UMH9N SECOS | Alldatasheet
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Any changing of specification will not be informed individual UMH9N NPN Multi-Chip Built-in Resistors Transistor R o H S C o m p l i a n t P r o d u c t http://www.SeCoSGmbH.com Elektronische Bauelemente * Features * Mounting possible with 3automatic mounting * Transistor elements are independent, * Mounting cost and area can be cut in half. eliminating interference. machines. 01-Jan-2006 Rev. B Page 1 of 2 MARKING：H9 Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -6~ 40 V IO 70 Output current IC(MAX) 100 mA Power dissipation Pd 150(T OTAL) mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~ 150 ℃ Electrical characteristics (Ta=25℃) Parameter S ymbol Min. Typ Max. Unit Conditions VI(off) 0.3 VCC=5V ,IO=100μA Input voltage VI(on) 1.4 V VO=0.3V ,IO=1 mA Output voltage VO(on) 0.3 V IO/II=5mA/0.25mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 µA VCC=50V, VI=0 DC current gain GI 68 VO=5V ,IO=5mA Input resistance R1 7 10 13 KΩ Resistance ratio R2/R1 3.7 4.7 5.7 Transition frequency fT 250 MHz VCE=10V ,IE=-5mA,f=100MHz Q 1 R 1R 2 R 2R 1 Q 2 (1)(2)(3) SOT-363 Dimensions in inches and (millimeters) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .055(1.40) .047(1.20) .026TYP (0.65TYP) .096(2.45) .085(2.15) .021REF (0.525)REF .018(0.46) .010(0.26) .006(0.15) .003(0.08) .053(1.35) .045(1.15) .043(1.10) .035(0.90) .039(1.00) .035(0.90) .004(0.10) .000(0.00) o o
Any changing of specification will not be informed individual http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jan-2006 Rev.B Page 2 of 2 !!! Electrical characteristic curves INPUT VOLTAGE : VI(on) (V) OUTPUT CURRENT : IO (A) 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 100 500m 200m 100m VO=0.3V Ta=−40°C 25°C 100°C Fig.1 Input voltage vs. output current (ON characteristics) INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : Io (A) 0 3.0 10m 200µ 500µ 100µ 20µ 50µ 10µ VCC=5V Fig.2 Output current vs. input voltage (OFF characteristics) Ta=100°C 25°C −40°C OUTPUT CURRENT : IO (A) DC CURRENT GAIN : GI 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 500 200 100 VO=5V Ta=100°C 25°C −40°C Fig.3 DC current gain vs. output current OUTPUT CURRENT : IO (A) OUTPUT VOLTAGE : VO(on) (V) 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 500m 200m 100m 50m 20m 10m lO/lI=20 Ta=100°C 25°C −40°C Fig.4 Output voltage vs. output current UMH9N NPN Multi-Chip Built-in Resistors Transistor