UMT6

EMF20 ROHM | Alldatasheet

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Power management (dual transistors) EMF20/UMF20N 2SC4617and DTC144E are housed independently in a EMT6 or UMT6 package. zApplication Power management circuit zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. zStructure Silicon epitaxial planar transistor zEquivalent circuits R 1 R 2 DTr2 Tr1 (1)(2)(3) (4) (5) (6) R1=47kΩ R2=47kΩ zExternal dimensions (Units : mm) ROHM : EMT6 EMF20 ROHM : UMT6 EIAJ : SC-88 UMF20N Abbreviated symbol :F20 Abbreviated symbol : F20 0.22 1.2 1.6 (1) (2)(5) (3) (6) (4) 0.13 0.5 0.50.5 1.0 1.6 Each lead has same dimensions Each lead has same dimensions 0∼0.1 (6) 2.0 1.30.9 0.15 0.7 0.1Min. 2.1 0.65 0.2 1.25 (1) 0.65 (4) (3) (2) (5) zPackage, marking, and packaging specifications Type EMF20 EMT6 F20 T2R 8000 Package Marking Code Basic ordering unit (pieces) UMF20N UMT6 F20 TR 3000

zAbsolute maximum ratings (Ta=25°C) Tr1 Parameter Symbol Limits Unit VCBO 60 V 50 V V VCEO VEBO 7 IC mA150 Tj 150 Tstg −55 to +150 PC 150 (TOTAL) mW ∗ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Power dissipation ∗ 120mW per element must not be exceeded. C C DTr2 Parameter ∗1 Characteristics of built-in transistor. ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Symbol VCC VIN IC IO PC Tj Tstg Limits −10~+40 100 150(TOTAL) 150 −55 to +150 Unit V V mA mA mW Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature C C zElectrical characteristics (Ta=25°C) Tr1 Parameter Symbol BV CBO BV CEO BV EBO ICBO IEBO hFE VCE (sat) Cob Min. 180 0.1 0.1 390 0.4 3.5 VI C =50µA IC =1mA IE=50µA VCB =60V VEB =7V VCE =6V, IC =1mA IC /IB=50mA/5mA V V µA µA V PF Typ. Max. Unit Conditions fT − 180 − VCE =12V, IE=−2mA, f=100MHz VCB =12V, IE=0A, f=1MHz MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Collector-emitter saturation voltage Output capacitance DTr2 Parameter Symbol Min. Typ. Max. Unit Conditions ∗Transition frequency fT − 250 − MHz VCE =10V, IE=−5mA, f=100MHz ∗Characteristics of built-in transistor. VI(off) −− 0.5 V VCC =5V, IO =100µAInput voltage VI(on) 3.0 −− V VO =0.3V, IO =2mA VO(on) − 100 300 mV VO =10mA, II=0.5mAOutput voltage II −− 180 µAV I=5VInput current IO(off) −− 500 nA V CC =50V, VI=0VOutput current R 1 32.9 47 61.1 k Ω −Input resistance G I 20 −− − VO =5V, IO =5mADC current gain −R 2/R1 0.8 1.0 1.2 −Resistance ratio

zElectrical characteristic curves Tr1 0.1 0.2 0.5 VCE =6V COLLECTOR CURRENT : I C (mA) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 25˚C−55˚C Ta=100˚C 100 COLLECTOR CURRENT : I C (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 0.05mA 0.10mA 0.15mA 0.25mA 0.30mA 0.35mA 0.20mA Ta=25˚C IB=0A 0.40mA 0.50mA 0.45mA Fig.2 Grounded emitter output characteristics ( I ) 4 8 12 16 IB=0A Ta=25˚C COLLECTOR CURRENT : I C (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 3µA 6µA 9µA 12µA 15µA 18µA 21µA 24µA 27µA 30µA Fig.3 Grounded emitter output characteristics ( II ) 0.2 0.5 1 2 5 10 20 50 100 200 100 200 500 VCE =5V Ta=25˚C DC CURRENT GAIN : hFE COLLECTOR CURRENT : I C (mA) Fig.4 DC current gain vs. collector current ( I ) 0.2 0.5 1 2 5 10 20 50 100 200 100 200 500 25˚C −55˚C Ta=100˚C VCE =5V DC CURRENT GAIN : hFE COLLECTOR CURRENT : I C (mA) Fig.5 DC current gain vs. collector current ( II ) 0.2 0.5 1 2 5 10 20 50 100 200 0.01 0.02 0.05 0.1 0.2 0.5 IC /IB=50 Ta=25˚C COLLECTOR SATURATION VOLTAGE : V CE (sat) (V) COLLECTOR CURRENT : I C (mA) Fig.6 Collector-emitter saturation voltage vs. collector current 0.2 COLLECTOR SATURATION VOLTAGE : V CE (sat) (V) COLLECTOR CURRENT : I C (mA) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 IC /IB=50 Ta=25˚C Fig.7 Collector-emitter saturation voltage vs. collector current ( I ) 0.2 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : I C (mA) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 IC /IB=10 Ta=100˚C 25˚C −55˚C Fig.8 Collector-emitter saturation voltage vs. collector current ( II ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : I C (mA) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 IC /IB=50 Ta=100˚C 25˚C −55˚C Fig.9 Collector-emitter saturation voltage vs. collector current ( III )

Ta=25˚C VCE =6V EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz) Fig.10 Gain bandwidth product vs. emitter current 0.2 0.5 1 2 5 10 20 50 Cib Cob COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Fig.11 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Ta=25˚C f=1MHz IE=0A IC =0A 100 200 EMITTER CURRENT : IE (mA) Fig.12 Base-collector time constant vs. emitter current BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps) Ta=25˚C f=32MH Z VCB =6V DTr2 VO =0.3V 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 100 500m 200m 100m INPUT VOLTAGE : VI(on) (V) OUTPUT CURRENT : IO (A) Fig.9 Input voltage vs. output current (ON characteristics) 25°C 100°C Ta=−40°C VCC =5V 10m 500µ 200µ 100µ 50µ 20µ 10µ INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : Io (A) Fig.10 Output current vs. input voltage (OFF characteristics) Ta=100°C 25°C −40°C OUTPUT CURRENT : IO (A) DC CURRENT GAIN : GI VO =5V 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 500 200 100 Fig.11 DC current gain vs. output current Ta=100°C 25°C −40°C 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 500m 200m 100m 50m 20m 10m lO /lI=20 OUTPUT CURRENT : IO (A) OUTPUT VOLTAGE : V O(on) (V) Fig.12 Output voltage vs. output current Ta=100°C 25°C −40°C

Appendix1-Rev1.0 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.