UN0602N025-T52 UNSEMI | Alldatasheet
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Revision March 1,2022 www.unsemi.com.tw www.unsemi.com.tw Package Marking And Ordering information For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.1/7
Applications
N-Channel Enhancement Mode MOSFET VDS ID(@TC=25℃) ID(@TC=100℃) RDS(ON) (@VGS=10V ID =15A) RDS(ON) (@VGS=4.5V ID =10A) 60V 26A 15A ≤35mΩ ≤50mΩ Advanced trench cell design Low Thermal Resistance Low Gate Charge Halogen-Free & Lead-Free Motor/Body Load Control Load Switch DC-DC converters and Off-line UPS Part Number Package Type packaging Reel pcs UN0602N025-T52 TO-252 Tape & Reel 2,500 TO-252 D G S UN0602N XXXX G D S
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.2/7 ROHSROHS UN0602N025-T52 N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings TC = 25℃ unless otherwise specified Parameter Symbol Maximum Units Drain to Source Voltage Peak Drain Current, Pulsed 1) Avalanche Current Gate-Source Voltage Single Pulse Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range VDs lDM IAS VGS EAS Ptot Tstg,TJ ±20 -55~150 V A A V mJ W Thermal Characteristics Parameter Symbol Max Units Thermal Resistance from Junction to Ambient Thermal Resistance, Junction to Case 3) RθJA RθJC 62.5 3.2 ℃/W ℃/W Continuous Drain Current AID @TC=25℃ @TC=100℃ Notes: 1) Pulse Test: Pulse Width ≤ 100μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ (MAX) = 150°C. 2) Limited by TJ (MAX), starting TJ = 25°C, L = 0.1mH, Rg = 25 Ω, ID = 18 A, VGS = 10 V. 3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square
VGS = 0V VDS = 25V F = 1MHz VDS = 30V ID = 20A VDS = 0V,VGS = 0V, F = 1MHZ DYNAMIC PARAMETERS 1.8 545 13.8 7.9 4.9 RG Ciss Coss Crss Qgs Qgd td (ON) tr td(OFF) tf Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VSD trr Qrr 17.6 8.8 1.4IS = 3A, VGS = 0V IF = 20A di/dt = 100A/µs Body-Diode PARAMETERS V ns nC Ω pF pF pF nC nC nC ns ns ns ns Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.3/7 UN0602N025-T52 N-Channel Enhancement Mode MOSFET ROHS Electrical Characteristics at TC = 25℃ unless otherwise specified Parameter Symbol Test Conditions STATIC PARAMETERS Min Typ Max Units Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-source leakage current Gate-Source Threshold Voltage Forward Transconductance ID = 250uA VDS=60V VGS=±20V VGS = VDS , ID = 250μA VGS = 10V , ID = 15A VGS = 4.5V , ID = 10A VDS = 5.0V , ID = 20A 1.2 1.0 ±100 2.5 BVDSS IDSS IGSS VGS (TH) gfs V μA nA V mΩ mΩ S Drain-Source On-State Resistance RDS (ON) VDS = 30V, VGS = 10V ID = 20A, RG = 3Ω Gate charge Total Qg VDS = 30V ID = 20A VGS = 10V VGS = 4.5V
N-Channel Enhancement Mode MOSFET Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.4/7 ROHS Electrical Characteristics Curves Fig. 6 Source-Drain Diode Forward VoltageFig. 5 Gate charge Characteristics Fig. 4 Capacitance CharacteristicFig. 3 On-Resistance VS Temperature Fig. 1 Transfer Characteristics Fig. 2 Output Characteristics
N-Channel Enhancement Mode MOSFET Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.5/7 ROHS Electrical Characteristics Curves Fig. 8 Single Pulse Maximum Power DissipationFig. 7 Safe Operating Area Fig. 9 Transient Thermal Response Curve
Revision March 1,2022 www.unsemi.com.tw ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.6/7 UN0602N025-T52 N-Channel Enhancement Mode MOSFET Test Circuit Diode Recovery Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Wav eforms Unclamped Inductive Switching (UIS) T est Circuit & Waveforms
Revision March 1,2022 www.unsemi.com.tw ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.7/7 UN0602N025-T52 N-Channel Enhancement Mode MOSFET W L1LL2 T I θ I 2ğ1 0.508 gauge plane TO-252 W L T θ Symbol Dimensions In Millimeters Dimensions In Inches Min MinMax Max 6.50 0.60 0.68 6.00 0.80 0.60 9.70 1.30 2.20 0.48 0.95 0.48 6.70 0.80 0.88 6.20 1.20 1.00 10.3 1.70 2.40 0.58 1.15 0.58 0.15 (4.57) (5.30) (5.20) 0.26 0.02 0.03 0.24 0.03 0.02 0.38 0.05 0.09 0.02 0.04 0.02 0.00 0.26 0.03 0.03 0.24 0.05 0.04 0.41 0.07 0.09 0.02 0.05 0.02 0.01 (0.18) (0.21) (0.20)
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Disclaimer ROHS UNSEMI RESERVES THE RIGHT TO MAKE CHANGE ON OUR PRODUTS , PRODUCTS SPECIFICATION AND DATA WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. UN SEMICONDUCTOR LIMITED its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “UNSEMI”)does not give any representations or warranties for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. In no event shall UNSEMI be liable for any indirect, incidental, punitive, special or consequential damages (including any and all implied warranties, warranties of fitness for particular purpose, non-infringement and merchantability.) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Statements regarding the suitability of products for certain types of applications are based on UNSEMI knowledge of typical requirements that are often placed on UNSEMI products in generic applications. Such statements are not binding, statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify UNSEMI's terms and conditions of purchase, including but not limited to the warranty expressed therein. Unless otherwise agreed in writing, UNSEMI product is not designed, authorized or warranted to be suitable for use in medical life-saving, or life-sustaining application , nor in applications where failure or malfunction of a UNSEMI product can reasonably be expected to result in personal injury, death or severe property or environmental damage. UNSEMI and its suppliers accept no liability for inclusion or use of UNSEMI products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. All referenced brands, product names, service names and trademarks are the property of their respective owners.