UP2003L-TN3-R

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UNISONIC TECHNOLOGIES CO., LTD UP2003 Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-202.C 9A, 25V P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UP2003 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable fo r use as a load switch or in PWM applications.  FEATURES * RDS(ON)<35 mΩ @ VGS =-4.5 V, ID =-7 A * RDS(ON)<20 mΩ @ VGS =-10 V, ID =-9 A  SYMBOL  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UP2003L-TN3-R UP2003G-TN3-R TO-252 G D S Tape Reel  MARKING

UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw QW-R502-202.C  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain Source Voltage V DSS -25 V Gate Source voltage V GSS ±20 V Continuous Drain Current I D -9 A Pulsed Drain Current (Note 1) I DM -36 Power Dissipation P D 2.5 W Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction-to-Ambient θJA 50 °C/W Junction-to-Case θJC 25 °C/W  ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V, ID=-250µA -25 V Drain Source Leakage Current I DSS V DS =-25V, VGS =0V -1 µA Gate-Body Leakage Current I GSS V DS =0V, VGS =±20V ±100 nA ON CHARACTERISTICS Gate-Threshold Voltage V GS(TH) V DS =VGS, ID =-250µA -1.0 -1.5 -3.0 V On-State Drain Current (Note 2) I D(ON) V DS = -5V, VGS = -10V -50 A Drain-Source On-Resistance (Note 2) R DS(ON) VGS =-4.5V, ID =-7A 25 35 mΩVGS =-10V, ID =-9A 15 20 DYNAMIC PARAMETERS Input Capacitance C ISS VDS =-15V, VGS =0V, f=1MHz 1610 pF Output Capacitance C OSS 410 Reverse Transfer Capacitance C RSS 200 SWITCHING PARAMETERS (Note 3) Gate to Source Charge Q G VDS =-12.5V(BR)DSS, VGS =-10V, ID =-9 A 17 24 nCGate Charge at Threshold Q GS 5 Gate to Drain Charge Q GD 6 Turn-ON Delay Time t D(ON) VDS =-12.5V, ID≈-1A, VGS =-10V, RGS =6Ω ,RL=1Ω 6.2 9.3 ns Turn-ON Rise Time t R 10 Turn-OFF Delay Time t D(OFF) 18 Turn-ON Delay Time t D(ON) 10 Turn-OFF Fall-Time t F 5 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Continuous Forward Current I S -9 A Diode Pulse Current (Note 1) I SM -36 Forward Voltage (Note 2) V SD I F=IS, VGS=0V -1.2 V Note: 1. Pulse width limited by maximum junction temperature. 2. Pulse test: Pulse Width ≤ 300μsec, Duty Cycle ≤ 2% 3. Independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw QW-R502-202.C  TYPICAL CHARACTERISTICS Drain Current,-ID (A) Drain Current,-ID (A) 1.6 1.4 1.2 0.8 0 25 50 75 100 125 150 1750 2.4 Junction Temperature (°С) On-Resistance vs. Junction Temperature Normalized Drain to Source On-Resistance, RDS(ON) (mΩ) Drain Current,-ID (A) On-Resistance vs. Drain Current and Gate Voltage VGS=-3.5V -4.0V -4.5V -5V -6V -7V -10V 10 20 30 40 50 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 Normalized Drain to Source On-Resistance, RDS(ON) (mΩ) ID=-9A VGS=-10V 0.6 -25-50 Drain to Source On-Resistance, RDS(ON) (mΩ) Reverse Drain Current,-IS (A)

UNISONIC TECHNOLOGIES CO., LTD 4 of 5 www.unisonic.com.tw QW-R502-202.C  TYPICAL CHARACTERISTICS(Cont.) 1260 2500 500 0 5 10 15 20 Gate to Source Voltage,-VGS (V) Gate Charge,-QG (nC) Gate-Charge Characteristics Capacitance Characteristics Capacitance (pF) Drain to Source Voltage,-VDS (V) ID=-9A VDS=-5V -10V -15V 18 24 30 CISS COSS CRSS f=1MHZ VGS=0V 25 30 2000 1500 1000 0.001 0.01 0.1 1 10 100 10001001010.1 0.1 100 Pulse Width (s) Single Pulse Maximum Power Dissipationg Drain to Source Voltage,-VDS (V) Maximum Safe Operating Area 100μs 1ms 10ms 100ms 10s DC RDS(ON) Limited VGS=-10V Single Pulse θJA=125°С/W TA=25°С 0.01 Single Pulse θJA=125°С/W TA=25°С Normalized Effective Transient Thermal Resistance,r(t)

UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw QW-R502-202.C UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.