UMX18N_15 SECOS | Alldatasheet
Document overview
- Manufacturer or author: Janice
- PDF pages: 2
Technical content
General Purpose Transistors (dual transistors) 15-July-2009 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
z Two chips in a package. z Mounting possible with SOT-363 automatic mounting machines. z Transistor elements are independent, eliminating interference. z Mounting cost and area be cut in half. MARKING X 1 8 NPN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage V CBO 15 V Collector-Emitter Voltage V CEO 12 V Emitter-Base Voltage V EBO 6 V Collector Current I C 0.5 A Collector Power Dissipation P C 0.15 W Junction & Storage temperature T J, TSTG 150, -55 ~ 150 °C NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage V (BR)CBO 15 - - V I C=10μA, IE=0 Collector-Emitter Breakdown Voltage V (BR)CEO 12 - - V I C=1mA, IB=0 Emitter-Base Breakdown Voltage V (BR)EBO 6 - - V I E=10μA, IC=0 Collector Cut-Off Current I CBO - - 100 nA V CB=15V, IE=0 Emitter Cut-off Current IEBO 100 nA V EB=6V, IC=0 DC Current Gain h FE 270 - 680 V CE=2V, IC=10mA Collector-Emitter Saturation Voltage V CE(sat) - - 0.25 V I C=200mA, IB=10mA Transition Frequency f T - 320 - MHz V CE=2V, IE=-10mA, f=100MHz Collector Output Capacitance C OB - 7.5 - pF V CB=10V, IE=0, f=1MHz C B E E B C A 2.00 2.20 G 0.100 REF. B 2.15 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.15 D 0.90 1.10 K 8° E 1.20 1.40 L 0.650 TYP. F 0.15 0.35 SOT-363 B L F HC JD G K A E
General Purpose Transistors (dual transistors) 15-July-2009 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS UMX18N