UPA1434 NEC | Alldatasheet

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Technical content

DESCRIPTION

The µPA1434 is NPN silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.

FEATURES

  • Easy mount by 0.1 inch of terminal interval.
  • High hFE. Low V CE(sat). hFE = 800 to 3200 (at I C = 0.5 A) VCE(sat) = 0.5 V MAX. (at I C = 2 A)

ORDERING INFORMATION

Part Number Package Quality Grade µPA1434H 10 Pin SIP Standard Please refer to “Quality grade on NEC Semiconductor Device” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (T a = 25 ˚C) Collector to Base Voltage V CBO 60 V Collector to Emitter Voltage V CEO 60 V Emitter to Base Voltage V EBO 7V Collector Current (DC) I C(DC) 3 A/unit Collector Current (pulse) I C(pulse)* 6 A/unit Base Current (DC) I B(DC) 0.6 A/unit Total Power Dissipation P T1 3.5 W (Ta = 25 ˚C) Total Power Dissipation P T2 28 W (Tc = 25 ˚C) Junction Temperature T j 150 ˚C Storage Temperature T stg –55 to +150 ˚C * PW ≤ 300 µs, Duty Cycle ≤ 10 % ** 4 Circuits Document No. IC-3480 Date Published September 1994 P Printed in Japan µPA1434 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE PACKAGE DIMENSION (in millimeters) 26.8 MAX. 1.4 0.6 ±0.1 2.54 0.5 ±0.1 1.4 4.0 10 MIN. 2.5 2 3 4 5 6 7 8 910 CONNECTION DIAGRAM 101 PIN NO. 2, 4, 6, 8: Base (B) 3, 5, 7, 9: Collector (C) 1, 10: Emitter (E) The information in this document is subject to change without notice.

µPA1434 ELECTRICAL CHARACTERISTICS (T a = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Leakage Current ICBO 10 µA VCB = 60 V, I E = 0 Emitter Leakage Current IEBO 10 µA VEB = 5 V, I C = 0 DC Current Gain hFE1 * 800 3200 — VCE = 5 V, I C = 0.5 A DC Current Gain hFE2 * 500 — VCE = 5 V, I C = 3 A Collector Saturation Voltage VCE(sat) * 0.5 V IC = 2 A, I B = 20 mA Base Saturation Voltage VBE(sat) * 1.2 V IC = 2 A, I B = 20 mA Turn On Time ton 1 µs Storage Time tstg 3 µs Fall Time t f 1.5 µs * PW ≤ 350 µs, Duty Cycle ≤ 2 % /pulsed SWITCHING TIME TEST CIRCUIT VIN IB1 IC RL = 25 Ω IB2 PW PW = 50 s Duty Cycle ≤ 2 % µ VBB = –5 V VCC = 50 VT.U.T. ton 90 % 10 % Collector Current Wave Form Base Current Wave Form tstg tf IC IB2 IB1 IC = 2 A IB1 = –IB2 = 10 mA VCC = 50 V, R L = 25 Ω See test circuit . . . .

µPA1434 TYPICAL CHARACTERISTICS (T a = 25 ˚C) 0.01 0.05 0.1 0.5 25 50 75 100 125 150 SAFE OPERATING AREA VCE - Collector to Emitter Voltage - V IC - Collector Current - A TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Ta - Ambient Temperature - ˚C PT - Total Power Dissipation - W dT - Percentage of Rated Current - % TC = 25 ˚C Single Pulse NEC PA1434H µ

4 Circuits Operation

3 Circuits Operation

2 Circuits Operation

1 Circuit Operation

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W 25 50 75 100 125 150 TC - Case Temperature - ˚C

4 Circuits

3 Circuits

2 Circuits

1 Circuit

IC(pulse) MAX. VCEO MAX. S/b Limited Dissipation Limited 1 ms S/b Limited 50 ms IC(DC) MAX. Dissipation Limited TC - Case Temperature - ˚C DERATING CURVE OF SAFE OPERATING AREA PW = 30 s µ 300 s µ 100 s µ 0 12345 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE - Collector to Emitter Voltage - V IC - Collector Current - A IB = 0.5 mA 0.1 0.1 1 TRANSIENT THERMAL RESISTANCE PW - Pulse Width - ms Rth(j-c) - Transient Thermal Resistance - ˚C/W VCE ≤ 10 V 100 10 100

µPA1434 0.001 0.005 1000 500 200 100 10000 5000 2000 DC CURRENT GAIN vs. COLLECTOR CURRENT IC - Collector Current - A hFE - DC Current Gain VCE = 5 V Pulsed 0.01 0.05 0.1 0.5 1 5 10 0.01 0.001 0.005 0.1 0.05 0.02 0.5 0.2 BASE AND COLLECTOR SATURATION VOLTAGE vs.COLLECTOR CURRENT IC - Collector Current - A IC = 100·IB Pulsed 0.01 0.05 0.1 0.5 1 5 10 VCE(sat) - Collector Saturation Voltage - V VBE(sat) - Base Saturation Voltage - V VCE(sat) VBE(sat) 75 ˚C 25 ˚C –25 ˚C Ta = 125 ˚C

µPA1434 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134

µPA1434 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 [MEMO]