Microsoft Word - UMX1N_SOT-363_Dual-Ch_R,C,vA_.doc

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  • Manufacturer or author: Chris
  • PDF pages: 3

Technical content

Dual NPN General Purpose Transistors Elektronische Bauelemente 12-Jul-2010 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

 Two 2SC2412K chips in a package.  Mounting possible with SOT-363 automatic mounting machines.  Transistor elements are independent, eliminating interference.  Mounting cost and area can be cut in half. EQUIVALENT CIRCUIT MARKING：X1 ABSOLUTE MAXIMUM RA TINGS at Ta = 25°C Parameter Symbol Value Unit Collector-base voltage V(BR)CBO 60 V Collector-emitter voltage V(BR)CEO 50 V Emitter-base voltage V(BR)EBO 7 V Collector current IC 150 mA Collector Power dissipation PC 150 mW Junction & Storage temperature T J, TSTG 150, -55 ~ 150 ℃ ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V (BR)CBO 60 - - V IC= 50A, IE=0 Collector-emitter breakdown voltage V (BR)CEO 50 - - I C= 1mA , IB= 0 Emitter-base breakdown voltage V (BR)EBO 7 - - V I E= 50A , IC= 0 Collector cut-off current ICBO - - 0.1 A V CB= 60V, IE=0 Emitter cut-off current IEBO - - 0.1 A V EB= 7V, IC= 0 DC current gain hFE 120 - 560 V CE= 6V, IC= 1mA Collector-emitter saturation voltage V CE(sat) - - 0.4 V I C= 50mA, IB= 5mA Transition frequency fT - 180 - MHz VCE= 12V, IC= 2mA, f=100MHz Collector output capacitance Cob - 2.0 3.5 pF V CB= 12V, IE= 0, f=1MHz REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.00 2.20 G 0.100 REF. B 2.15 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.15 D 0.90 1.10 K 8° E 1.20 1.40 L 0.650 TYP. F 0.15 0.35 SOT-363 B L F HC JD G K A E 1 2 3 6 5 4 (3) (2) (1) (4) (6)(5) Tr2 Tr1

Dual NPN General Purpose Transistors Elektronische Bauelemente 12-Jul-2010 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE

Dual NPN General Purpose Transistors Elektronische Bauelemente 12-Jul-2010 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE