UN0401N8R5-S08 UNSEMI | Alldatasheet
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Revision March 1,2022 www.unsemi.com.tw www.unsemi.com.tw Package Marking And Ordering information For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.1/8
Applications
N-Channel Enhancement Mode MOSFET VDS ID(Ta=25℃) RDS(ON)(@VGS=10V ID=10A) RDS(ON)(@VGS=4.5V ID=10A) 40V 12A ≤13mΩ ≤18mΩ Propriet ary Trench G ate Device Design and Processes 100% Avalanc he Tested Reliable and Rugged RoHS compliant Power Management in Load S witch Motor control and drive Lithium battery protection General P urpose Part Number Package Type packaging Reel pcs UN0401N8R5-S08 SOP-8 Tape & Reel 3,000 SOP-8 XXXX UN0401N 1 2 3 4 8765 D G S S S S G D D D D Pin1
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.2/8 UN0401N8R5-S08 N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings TC = 25℃ unless otherwise specified Parameter Symbol Maximum Units Drain to Source Voltage Pulsed Drain Current 1) Gate-Source Voltage Single Pulsed Avalanche Energy 2) Junction and Storage Temperature Range VDs lDM VGS EAS Tstg,TJ 9.7 ±20 3.0 -55~150 V A V mJ Continuous Drain Current AID @TC=25℃ @TC=70℃ PDPower Dissipation W Thermal Characteristics Parameter Symbol Max Units Thermal Resistance from Junction to Ambient RθJA 41.5 Typ -- ℃/W Notes: 1) Single pulse width limited by junction temperature . 2) Limited by TJ (MAX), Starting at TJ =25℃, Rg=25Ω, L=0.5mH. 3) Design parameters,Guaranteed by design, not subject to production.
N-Channel Enhancement Mode MOSFET Revision March 1,2022 www.unsemi.com.tw ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.3/8 VGS = 0V VDS = 20V F = 1MHz VGS = 10V VDS = 20V ID = 10A VGS = 0V,VDS = 0V F = 1MHZ DYNAMIC PARAMETERS 3) SWITCHING PARAMETERS 3) 3.7 667 123 117 33.8 4.5 6.7 10.4 17.2 29.5 21.0 Ω pF pF pF nC nC nC ns ns ns ns RG Ciss Coss Crss Qg Qgs Qgd td (ON) tr td(OFF) tf Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Total Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VSD trr Qrr 0.75 13.2 1.1IS = 1A, VGS = 0V IF = 10A di/dt = 100A/µs Body-Diode PARAMETERS V ns nC Electrical Characteristics at TC = 25℃ unless otherwise specified Parameter Symbol Test Conditions STATIC PARAMETERS Min Typ Max Units Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-source leakage current Gate-Source Threshold Voltage Forward Transconductance(GMP) VGS = 0V, ID = 250uA VDS=40V , VGS = 0V VGS=±20V , VDS = 0V VGS = VDS , ID = 250μA VGS = 10V , ID = 10A VGS = 4.5V , ID = 10A VDS = 5.0V , ID = 10A 1.0 1.0 ±100 2.5 8.5 12.0 BVDSS IDSS IGSS VGS (TH) GFS V μA nA V mΩ mΩ S Drain-Source On-State Resistance RDS(ON) VDS = 20V, VGS = 10V RG = 2.7Ω
N-Channel Enhancement Mode MOSFET Revision March 1,2022 www.unsemi.com.tw ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.4/8 Electrical Characteristics Curves Fig. 6 On-Resistance vs. Junction Temperature/ Normalized On-Resistance Fig. 5 On-Resistance vs. Drain Current and Gate Voltage Fig. 4 Transfer CharacteristicsFig. 3 Output Characteristics Fig. 1 Power Derating Fig. 2 Maximum Drain Current vs. Case Temperature
N-Channel Enhancement Mode MOSFET Revision March 1,2022 www.unsemi.com.tw ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.5/8 Electrical Characteristics Curves Fig. 8 Body-Diode CharacteristicsFig. 7 On-Resistance vs. Gate-Source Voltage Fig. 10 Gate Charge CharacteristicsFig. 9 Capacitance Characteristics Fig. 11 Safe Operation Area
N-Channel Enhancement Mode MOSFET Revision March 1,2022 www.unsemi.com.tw ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.6/8 Electrical Characteristics Curves Fig. 12 Normalized Maximum Transient thermal impedance
N-Channel Enhancement Mode MOSFET Revision March 1,2022 www.unsemi.com.tw ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.7/8 Test Circuit Fig.1-1 Switching times test circuit Fig.1-2 Switching Waveform Fig.2-1 Gate charge test circuit Fig.2-2 Gate charge waveform Fig.3-1 Avalanche test circuit Fig.3-2 Avalanche waveform
N-Channel Enhancement Mode MOSFET Revision March 1,2022 www.unsemi.com.tw ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.8/8 Symbol Min. Max. InchesMillimeters A B C D G H J K M N S 4.80 3.80 1.35 0.35 0.10 0.19 0.40 0.25 5.80 5.00 4.00 1.75 0.51 0.25 0.25 1.27 0.50 6.20 Min. Max. 0.189 0.150 0.053 0.013 0.004 0.007 0.016 0.010 0.228 0.197 0.157 0.069 0.020 0.010 0.010 0.050 0.020 0.244 1.27BSC 0.050BSC Soldering Footprint
Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Disclaimer ROHS UNSEMI RESERVES THE RIGHT TO MAKE CHANGE ON OUR PRODUTS , PRODUCTS SPECIFICATION AND DATA WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. UN SEMICONDUCTOR LIMITED its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “UNSEMI”)does not give any representations or warranties for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. In no event shall UNSEMI be liable for any indirect, incidental, punitive, special or consequential damages (including any and all implied warranties, warranties of fitness for particular purpose, non-infringement and merchantability.) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Statements regarding the suitability of products for certain types of applications are based on UNSEMI knowledge of typical requirements that are often placed on UNSEMI products in generic applications. Such statements are not binding, statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify UNSEMI's terms and conditions of purchase, including but not limited to the warranty expressed therein. Unless otherwise agreed in writing, UNSEMI product is not designed, authorized or warranted to be suitable for use in medical life-saving, or life-sustaining application , nor in applications where failure or malfunction of a UNSEMI product can reasonably be expected to result in personal injury, death or severe property or environmental damage. UNSEMI and its suppliers accept no liability for inclusion or use of UNSEMI products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. All referenced brands, product names, service names and trademarks are the property of their respective owners.