UMN1N SECOS | Alldatasheet
Document overview
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Technical content
0.025A , 80V Plastic-Encapsulated Switching Diode Elektronische Bauelemente 19-Aug-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. B L F H C JD G K A E RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 Small Mold Type /circle6 High Reliability /circle6 Silicon Epitaxial Planar
PACKAGE INFORMATION
(T A=25° C unless otherwise specified) Parameters Symbol Rating Unit Non-Repetitive Peak Reverse Voltage V RM 80 V DC Blocking Voltage VR 80 V Forward Continuous Current I FM 80 mA Average Rectified Output Current I O 25 mA Non-Repetitive Peak Forward Surge Current t=1.0s IFSM 250 mA Operating Junction and Storage Temperature T J, TSTG 150, -55~150 ° C ELECTRICAL CHARACTERISTICS (T A=25° C unless otherwise specified) Parameters Symbol Min. Max. Unit Test Conditions Forward Voltage V F - 0.9 V I F=5mA Maximum DC Reverse Current at rated DC blocking voltage I R - 0.1 µA V R =70V Capacitance between terminals C T - 3.5 pF V R =6V, f=1MHz Maximum Reverse Recovery Time T RR - 4 nS IF=5mA,V R =6V,R L=50 Ω SOT-353 REF. Milli meter REF. Millimeter Min. Max. Min. Max. A 2.00 2.20 G 0.100 REF. B 2.15 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.15 D 0.90 1.10 K 8° E 1.20 1.40 L 0.650 TYP. F 0.15 0.35 Top View
0.025A , 80V Plastic-Encapsulated Switching Diode Elektronische Bauelemente 19-Aug-2011 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES