UN010N88DE UNSEMI | Alldatasheet

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RDS(ON) (@VGS=10V ID =0.25A) RDS(ON) (@VGS=4.5V ID =0.2A) 100V 0.28A ≤6Ω ≤10Ω  Advanced Trench Process Technology  Low Threshold Voltage  Fast Switching Speed  Halogen-Free & Lead-Free  Load Switch for Portable Devices  Voltage C ontrolled Small Signal Switch DFN1006-3L B23D G S

Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.2/8 UN010N88DE N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings TA = 25℃ unless otherwise specified Noteğ 1) Part mounted on FR-4 board with recommended pad layout. 2) Pulse width ≤300 μs, Duty cycle ≤2%, limited by Tjmax. Parameter Symbol Maximum Units Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Drain Current, Pulsed 2) Power Dissipation1) Operating Junction Storage Temperature Range VDS VGS lD lDM P tot TJ Tstg 100 ±20 0.28 1.8 0.71 -55~150 -55~150 V V A A W Thermal Characteristics Parameter Symbol Max Units Thermal Resistance from Junction to Ambient1) RθJA 175 ℃/W

Revision March 1,2022 www.unsemi.com.tw N-Channel Enhancement Mode MOSFET ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.3/8 UN010N88DE Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge total Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time gts Ciss Coss Crss Qg Qgs Qgd td (ON) tr td(OFF) tf VGS = 0V, VDS = 25V F = 1MHz VDD = 30V, VGS = 10V ID = 0.28A, RGEN = 50Ω VDS = 48V, VGS = 10V IDS = 0.5A 370 3.5 2.0 7.0 1.4 2.5 DYNAMIC PARAMETERS VDS = 15V, ID = 3.2A S pF pF pF nC nC nC ns ns ns ns Electrical Characteristics at TA = 25℃ unless otherwise specified Parameter Symbol Test Conditions STATIC PARAMETERS Body-Diode PARAMETERS Min Typ Max Units Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Leakage Current Gate-Source Threshold Voltage Drain-Source On-State Resistance Drain-Source Diode Forward Voltage VSD 1.3IS = 0.34A, VGS = 0V ID = 250μA VGS=0V , VDS = 80V VGS=±20V VGS = VDS , ID = 1mA VGS = 10V , ID = 0.25A VGS = 4.5V , ID = 0.2A 100 0.8 1.0 ±10 2.0 6.0 3.2 3.8 BVDSS IDSS IGSS VGS (TH) RDS(ON) V μA μA V Ω Ω V 8.0 8.0

Revision March 1,2022 www.unsemi.com.tw N-Channel Enhancement Mode MOSFET ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.4/8 UN010N88DE Electrical Characteristics Curves Fig. 2 Transfer CharacteristicFig. 1 Output Characteristics Fig. 4 RDS(ON) — VGSFig. 3 RDS(ON) — ID and VGS Fig. 6 Normalized RDS(ON) — TJFig. 5 RDS(ON) — ID and TJ

Revision March 1,2022 www.unsemi.com.tw N-Channel Enhancement Mode MOSFET ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.5/8 UN010N88DE Electrical Characteristics Curves Fig. 8 VGS(TH) — TJ Fig. 7 RDS(ON) — TJ Fig. 10 Typical Junction CapacitanceFig. 9 IS — VSD Fig. 11 Gate Charge Fig. 10 Typical Junction Capacitance

Revision March 1,2022 www.unsemi.com.tw N-Channel Enhancement Mode MOSFET ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.6/8 UN010N88DE Electrical Characteristics Curves Fig. 12 Transient Thermal Resistance

Revision March 1,2022 www.unsemi.com.tw N-Channel Enhancement Mode MOSFET ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.7/8 UN010N88DE Test Circuit Fig.1-2 Switching WaveformFig.1-1 Switching times test circuit Fig.2-2 Gate charge waveformFig.2-1 Gate charge test circuit Fig.3-2 Avalanche waveformFig.3-1 Avalanche test circuit

Revision March 1,2022 www.unsemi.com.tw N-Channel Enhancement Mode MOSFET ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.8/8 UN010N88DE Revision March 1,2022 www.unsemi.com.tw N-Channel Enhancement Mode MOSFET ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.8/8 UN010N88DE Symbol Min. Millimeters A b c D e E L 0.45 0.45 0.10 0.12 0.95 0.55 0.15 0.20 0.65BSC 0.05REF Nom 0.50 0.02 0.50 0.15 0.15 1.00 0.60 0.20 0.25 Max. 0.55 0.05 0.55 0.20 0.18 1.05 0.65 0.25 0.30 DIMENSIONS DIM INCHES MILLIMETERS C G P X Y Z (0.033) 0.012 0.014 0.008 0.024 0.022 0.055 (0.85) 0.30 0.35 0.20 0.60 0.55 1.40 Symbol Min. Millimeters A b c D e E L 0.45 0.45 0.10 0.12 0.95 0.55 0.15 0.20 0.65BSC 0.05REF Nom 0.50 0.02 0.50 0.15 0.15 1.00 0.60 0.20 0.25 Max. 0.55 0.05 0.55 0.20 0.18 1.05 0.65 0.25 0.30 DIMENSIONS DIM INCHES MILLIMETERS C G P X Y Z (0.033) 0.012 0.014 0.008 0.024 0.022 0.055 (0.85) 0.30 0.35 0.20 0.60 0.55 1.40

Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Disclaimer ROHS UNSEMI RESERVES THE RIGHT TO MAKE CHANGE ON OUR PRODUTS , PRODUCTS SPECIFICATION AND DATA WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. UN SEMICONDUCTOR LIMITED its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “UNSEMI”)does not give any representations or warranties for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. In no event shall UNSEMI be liable for any indirect, incidental, punitive, special or consequential damages (including any and all implied warranties, warranties of fitness for particular purpose, non-infringement and merchantability.) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Statements regarding the suitability of products for certain types of applications are based on UNSEMI knowledge of typical requirements that are often placed on UNSEMI products in generic applications. Such statements are not binding, statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify UNSEMI's terms and conditions of purchase, including but not limited to the warranty expressed therein. Unless otherwise agreed in writing, UNSEMI product is not designed, authorized or warranted to be suitable for use in medical life-saving, or life-sustaining application , nor in applications where failure or malfunction of a UNSEMI product can reasonably be expected to result in personal injury, death or severe property or environmental damage. UNSEMI and its suppliers accept no liability for inclusion or use of UNSEMI products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. All referenced brands, product names, service names and trademarks are the property of their respective owners.