UN0412N2R0-PD56 UNSEMI | Alldatasheet
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Revision March 1,2022 www.unsemi.com.tw www.unsemi.com.tw Package Marking And Ordering information For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.1/8
Applications
N-Channel Enhancement Mode MOSFET VDS ID(@TA=25℃) RDS(ON) (@VGS=10V ID =20A) RDS(ON) (@VGS=6.0V ID =20A) 40V 125A ≤3.2mΩ ≤5.0mΩ Proprietary Trench Gate Device Design and Processes Low R DS(ON) 100% Avalanche Tested Reliable and Rugged RoHS complian DC/DC Converter Battery Management System Industrial and Motor Drive applications Synchronous rectifier applications Half-bridge and full-bridge topologies Part Number Package Type packaging Reel pcs UN0412N2R0-PD56 DFN5*6-8L Tape & Reel 5,000 DFN5*6-8L UN0412N XXXX Top View Bottom View D G S
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.2/8 ROHSROHS UN0412N2R0-PD56 N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings TC = 25℃ unless otherwise specified Parameter Symbol Maximum Units Drain to Source Voltage Drain Current Pulsed2) Gate-Source Voltage Single Pulsed Avalanche Energy 3) Junction and Storage Temperature Range VDs lDM VGS EAS Tstg,TJ 125 500 +20/-12 298 100 -55~150 V A V mJ Thermal Characteristics Parameter Symbol Max Units Thermal Resistance from Junction to Ambient Thermal Resistance, Junction to Case RθJA RθJC 1.25 Typ ℃/W ℃/W Continuous Drain Current 1) AID @TC=25℃ @TC=100℃ @TC=25℃ @TC=100℃ Notes: 1) The maximum current rating is silicon wafer limited. 2) Single pulse width limited by junction temperature . 3) Limited by TJ (MAX), Starting at TJ =25℃, Rg=25Ω, L=0.5mH. 4) Design parameters,Guaranteed by design, not subject to production. PDPower Dissipation W
VGS = 0V VDS = 20V F = 1MHz VGS = 10V VDS = 20V ID = 20A F = 1MHZ DYNAMIC PARAMETERS 4) SWITCHING PARAMETERS 4) 2.0 3821 1353 105 64.2 12.0 14.7 14.6 16.3 18.2 Ω pF pF pF nC nC nC ns ns ns ns RG Ciss Coss Crss Qg Qgs Qgd td (ON) tr td(OFF) tf Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Total Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VSD trr Qrr 0.7 1.1IS = 1A, VGS = 0V IF = 20A di/dt = 100A/µs Body-Diode PARAMETERS V ns nC Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.3/8 N-Channel Enhancement Mode MOSFET ROHS UN0412N2R0-PD56 Electrical Characteristics at TC = 25℃ unless otherwise specified Parameter Symbol Test Conditions STATIC PARAMETERS Min Typ Max Units Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-source leakage current Gate-Source Threshold Voltage Forward Transconductance (.1 VGS = 0V, ID = 250uA VDS=40V , VGS = 0V VGS=20V , VDS = 0V VGS = VDS , ID = 250μA VGS = 10V , ID = 20A VGS = 6.0V , ID = 20A VDS = 5.0V , ID = 25A 2.0 1.0 100 4.0 3.2 5.0 3.0 2.0 3.2 BVDSS IDSS IGSS VGS (TH) GFS V μA nA V mΩ mΩ S Drain-Source On-State Resistance RDS(ON) VDS = 20V, VGS = 10V RG = 1.5Ω
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.4/8 N-Channel Enhancement Mode MOSFET ROHS UN0412N2R0-PD56 Electrical Characteristics Curves Fig. 6 On-Resistance vs. Junction Temperature/ Normalized On-Resistance Fig. 5 On-Resistance vs. Drain Current and Gate Voltage Fig. 4 Transfer CharacteristicsFig. 3 Output Characteristics Fig. 1 Power Derating Fig. 2 Maximum Drain Current vs. Case Temperature
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.5/8 N-Channel Enhancement Mode MOSFET ROHS UN0412N2R0-PD56 Electrical Characteristics Curves Fig. 8 Body-Diode CharacteristicsFig. 7 On-Resistance vs. Gate-Source Voltage Fig. 10 Gate Charge CharacteristicsFig. 9 Capacitance Characteristics Fig. 11 Safe Operation Area
Revision March 1,2022 www.unsemi.com.tw N-Channel Enhancement Mode MOSFET ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.6/8 UN0412N2R0-PD56 Electrical Characteristics Curves Fig. 12 Normalized Maximum Transient thermal impedance
Revision March 1,2022 www.unsemi.com.tw N-Channel Enhancement Mode MOSFET ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.7/8 UN0412N2R0-PD56 Test Circuit Diode Recovery Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Wav eforms Unclamped Inductive Switching (UIS) T est Circuit & Waveforms
Revision March 1,2022 www.unsemi.com.tw N-Channel Enhancement Mode MOSFET ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.8/8 UN0412N2R0-PD56 DFN5*6-8L Package Outine & Dimensions (Units: mm / in) PDFN5*6-8L D E e L θ 1.000 0.005 0.250 0.350 4.800 5.000 3.910 5.650 5.950 3.375 0.530 0.0394 0.0001 0.0098 0.0138 0.1890 0.1969 0.1539 0.2224 0.2342 0.1329 0.0209 (0.254 BSC) (1.270 TYPE) (0.0100 BSC) (0.0500 TYPE)
1.00 REF
13° TYPE
1.235 REF
0.0394 REF
13° TYPE
0.0486 REF
1.100 0.300 0.400 4.900 5.100 4.010 5.750 6.050 3.475 0.630 0.0433 0.0118 0.0157 0.1929 0.2008 0.1579 0.2263 0.2381 0.1368 0.0248 Symbol Dimensions In Millimeters Dimensions In Inches Min MinMax Max
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Disclaimer ROHS UNSEMI RESERVES THE RIGHT TO MAKE CHANGE ON OUR PRODUTS , PRODUCTS SPECIFICATION AND DATA WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. UN SEMICONDUCTOR LIMITED its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “UNSEMI”)does not give any representations or warranties for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. In no event shall UNSEMI be liable for any indirect, incidental, punitive, special or consequential damages (including any and all implied warranties, warranties of fitness for particular purpose, non-infringement and merchantability.) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Statements regarding the suitability of products for certain types of applications are based on UNSEMI knowledge of typical requirements that are often placed on UNSEMI products in generic applications. Such statements are not binding, statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify UNSEMI's terms and conditions of purchase, including but not limited to the warranty expressed therein. Unless otherwise agreed in writing, UNSEMI product is not designed, authorized or warranted to be suitable for use in medical life-saving, or life-sustaining application , nor in applications where failure or malfunction of a UNSEMI product can reasonably be expected to result in personal injury, death or severe property or environmental damage. UNSEMI and its suppliers accept no liability for inclusion or use of UNSEMI products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. All referenced brands, product names, service names and trademarks are the property of their respective owners.