UMH3N ROHM | Alldatasheet
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General purpose (dual digital transistors) EMH3 / UMH3N / IMH3A zzzzFeatures 1) Two DTAK13Ts chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. zzzzStructure Epitaxial planar type NPN silicon transistor The following characteristics apply to both DTr1 and DTr2. zzzzEquivalent circuit DTr2 DTr1 (3) (2) (1) (4) (5) (6) R 1 R 1 R 1=4.7kΩ R 1=4.7kΩ DTr2 DTr1 (4) (5) (6) (3) (2) (1) R 1 R 1 EMH3 / UMH3N IMH3A zzzzPackaging specifications Package Taping Code UMH3N EMH3 Type IMH3A T2R 8000 TN 3000 T110 3000 Basic ordering unit (pieces) zzzzExternal dimensions (Units : mm) ROHM : EMT6 ROHM : SMT6 EIAJ : SC-74 EMH3 IMH3A ROHM : UMT6 EIAJ : SC-88 UMH3N Abbreviated symbol : H3 Abbreviated symbol : H3 Abbreviated symbol : H3 Each lead has same dimensions 0.22 1.2 1.6 (1) (2)(5) (3) (6) (4) 0.13 0.5 0.50.5 1.0 1.6 Each lead has same dimensions 0to0.1 (6) 2.0 1.30.9 0.15 0.7 0.1Min. 2.1 0.65 0.2 1.25 (1) 0.65 (4) (3) (2) (5) Each lead has same dimensions (6)(5)(4) 0.3to0.6 0.15 0.3 1.1 0.8 0to0.1 (3) 2.8 1.6 1.9 2.9 0.95 (2) 0.95 (1) Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 For the very latest product data and news visit angliac.com
zzzzAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit VCBO 50 V VCEO 50 V VEBO 5V IC 100 mA Tj 150 °C Tstg −55~+150 °C Pc EMH3,UMH3N 150 (TOTAL) mW IMH3A 300 (TOTAL) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Collector power dissipation ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. zzzzElectrical characteristics (Ta = 25°C) Parameter Symbol BV CBO BV CEO BV EBO ICBO IEBO hFE VCE(sat) R 1 Min. 100 3.29 250 4.7 0.5 0.5 600 0.3 6.11 VI C =50µA IC =1mA IE=50µA VCB =50V VEB =4V VCE =5V, IC =1mA IC /IB=5mA/0.25mA V V µA µA V kΩ Typ. Max. Unit Conditions fT − 250 − VCE =10mA, IE=−5mA, f=100MHz ∗MHz ∗ Transition frequency of the device Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Collector-emitter saturation voltage Input resistance zzzzElectrical characteristic curvesDC CURRENT GAIN : hFE COLLECTOR CURRENT : I C (A) VCE =5V 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m 500 200 100 Ta=100°C 25°C −40°C Fig.1 DC current gain vs. collector current 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m 500m 200m 100m 50m 20m 10m COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) COLLECTOR CURRENT : I C (A) Ta=100°C 25°C −40°C lC /lB=20 Fig.2 Collector-emitter saturation voltage vs. collector current Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 For the very latest product data and news visit angliac.com