UP3855

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UNISONIC TECHNOLOGIES CO., LTD UP3855 PNP SILICON TRANSISTOR www.unisonic.com.tw 1 of 4 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R225-007.A PNP MEDIUM POWER LOW SATURATION TRANSISTOR  DESCRIPTION The UTC UP3855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it ideal for applications, such as driving and power management functions and DC-DC circuits.  FEATURES * Extremely low saturation voltages * Peak current up to 10A * 4A continuous current  ORDERING INFORMATION Pin Assignment Ordering Number Package 1 2 3 Packing UP3855G-AA3-R SOT-223 B C E Tape Reel Note: Pin Assignment: B: Base C : C o l l e c t o r E : E m i t t e r  MARKING

UP3855 PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw Q W - R 2 2 5 - 0 0 7 . A  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO -180 V Collector-Emitter Voltage V CEO -140 V Emitter-Base Voltage V EBO -7 V Continuous Collector Current (Note 1) I C -4 A Peak Pulse Current I CM -10 A 3.0 (Note 1) Power Dissipation P D 1.6 (Note 2) W Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL RESISTANCE PARAMETER SYMBOL RATINGS UNIT 42 (Note 1) Junction to Ambient θJA 78 (Note 2) °C/W Notes: 1. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage V CBO I C=-100μA -180 -200 V Collector-Emitter Breakdown Voltage V CER I C=-1μA, RB≤1kΩ -180 -200 V Collector-Emitter Breakdown Voltage V CEO I C=-10mA (Note 1) -140 -160 V Emitter-Base Breakdown Voltage V EBO I E=-100μA -7.0 -8.0 V VCB=-150V <1 -20 nA Collector Cut-Off Current I CBO VCB=-150V, TA=100°C -0.5 μA <1 -20 nA Collector Cut-Off Current I CER VCB=-150V, R≤1kΩ TA=100°C -0.5 μA Emitter Cut-Off Current I EBO V EB=-6V <1 -10 nA IC=-0.1A, IB=-5mA -40 -60 mV IC=-0.5A, IB=-50mA -55 -80 mV IC=-1A, IB=-100mA -85 -120 mV Collector-Emitter Saturation Voltage (Note 1) VCE(SAT) IC=-3A, IB=-300mA -275 -360 mV Base-Emitter Saturation Voltage V BE(SAT) I C=-3A, IB=-300mA(Note 1) -940 -1040 mV Base-Emitter Turn-On Voltage V BE(ON) I C=-3A, VCE=-5V (Note 1) -830 -930 mV IC=-10mA, VCE=-5V 100 225 IC=-1A, VCE=-5V 100 200 300 IC=-3A, VCE=-5V 45 100 Static Forward Current Transfer Ratio (Note 1) hFE IC=-10A, VCE=-5V 5 Transition Frequency f T IC=-100mA, VCE=-10V f=50MHz 120 MHz Output Capacitance (Note 1) C OBO V CB=-10V, f=1MHz 33 pF tON 150 Switching Times tOFF IC=-1A, VCC=-50V, IB1=-IB2=-100mA 750 ns Note: 1. Measured under pulsed conditions. Pulse width ≤300μs; duty cycle≤2%.

UP3855 PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw Q W - R 2 2 5 - 0 0 7 . A  TYPICAL CHARACTERISTICS 0.01 Collector-Emitter Voltage,-VCE(V) Collector Current, -IC (A) 1010.1 0.1 100 1.0s 100 TA=25ºC Power Dissipatio vs Ambient Temperature DC 10ms 100ms 1ms CE(SAT) (V) 100m 1 VCE(SAT) vs. IC 0.0 0.5 1.0 1.5 2.0 Collector Current, -IC (A) IC /I B=10 25°C 55°C Norm alised Gain 0.6 0.4 hFE vs. IC 0.8 1.0 1.2 1.4 1.6 1m 10m 100m 150 200 250 250 100 Typical Gain(h FE) Collector Current, -IC (A) 55ºC 25ºC BE(SAT) (V) 1m 10m 100m 1 0.4 0.6 0.8 1.0 1.2 55°C 25°C VBE(SAT) vs. IC Collector Current, -IC (A) 1.4 IC / IB=10 VCE=5V CE(SAT)(V) 1m 10m 100m 1 VCE(SAT) vs. IC Collector Current, -IC (A) 10m 100m IC /I B=10 IC /I B=20 IC /I B=50 TA=25°C BE(ON) (V) 1m 10m 100m 1 0.4 0.6 0.8 1.0 1.2 55°C 25°C VBE(ON) vs. IC Collector Current, -IC (A) 1.4 VCE=5V 300μs

UP3855 PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw Q W - R 2 2 5 - 0 0 7 . A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.