UMH13N_15 SECOS | Alldatasheet
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Dual NPN+PNP Digital Transistors (Built-in Resistors) Elektronische Bauelemente 1-Nov-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 Two DTC144T chips in a package. MARKING
PACKAGE INFORMATION
(T A=25° C unless otherwise specified) Parameter Symbol Value Unit Collector-base voltage V CBO 50 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 5 V Collector current IC 100 mA Power dissipation P D 150 mW Junction & Storage temperature T J, T STG 150, -55 ~ 150 ° C ELECTRICAL CHARACTERISTICS (T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V (BR)CBO 50 - - V IC =50µA, I E=0 Collector-emitter breakdown voltage V(BR)CEO 50 - - I C =1mA, I B=0 Emitter-base breakdown voltage V (BR)EBO 5 - - V I E=50µA, I C =0 Collector cut-off current I CBO - - 0.5 µA V CB =50V, I E=0 Emitter cut-off current I EBO - - 0.5 µA V EB =4V, I C =0 Collector-emitter saturation voltage VCE(sat) - - 0.3 V I C =5mA, I B=0.5mA DC current transfer ratio h FE 100 - 600 V CE =5V, I C =1mA Input resistance R 1 32.9 - 61.1 KΩ Transition frequency f T - 250 - MHz V CE =10V, I C =5mA, f=100MHz REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.00 2.20 G 0.100 REF. B 2.15 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.15 D 0.90 1.10 K 8° E 1.20 1.40 L 0.650 TYP. F 0.15 0.35 SOT-363 H13 Top View