UN0608N6R6-T52 UNSEMI | Alldatasheet
Document overview
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Technical content
Features
³Use Trench MOSFET T echnology ³High Density Cell Design For Low RDS(ON) ³Material: Halogen F ree ³Reliable and R ugged ³Avalanche Rated ³Low Leakage Current
Applications
PWM Applications ³Load Switch ³Power Management in P ortable/D esktop PCs ³DC/DC Conversion N-Channel Enhancement Mode MOSFET Package Marking And Ordering information Part Number Package Packaging Reel pcs UN0608N6R6-T52 TO-252 Tape & Reel 2500 D G S UN0608N XXXX G D S TO-252 Product Summary VDS ID RDS(ON) (@VGS=10V ID =30A) 68V 80A ≤8.6mΩ
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified) Thermal Characteristics Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.2/7 Note: 1) Tj=25℃ ,VDD=68V, VG S=10V,L=0.3mH,Rg=25Ω. Parameter Symbol Max. Units Parameter Symbol Max. Units Drain-Source Voltage Thermal Resistance from Junction to Case RθJC 0.85 ℃/W Gate-Source Voltage Continuous Drain Current TC=25℃ TC=75℃ Power Dissipation Pulsed Drain Current Avalanche Current, Single Pulsed 1) Avalanche Energy, Single Pulsed 1) Junction and Storage Temperature Range VDS VGS ID A PD lDM IAS EAS TJ,Tstg ±20 147 320 205 -55~+150 V V W A A mJ ROHSROHS UN0608N6R6-T52 N-Channel Enhancement Mode MOSFET
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.3/7 Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units ROHSROHS UN0608N6R6-T52 N-Channel Enhancement Mode MOSFET VGS = 0V VDS = 25V F = 1MHz VGS = 10V VDS = 30V ID = 20A DYNAMIC PARAMETERS SWITCHING PARAMETERS 4065 266 230 pF pF pF nC nC nC nS nS nS nS Ciss Coss Crss Qg Qgs Qgd td (ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Total Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Forward Voltage VSD 1.5IS = 30A , VGS = 0V BODY-DIODE PARAMETERS V Parameter Symbol Test Conditions STATIC PARAMETERS Min Typ. Max. Units Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance VGS = 0V, ID = 250μA VDS=68V , VGS = 0V VGS=±20V , VDS = 0V VGS = VDS , ID = 250μA VGS = 10V , ID = 30A VDS = 5V , ID = 30A 1.5 1.0 ±100 3.5 8.6 150 2.5 6.6 BVDSS IDSS IGSS VGS (TH) RDS(ON) gfs V μA nA V mΩ S VDS = 30V, VGS = 10V RG = 3Ω , ID = 20A
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.4/7 Electrical Characteristics Curves ROHSROHS UN0608N6R6-T52 N-Channel Enhancement Mode MOSFET Fig.2 Typical Tansfer Characeristic Fig.4 Source-Drain Diode Forward Fig.6 Capacitance Characteristics Fig.1 Output Characteristic Fig.3 On-Resistance Vs Drain Current Fig.5 Gate Charge Characteristics VDS-Drain Source VoltagečVĎ ID-Drain Current (A) VGS-Gate Source VoltagečVĎ ID-Drain Current (A) ID-Drain CurrentčAĎ RDS(on)-On-Resistance (mΩ) VSD-Source Drain VoltagečVĎ IS-Reverse Drain Current(A) Qg-Gate ChargečnCĎ VGS-Gate Source Voltage (V) VDS-Drain Source VoltagečVĎ C-Capacitance (pF)
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.5/7 Electrical Characteristics Curves Fig.7 Normalized Breakdown Voltage Vs. Junction Temperature Fig.11 Maximum EffectiveTransient Thermal Impedance, Junction-to-Case Fig.8 Normalized on Resistance Vs. Junction Temperature Fig.9 Maximum Safe Operating Area Fig.10 Maximum Continuous Drain Current Vs. Case Temperature ROHSROHS UN0608N6R6-T52 N-Channel Enhancement Mode MOSFET VBR(DSS)-Normalized Breakdown Voltage (V) TJ-Junction Temperatureč°CĎ TJ-Junction Temperatureč°CĎ Tc-Case Temperatureč°CĎ RDS(on)-On-Resistance (mΩ) VDS-Drain Source VoltagečVĎ ID-Drain Current (A) ID-Drain Current (A) Square Wave Pulse DurationčsecĎ Maximum Effective Transient Thermal Impedance
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.6/7 Test Circuit Fig.1-2 Switching WaveformFig.1-1 Switching times test circuit Fig.2-2 Gate charge waveformFig.2-1 Gate charge test circuit Fig.3-2 Avalanche waveformFig.3-1 Avalanche test circuit ROHSROHS UN0608N6R6-T52 N-Channel Enhancement Mode MOSFET
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.7/7 Package Outline Dimensions (Units: mm) ROHSROHS UN0608N6R6-T52 N-Channel Enhancement Mode MOSFET Symbol Min. Max. InchesMillimeters A b c D E e L V 2.200 0.000 0.400 0.430 0.430 6.350 5.200 5.400 9.500 1.400 2.550 2.400 0.127 0.600 0.580 0.580 6.650 5.400 5.700 9.900 1.780 2.900 1.270TYP 2.540TYP 0.050TYP 1.000TYP 3.45REF 0.136REF Min. Max. 0.087 0.000 0.016 0.017 0.017 0.250 0.205 0.213 0.374 0.055 0.100 0.094 0.005 0.024 0.023 0.023 0.262 0.213 0.224 0.390 0.070 0.114
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Disclaimer ROHS UNSEMI RESERVES THE RIGHT TO MAKE CHANGE ON OUR PRODUTS , PRODUCTS SPECIFICATION AND DATA WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. UN SEMICONDUCTOR LIMITED its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “UNSEMI”)does not give any representations or warranties for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. In no event shall UNSEMI be liable for any indirect, incidental, punitive, special or consequential damages (including any and all implied warranties, warranties of fitness for particular purpose, non-infringement and merchantability.) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Statements regarding the suitability of products for certain types of applications are based on UNSEMI knowledge of typical requirements that are often placed on UNSEMI products in generic applications. Such statements are not binding, statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify UNSEMI's terms and conditions of purchase, including but not limited to the warranty expressed therein. Unless otherwise agreed in writing, UNSEMI product is not designed, authorized or warranted to be suitable for use in medical life-saving, or life-sustaining application , nor in applications where failure or malfunction of a UNSEMI product can reasonably be expected to result in personal injury, death or severe property or environmental damage. UNSEMI and its suppliers accept no liability for inclusion or use of UNSEMI products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. All referenced brands, product names, service names and trademarks are the property of their respective owners.