuit . .. .

µPA1437 TYPICAL CHARACTERISTICS (T a = 25 ˚C) DERATING CURVE OF SAFE OPERATING AREA dT - Percentage of Rated Current - % 100 TC - Case Temperature - ˚C SAFE OPERATING AREA IC - Collector Current - A –10 VCE - Collector to Emitter Voltage - V TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W Ta - Ambient Temperature - ˚C TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W TC - Case Temperature - ˚C DC CURRENT GAIN vs. COLLECTOR CURRENT hFE - DC Current Gain –0.01 100000 IC - Collector Current - A BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE (sat) - Collector Saturation Voltage - V VBE (sat) - Base Saturation Voltage - V –0.01 –100 IC - Collector Current - A 50 100 150 S/b Limited Dissipation Limited –0.5 –0.1 –0.05 –0.01 –5 –10 –50 –100 VCEO MAX. TC = 25 ˚C Single Pulse NEC PA1437µ 25 50 75 100 125 150

4 Circuits Operation

3 Circuits Operation

2 Circuits Operation

1 Circuit Operation

–0.1 –1.0 –10 VCE = –2.0 V Pulsed 125 ˚C 75 ˚C 25 ˚C Ta = –25 ˚C IC = 1000·IB Pulsed –10 –1.0 –0.1 –0.1 –1.0 –10 VBE (sat) VCE (sat) IC(pulse) MAX. IC(DC) MAX. Dissipation Limited S/b Limited 50 ms 1 ms PW = 30 s µ µ 100 s µ 300 s

µPA1437 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGETRANSIENT THERMAL RESISTANCE Rth (j-c) - Transient Thermal Resistance - ˚C/W 0.1 100 PW - Pulse Width - ms IC - Collector Current - A –5.0 VCE - Collector to Emitter Voltage - V VCE ≤ 10 V 0.1 –4.0 –3.0 –2.0 –1.0 –500 –450 –400–350 –300 –200 –150 –100 IB = –50 Aµ –250

µPA1437 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134

µPA1437 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 [MEMO]