UMH15N SECOS | Alldatasheet
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Features
- Two DTC144T chips in a package * Transistor elements are independent, * Mounting cost and area can be cut in half. eliminating interference. 01-Jan-2006 Rev. A Page 1 of 2 MARKING： H15 SOT-363 Dimensions in inches and (millimeters) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .055(1.40) .047(1.20) .026TYP (0.65TYP) .096(2.45) .085(2.15) .021REF (0.525)REF .018(0.46) .010(0.26) .006(0.15) .003(0.08) .053(1.35) .045(1.15) .043(1.10) .035(0.90) .039(1.00) .035(0.90) .004(0.10) .000(0.00) o o Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit Collector-base voltage V(BR)CBO 50 V Collector-emitter voltage V(BR)CEO 50 V Emitter-base voltage V(BR)EBO 5 V Collector current IC 100 mA Collector Power dissipation PC 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~ 150 ℃ Electrical characteristics (Ta=25℃) Parameter Sy mbol Min. Typ Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO 50 V IC=50μA Collector-emitter breakdown voltage V(BR)CEO 50 V IC=1mA Emitter-base breakdown voltage V(BR)EBO 5 V IE=50μA Collector cut-off current ICBO 0.5 μAV CB=50V Emitter cut-off current IEBO 0.5 μAV EB=4V Collector-emitter saturation voltage VCE(sat) 0.3 V IC=10mA,IB=1mA DC current transfer ratio hFE 100 600 VCE=5V,IC=1mA Input resistance R1 32.9 47 61.1 KΩ Transition frequency fT 250 MHz VCE=10V ,IE=-5mA,f=100MHz
http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jan-2006 Rev. A Page 2 of 2 Any changing of specification will not be informed individual Typical Characteristics UMH15N NPN Multi-Chip Built-in Resistors Transistor