UN0812N4R6-T63 UNSEMI | Alldatasheet
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Technical content
Revision March 1,2022 www.unsemi.com.tw www.unsemi.com.tw Package Marking And Ordering information For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.1/7 N-Channel Enhancement Mode MOSFET Part Number Package Type packaging Reel pcs UN0812N4R6-T63 TO-263 Tape & Reel 800 TO-263Feature Product Summary
Applications
RDS(ON) (@VGS=10V ID =50A) 80V 120A ≤5.3mΩ Uses advanced SGT technology Extremely low on-resistance R DS(ON) Excellent gate charge x R DS(ON) product(FOM) Motor Drives SR (Synchronous rectification) DC/DC converter General purpose applications
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.2/7 UN0812N4R6-T63 N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings TC = 25℃ unless otherwise specified Thermal Characteristics Parameter Symbol Max Units Thermal Resistance from Junction to Ambient Thermal Resistance from Junction to case RθJA RθJC 0.7 ℃/W ℃/W Parameter Symbol Maximum Units Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse (L=0.5mH,Rg=25Ω) Gate-Source Voltage Power Dissipation Operating Junction and Storage Temperature TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) VDS lD lD pulse EAS VGS PD TJ,Tstg 130 120 480 375 ±20 179 -55~150 V A A A A mJ V W
Revision March 1,2022 www.unsemi.com.tw N-Channel Enhancement Mode MOSFET ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.3/7 UN0812N4R6-T63 Electrical Characteristics at TC = 25℃ unless otherwise specified RG Ciss Coss Crss Qg Qgs Qgd td(ON) tr td(OFF) tf VGS = 0V VDS = 40V F = 1MHz VDS = 0V, VGS = 0V F = 1MHz VDD = 40V RL = 3Ω, VGS = 10V VDS = 40V, VGS = 10V IDS = 25A 4032 546 65.7 24.9 13.9 20.1 45.1 DYNAMIC PARAMETERS V ns nC Ω pF pF pF nC nC nC ns ns ns ns Body-Diode PARAMETERS Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VSD trr Qrr 1.20.9 340 ISD = 50A, VGS = 0V IF = 20A di/dt = 500A/µs Parameter Symbol Test Conditions STATIC PARAMETERS Min Typ Max Units Drain-Source Breakdown Voltage Gate-source leakage current Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge total Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VGS=0V , ID = 250μA VGS=0V VDS = 80V VGS=20V , VDS = 0V VGS = VDS , ID = 250μA VGS = 10V , ID = 50A VDS = 5V, ID = 50A 2.0 100 4.0 5.3 3.0 4.6 BVDSS IGSS VGS (TH) RDS(ON) gts V μA μA nA V mΩ S TC = 25°C TC = 125°C Drain-Source Leakage Current IDSS
Revision March 1,2022 www.unsemi.com.tw N-Channel Enhancement Mode MOSFET ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.4/7 Electrical Characteristics Curves UN0812N4R6-T63 Fig. 2 Typical Gate Charge Vs Gate to Source Voltage Fig. 1 Typial Output Characteristic Fig. 4 Typical Capacitance Vs Drain to Source VoltageFig. 3 Typical Body Diode Transfer Cancteristcs Fig. 6 Typical Drian to Source on Resistance VS Junction Temperature Fig. 5 Typical Breakdown Voltage vs Junction Temperature
Revision March 1,2022 www.unsemi.com.tw N-Channel Enhancement Mode MOSFET ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.5/7 Electrical Characteristics Curves UN0812N4R6-T63 Fig. 8 Typical Drain to Source ON Resistance Vs Drain Current Fig. 7 Maximum Forward Bias Safe Operating Area Fig. 10 Typical Threshold Voltage Vs Case Temperature Fig. 9 Maximum EAS vs Channel Temperature Fig. 11 Maximum Efetive Thermal Impedance , Junction to Case Fig. 12 Maximum Power Dssipation Vs Case Temperature
Revision March 1,2022 www.unsemi.com.tw N-Channel Enhancement Mode MOSFET ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.6/7 UN0812N4R6-T63 Test Circuit Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Revision March 1,2022 www.unsemi.com.tw N-Channel Enhancement Mode MOSFET ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.7/7 UN0812N4R6-T63 TO-263W L L1 option A option B L3 T I 2ğ1 0.25 gauge plane W L T θ 9.80 0.70 1.17 9.00 1.00 1.20 15.0 2.20 4.30 1.20 2.20 0.45 (5.00) (8.00) (7.90) (0.197) (0.315) (0.311) 10.20 0.95 1.62 9.40 1.40 1.60 15.6 2.80 4.70 1.40 2.60 0.65 0.25 Symbol Dimensions In Millimeters Dimensions In Inches Min 0.390 0.028 0.046 0.354 0.039 0.047 0.590 0.087 0.169 0.047 0.086 0.45 MinMax 0.402 0.037 0.064 0.370 0.055 0.063 0.614 0.110 0.185 0.055 0.102 0.65 0.10 Max
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Disclaimer ROHS UNSEMI RESERVES THE RIGHT TO MAKE CHANGE ON OUR PRODUTS , PRODUCTS SPECIFICATION AND DATA WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. UN SEMICONDUCTOR LIMITED its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “UNSEMI”)does not give any representations or warranties for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. In no event shall UNSEMI be liable for any indirect, incidental, punitive, special or consequential damages (including any and all implied warranties, warranties of fitness for particular purpose, non-infringement and merchantability.) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Statements regarding the suitability of products for certain types of applications are based on UNSEMI knowledge of typical requirements that are often placed on UNSEMI products in generic applications. Such statements are not binding, statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify UNSEMI's terms and conditions of purchase, including but not limited to the warranty expressed therein. Unless otherwise agreed in writing, UNSEMI product is not designed, authorized or warranted to be suitable for use in medical life-saving, or life-sustaining application , nor in applications where failure or malfunction of a UNSEMI product can reasonably be expected to result in personal injury, death or severe property or environmental damage. UNSEMI and its suppliers accept no liability for inclusion or use of UNSEMI products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. All referenced brands, product names, service names and trademarks are the property of their respective owners.