UMT3904

UMT3904 ROHM | Alldatasheet

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UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 !!!!Features 1) BVCEO > 40V (IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906 / 2N3906. !!!!Package, marking and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) UMT3904 UMT3 R1A T106 3000 SST3904 SST3 R1A T116 3000 MMST3904 SMT3 R1A T146 3000 TO-92 T93 3000 2N3904 !!!!Absolute maximum ratings (Ta = 25°C) 2N3904 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO VCEO VEBO IC Tj Tstg Limits 0.2 0.35 150 −55~+150 Unit V V V A W W W PC 0.2 0.625 * When mounted on a 7 x 5 x 0.6 mm ceramic board. SST3904, MMST3904 UMT3904, SST3904, MMST3904 !!!!External dimensions (Units : mm) UMT3904 SST3904 MMST3904 2N3904 0~0.1 0.2Min. 2.4±0.2 1.3 0.95 0.45±0.1 0.15 0.4 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 −0.1 −0.1 +0.2 +0.1 −0.06 +0.1 −0.05 (2)(1) (3) 0~0.1 2.8±0.2 1.6 0.3~0.6 1.1 0.8±0.1 0.15 0.4 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 −0.1 −0.1 +0.2 +0.1 −0.06 +0.1 −0.05 (2)(1) (3) 0~0.1 (2)(1) (3) 0.1~0.4 2.1±0.1 1.25±0.1 0.9±0.1 0.2 0.7±0.1 0.15±0.050.3 2.0±0.2 1.3±0.1 0.65 0.65 +0.1 4.8±0.2(12.7Min.) 4.8±0.2 3.7±0.2 5 0.45±0.1 2.3 0.5 +0.15 −0.05 2.5 +0.3 −0.1 (1) (2) (3) All terminals have same dimensions All terminals have same dimensions All terminals have same dimensions ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector ROHM : SST3 (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector ROHM : TO-92 EIAJ : SC-43 (1) Emitter (2) Base (3) Collector 2.5Min. !!!!Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BV CBO BVCEO BVEBO ICES IEBO V V V nA nA I C = 10µA IC = 1mA IE = 10µA VCB = 30V VEB = 3V - - 0.95Base-emitter saturation voltage V BE(sat) 0.65 - 0.85 V - - 0.3 I C/IB = 50mA/5mACollector-emitter saturation voltage V CE(sat) - - 0.2 V IC/IB = 10mA/1mA IC/IB = 50mA/5mA IC/IB = 10mA/1mA 30 - - 60 - - DC current transfer ratio h FE 100 - 300 - 70 - - 40 - - V CE = 1V , IC = 0.1mA VCE = 1V , IC = 1mA VCE = 1V , IC = 10mA VCE = 1V , IC = 50mA VCE = 1V , IC = 100mA Transition frequency Collector output capacitance fT Cob 300 MHz pF VCE = 20V , IE = −10mA, f = 100MHz VCB = 10V , f = 100kHz Emitter input capacitance Cib - - 8 pF VEB = 0.5V , f = 100kHz Delay time td - - 35 ns VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mARise time tr - - 35 ns Storage time tstg - - 200 ns VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA Fall time tf - - 50 ns

UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors !Electrical characteristic curves 200 10 IB=0µA 5.0 Ta=25°C COLLECTOR CURRENT : IC (mA) COLLECTOR-EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter output characteristics 0.1 1.0 10 100 0.2 0.3 0.1 COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) Fig.2 Collector-emitter saturation voltage vs. collector current Ta=25°C IC / IB=10 0.1 10 1.0 100 1000 100 500 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current ( Ι ) Ta=25°C VCE=1V 10V5V3V 0.1 10 1.0 100 1000 100 500 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ΙΙ ) VCE=5V Ta=125°C Ta=25°C Ta=−55°C

UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors 0.01 1.0 0.1 10 100 100 500 AC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.5 AC current gain vs. collector current Ta=25°C VCE=5V f=1kHz 0.1 1.0 10 100 0.8 1.2 1.8 1.6 0.4 BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR CURRENT : IC (mA) Fig.6 Base-emitter saturation voltage vs. collector current Ta=25°C IC / IB=10 0.1 1.0 10 100 0.8 1.2 1.8 1.6 0.4 BASE EMITTER VOLTAGE : VBE(ON) (V) COLLECTOR CURRENT : IC (mA) Fig.7 Grounded emitter propagation characteristics Ta=25°C VCE=5V 1.0 10 100 100 1000

10 TURN ON TIME : ton (ns)

COLLECTOR CURRENT : IC (mA) Fig.8 Turn-on time vs. collector current Ta=25°C IC / IB=10 VCC=3V 15V 40V 1.0 10 100 100 1000

10 RISE TIME : tr ( ns)

COLLECTOR CURRENT : IC (mA) Fig.9 Rise time vs. collector current Ta=25°C IC / IB=10 VCC=40V Ta=25°C IC=10IB1=10IB2 1.0 10 100 100 1000

10 STORAGE TIME : ts (ns)

COLLECTOR CURRENT : IC (mA) Fig.10 Storage time vs. collector current VCE=3V 40V 15V 1.0 10 100 100 1000

10 FALL TIME : tf (ns)

COLLECTOR CURRENT : IC (mA) Fig.11 Fall time vs. collector current Ta=25°C VCC=40V IC/IB=10 0.1 1.0 10 100 0.5 CAPACITANCE (pF) REVERSE BIAS VOLTAGE (V) Fig.12 Input / output capacitance vs. voltage Ta=25°C f=1MHz Cib Cob

UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors 0.1 1.0 10 100 1.0 100 0.1COLLECTOR-EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.13 Gain bandwidth product Ta=25°C 100MHz 200MHz 400MHz

300 MHz

1.0 10 100 100 1000 CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) COLLECTOR CURRENT : IC (mA) Fig.14 Gain bandwidth product vs. collector current Ta=25°C VCE=5V 0.1 1 10 100 100 0.1h PARAMETER NORMALIZED TO 1mA COLLECTOR CURRENT : IC (mA) Fig.15 h parameter vs. collector current VCE=5V f=270Hz hfe hoe hie hre Ta=25°C IC=1mA hie=3.84kΩ hfe=141 hre=5.03 × 10 hoe=5.58µS 0 7525 50 100 125 150 100n 10n 10µ 0.1nCOLLECTOR CUTOFF CURRENT : ICBO (A) ANBIENT TEMPERATURE : Ta (°C) Fig.16 Noise characteristics ( Ι ) VCB=25V 0.01 0.1 1 10 10k 100k

100 SOURCE RESISTANCE : RS (Ω)

COLLECTOR CURRENT : IC (mA) Fig.17 Noise characteristics ( ΙΙ ) Ta=25°C VCE=5V f=10kHz12dB 8dB 8.0dB 3dB 1.0dB 3.0dB 5dB 5.0dB NF=1.0dB 0.01 0.1 1 10 10k 100k COLLECTOR CURRENT : IC (mA) Fig.18 Noise characteristics ( ΙΙΙ ) Ta=25°C VCE=5V f=1kHz12dB 8dB 8.0dB 3dB 1.0dB 3.0dB 5dB 5.0dB NF=1.0dB 0.01 0.1 1 10 10k 100k COLLECTOR CURRENT : IC (mA) Fig.19 Noise characteristics ( ΙV ) Ta=25°C VCE=5V f=10Hz 12dB 8dB 8.0dB 3dB 5dB 5.0dB NF=3.0dB 10 1k 100 10k 100k NOISE FIGURE : NF (dB) FREQUENCY : f (Hz) Fig.20 Noise vs. collector current Ta=25°C VCE=5V IC=100µA RS=10kΩ