UMT1N SECOS | Alldatasheet
Document overview
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Technical content
-0.15A , -60V Dual PNP General Purpose Transistors Elektronische Bauelemente 15-Jul-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 Two 2SA1037AK chips in a package. /circle6 Mounting possible with SOT-363 automatic mounting machines. /circle6 Transistor elements are independent, eliminating interference. /circle6 Mounting cost and area can be cut in half. MARKING ：： ：：
PACKAGE INFORMATION
(T A=25° C unless otherwise noted) Parameter Symbol Value Unit Collector-base voltage V (BR)CBO -60 V Collector-emitter voltage V (BR)CEO -50 V Emitter-base voltage V (BR)EBO -6 V Collector current IC -150 mA Collector Power dissipation P C 150 mW Junction & Storage temperature T J, T STG 150, -55 ~ 150 ℃℃ ℃℃
ELECTRICAL CHARACTERISTICS
(T A=25° C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO -60 - - V IC = -50 µA, I E=0 Collector-emitter breakdown voltage V(BR)CEO -50 - - I C = -1mA , IB=0 Emitter-base breakdown voltage V(BR)EBO -6 - - I E= -50 µA , I C =0 Collector cut-off current I CBO - - -0.1 µA V CB = -60V, I E=0 Emitter cut-off current I EBO - - -0.1 µA V EB = -6V, I C =0 DC current gain h FE 120 - 560 V CE = -6V, I C = -1mA Collector-emitter saturation voltage VCE(sat) - - -0.5 V I C = -50mA, I B= -5mA Transition frequency f T - 140 - MHz VCE = -12V, I E=2mA, f=100MHz Collector output capacitance C ob - - 5 pF V CB =-12V, I E=0, f=1MHz Package MPQ Leader Size SOT-363 3K 7 inch REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.00 2.20 G 0.100 REF. B 2.15 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.15 D 0.90 1.10 K 8° E 1.20 1.40 L 0.650 TYP. F 0.15 0.35 SOT-363 B L F HC JD G K A E 1 2 3 6 5 4