UPA1428

UPA1428A NEC | Alldatasheet

Document overview

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Technical content

DESCRIPTION

The µPA1428A is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber 4 circuits designed for driving solenoid, relay, lamp and so on.

FEATURES

• Surge Absorber built in.
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.

ORDERING INFORMATION

Part Number Package Quality Grade µPA1428AH 10 Pin SIP Standard Please refer to “Quality grade on NEC Semiconductor Device” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (T a = 25 ˚C) Collector to Base Voltage V CBO 60 ±10 V Collector to Emitter Voltage V CEO 60 ±10 V Emitter to Base Voltage V EBO 8V Surge Sustaining Energy E CEO(sus) 30 mJ/unit Collector Current (DC) I C(DC) ±2 A/unit Collector Current (pulse) I C(pulse)* ±3 A/unit Base Current (DC) I B(DC) 0.2 A/unit Total Power Dissipation P T1 3.5 W Total Power Dissipation P T2* 28 W Junction Temperature T j 150 ˚C Storage Temperature T stg –55 to +150 ˚C * PW ≤ 350 µs, Duty Cycle ≤ 2 % 4 Circuits, T a = 25 ˚C * 4 Cuircuits, T c = 25 ˚C Document No. IC-3479 (O.D. No. IC-8359) Date Published September 1994 P µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE PACKAGE DIMENSION (in millimeters) 26.8 MAX. 1.4 0.6 ±0.2 2.54 0.5 ±0.2 1.4 4.0 10 MIN. 2.5 2 3 4 5 6 7 8 910 CONNECTION DIAGRAM (B) (E) (C) PIN NO. 2, 4, 6, 8: Base (B) 3, 5, 7, 9: Collector (C) 1, 10: Emitter (E) R 1 = 10 kΩ R2 = 900 Ω. . . . The information in this document is subject to change without notice.

µPA1428A ELECTRICAL CHARACTERISTICS (T a = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Leakage Current ICBO 1 µA VCB = 40 V, I E = 0 Emitter Leakage Current IEBO 5 mA VEB = 5 V, I C = 0 Collector to Emitter V CEO(sus) 50 60 70 V I C = 1 A, L = 1 mH Sustaining Voltage DC Current Gain hFE1 * 2000 20000 — VCE = 2 V, I C = 1 A DC Current Gain hFE2 * 500 — VCE = 2 V, I C = 2 A Collector Saturation Voltage VCE(sat) * 1.0 1.5 V IC = 1 A, I B = 1 mA Base Saturation Voltage VBE(sat) * 1.7 2 V IC = 1 A, I B = 1 mA Turn On Time ton 0.4 µs Storage Time tstg 1.5 µs Fall Time t f 0.4 µs * PW ≤ 350 µs, Duty Cycle ≤ 2 %/pulsed SWITCHING TIME TEST CIRCUIT IC = 1 A IB1 = –IB2 = 2 mA VCC = 50 V, R L = 50 Ω See test circuit . . VIN IB1 IC RL = 50 Ω IB2 PW PW = 50 s Duty Cycle ≤ 2 % µ VBB = –5 V VCC = 50 VTUT ton 90 % 10 % Collector Current Wave Form Base Current Wave Form tstg tf IC IB2 IB1

µPA1428A TYPICAL CHARACTERISTICS (T a = 25 ˚C) dT - Percentage of Rated Current - %20 100 0 50 100 150 S/b Limited Dissipation Limited TC - Case Temperature - ˚C DERATING CURVE OF SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W 25 50 75 100 125 150 TC - Case Temperature - ˚C

4 Circuits

3 Circuits

2 Circuits

1 Circuit

DC CURRENT GAIN vs. COLLECTOR CURRENT IC - Collector Current - A hFE - DC Current Gain 100 m 1 10 VCE = 2.0 V Pulsed 75 ˚C25 ˚C–25 ˚C Ta = 125 ˚C 0.1 51 0 25 50 75 100 125 150 SAFE OPERATING AREA VCE - Collector to Emitter Voltage - V IC - Collector Curreut - A TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Ta - Ambient Temperature - ˚C PT - Total Power Dissipation - W TC = 25 ˚C Single Pulse NEC PA1428Aµ

4 Circuits Operation

3 Circuits Operation

2 Circuits Operation

1 Circuit Operation

0.2 0.5 VCEO TYP. Dissipation Limited S/b Limited 10 ms 1 ms 200 s µ PW = 100 s µ 0.1 0.1 0.5 TRANSIENT THERMAL RESISTANCE PW - Pulse Width - ms Rth(j-c) - Transient Thermal Resistance - ˚C/W 1 10 100 VCE ≤ 10 V

µPA1428A 0.1 0.1 IC - Collector Current - A VCE(sat) - Collector Saturation Voltage - V 11 0 IC /IB = 1000 Pulsed IC /IB = 1000 Pulsed 0.1 0.1 SWITCHING TIME vs. COLLECTOR CURRENT IC - Collector Current - A VF(E-C) - Dumper Diode Voltage - V 110 10 m 100 100 m DUMPER DIODE CHARACTERISTICS IF(E-C) - Dumper Diode Forward Current - A 1.0 3.0 4.0 IC /IB = 500 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 0.1 0.1 IC - Collector Current - A VBE(sat) - Base Saturation Voltage - V 11 0 BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT 75 ˚C Ta = –25 ˚C 25 ˚C 125 ˚C 75 ˚C 25 ˚C 125 ˚C tf ton tstg ton, tstg, tf - Switching Time - s µ Ta = –25 ˚C

µPA1428A REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134

µPA1428A No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 [MEMO]