UMIL10P MICROSEMI | Alldatasheet
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Technical content
R.3.070799 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. UMIL10P
10 Watts, 28 Volts, Class AB
UHF Communications 100 – 400 MHz GENERAL DESCRIPTION The UMIL10P is a COMMON EMITTER broadband transistor specifically intended for use in the 100-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused resistors ensure ruggedness and high reliability. CASE OUTLINE 55FU Style 2 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @25°C 28 W Maximum Voltage and Current Collector to Base Voltage (BVces) 55 V Emitter to Base Voltage (BVebo) 4.0 V Collector Current (Ic) 1.5 A Maximum Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature +200 °C Backside Surface is Gold Metalized ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Power Out F = 400 MHz 10 W Pin Power Input V CC = 28 Volts, Pout = 10W 1.0 W Pg Power Gain 10.0 dB ηc Collector Efficiency 45 50 % VSWR Load Mismatch Tolerance 10:1 ψ FUNCTIONAL CHARACTERISTICS @ 25°C BVebo Emitter to Base Breakdown Ie = 5 mA 4.0 V BVces Collector to Emitter Breakdown Ic = 50 mA 55 V BVceo Collector to Emitter Breakdown Ie = 50 mA 30 V Cob Output Capacitance Vcb = 28V, F = 1 MHz 11.5 PF hFE DC – Current Gain Vce = 5V, Ic = 200mA 10 150 β θjc Thermal Resistance 6.3 °C/W Rev A May 1999