UMT3906_1 ROHM | Alldatasheet
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Rev.B 1/4 PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 zFeatures 1) BVCEO > −40V (IC= −1mA) 2) Complements the T3904/SST3904/MMST3909. 3) Low capacitance. zPackage, marking, and packaging specifications zAbsolute maximum ratings (Ta=25°C) zDimensions (Unit : mm) UMT3906 SST3906 MMST3906 ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector ROHM : SST3 (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector zElectrical characteristics (Ta=25°C) Parameter Symbol BVCBO BVCEO BVEBO Min. Max.Typ. −40 −40 −50 −50 −0.25 −0.85 −0.95 −0.4 −0.65 Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Emitter cutoff current I CES IEBO Collector cutoff current Emitter input capacitance Delay time Rise time Storage tiem Fall time Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) DC current transfer ratio Transition frequency Collector output capacitance hFE Cob Cib fT 250 4.5 225 100 300 td tr tstg tf V V V V V nA nA MHz pF pF ns ns ns ns I C= −10µA IC= −1mA IE= −10µA VCB= −30V VEB= −3V VCE= −1V, IC= −0.1mA VCE= −1V, IC= −1mA VCE= −1V, IC= −10mA VCE= −1V, IC= −50mA VCE= −1V, IC= −100mA VCE= −20V, IE=10mA, f=100MHz VCB= −10V, f=100kHz, IE=0A VCB= −0.5V, f=100kHz, IC=0A VCC= −3V, VBE(OFF)= −0.5V,IC= −10mA, IB1= −1mA VCC= −3V, VBE(OFF)= −0.5V,IC= −10mA, IB1= −1mA VCC= −3V, IC= −10mA, IB1= −IB2= −1mA VCC= −3V, IC= −10mA, IB1= −IB2= −1mA IC/IB= −10mA/ −1mA IC/IB= −10mA/ −1mA IC/IB= −50mA/ −5mA IC/IB= −50mA/ −5mA Type UMT3906 UMT3 R2A T106 3000 SST3906 SST3 R2A T116 3000 MMST3906 SMT3 R2A T146 3000 Packaging type Marking Code Basic ordering unit (pieces) Parameter Symbol VCBO VCEO VEBO Pd Tj Tstg Limits −40 −40 6.2 0.35 SST3906,MMST3906 SST3906,MMST3906 UMT3906 150 −55 to +150 Unit V V V Collector-base voltage Collector-emitter voltage Emitter-base voltage I O −0.2Collector current Collector Power dissipation Junction temperature Storage temperature A W ∗ When mounted on a 7 5 0.6mm ceramic board.+ +
Rev.B 2/4 zElectrical characteristics curves 200 10 IB=0µA 4550 Ta=25°C IC-COLLECTOR CURRENT (mA) VCE-COLLECTOR-EMITTER VOLTAGE (V) Fig.1 Grounded emitter output characteristics 0.1 1.0 10 100 0.2 0.3 0.1 VCE(sat)COLLECTOR EMITTER SATURATION VOLTAGE (V) IC EMITTER COLLECTOR CURRENT (mA) Fig.2 Collector-emitter saturation voltage vs. collector current IC / IB=10 Ta=25°C 0.1 10 1.0 100 1000 100 500 hFE-DC CURRENT GAIN IC-COLLECTOR CURRENT (mA) Fig.3 DC current gain vs.collector current ( Ι ) Ta=25°C VCE=5V 0.1 10 1.0 100 1000 100 500 hFE-DC CURRENT GAIN IC-COLLECTOR CURRENT (mA) Fig.4 DC current gain vs. collector current ( ΙΙ ) VCE=5V Ta=125°C Ta=25°C Ta= −55°C
Rev.B 3/4 0.01 1.0 0.1 10 100 100 500 hFE-AC CURRENT GAIN IC-COLLECTOR CURRENT (mA) Fig.5 AC current gain vs. collector current Ta=25°C VCE=5V f=1kHz 0.1 1.0 10 100 0.8 1.2 1.8 1.6 0.4 0.6 1.0 1.4 0.2 VBE(SAT)BASE EMITTER SATURATION VOLTAGE (V) IC-COLLECTOR CURRENT (mA) Fig.6 Base-emitter saturation voltage vs. collector current IC / IB=10 Ta=25°C 0.1 1.0 10 100 0.8 1.2 1.8 1.6 0.4 0.6 1.0 1.4 0.2 VBE(ON)-BASE EMITTER ON VOLTAGE (V) IC-COLLECTOR CURRENT (mA) Fig.7 Grounded emitter propagation characteristics VCE=5V Ta=25°C Ta=25°C IC / IB=10 1.0 10 100 100 1000 10ton-TURN ON TIME (ns) IC-COLLECTOR CURRENT (mA) Fig.8 Turn-on time vs. collector current VCC=3V 15V 40V 1.0 10 100 100 1000 10tr-RISE TIME (ns) IC-COLLECTOR CURRENT (mA) Fig.9 Rise time vs. collector current Ta=25°C IC / =IB=10 1.0 10 100 100 1000 10 tS-STORAGE TIME (ns) IC-COLLECTOR CURRENT (mA) Fig.10 Storage time vs. collector current IC=101B1=101B2 Ta=25°C VCC=3V 40V 15V 1.0 10 100 100 1000 10 tf-FALL TIME (ns) IC-COLLECTOR CURRENT (mA) Fig.11 Fall time vs. collector current IC=101B1=101B2 Ta=25°C 0.1 1 10 100 0.5 CAPACITANCE (pF) REVERSE BIAS VOLTAGE (V) Fig.12 Input / output capacitance vs. voltage f=1MHz Ta=25°C Cib Cob
Rev.B 4/4 0.1 1 10 100 1.0 100
0.1 VCE COLLECTOR-EMITTER VOLTAGE (V)
IC-COLLECTOR CURRENT (mA) Fig.13 Gain bandwidth product Ta=25°C 100MHz 200MHz 200MHz 100MHz 300MHz 400MHz 300MHz 1 10 100 100 1000 fT-CORRENT GAIN-BANDWIDTH PRODUCT (MHz) IC-COLLECTOR CURRENT (mA) Fig.14 Gain bandwidth product vs. collector current VCE=5V Ta=25°C IC=1mA hie=4.08k Ω hfe=146 hre=2.20 10 hoe=34.3µS VCE=5V f=270Hz Ta=25 0.1 1 10 100 100 0.1 h-PARAMETER NORMALIZED TO 1mA IC-COLLECTOR CURRENT (mA) Fig.15 h parameter vs. collector current hfe hoe hie hre 10 1k 100 10k 100k NF-NOISE FIGURE (dB) f-FREQUENCY (Hz) Fig.16 Noise vs. collector current Ta=25°C VCE=5V IC=100µA RS=10kΩ VCB=25V 0 7525 50 100 125 150 100n 10n 10µ 0.1nICBO-COLLECTOR CUTOFF CURRENT (A) TA-AMBIENT TEMPERATURE (°C) Fig.17 Noise characteristics ( Ι ) 0.01 0.1 1 10 10k 100k
100 RS-SOURCE RESISTANCE (Ω)
IC-COLLECTOR CURRENT (mA) Fig.18 Noise characteristics ( ΙΙ ) Ta=25°C VCE=5V f=10kHz 12dB 8dB 8dB 12dB 3dB 3dB 5dB 5dB NF=1dB NF=1dB 0.01 0.1 1 10 10k 100k IC-COLLECTOR CURRENT (mA) Fig.19 Noise characteristics (ΙΙΙ) Ta=25°C VCE=5V f=30Hz 12dB8dB 8dB 3dB 3dB 5dB 5dB NF=1dB NF=1dB 0.01 0.1 1 10 10k 100k IC-COLLECTOR CURRENT (mA) Ta=25°C VCE=5V f=10Hz 8dB 8dB 3dB 5dB 5dB NF=3dB NF=12dB Fig.20 Noise characteristics ( )ΙΛ
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