UMG4N SECOS | Alldatasheet
Document overview
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Technical content
Dual NPN Digital Transistors (Built-in Resistors) 26-Feb-2016 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 Two DTC114T (NPN) chips in a package. EQUIVALENT CIRCUIT MARKING
PACKAGE INFORMATION
(T A=25° C) Parameter Symbol Value Unit Collector-Base Voltage V (BR)CBO 50 V Collector-Emitter Voltage V (BR)CEO 50 V Emitter-Base Voltage V (BR)EBO 5 V Collector Current IC 100 mA Power Dissipation 1 PD 150 mW Junction and Storage Temperature T J, T STG 150, -55~150 ° C Notes: 1. Each element should not exceed 120mW. ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERIS TICS (T A=25° C) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector-Base Breakdown Voltage V (BR)CBO 50 - - I C =50µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - V IC =1mA, IB=0 Emitter-Base Breakdown Voltage V (BR)EBO 5 - - V I E=50µA, IC =0 Collector Cut-Off Current I CBO - - 500 nA V CB =50V, IE=0 Emitter Cut-Off Current I EBO - - 500 nA V EB =4V, IC =0 Collector-Emitter Saturation Voltage VCE(sat) - - 0.3 V I C =10mA, I B=1mA DC Current Transfer Ration h FE 100 250 600 V CE =5V, I C =1mA Input Resistance R 1 7 10 13 K Ω Transition Frequency f T - 250 - MHz VCE =10V, I E= -5mA, f=100MHz B L F H C JD G K A E SOT-353 A 2.00 2.20 G 0.100 REF. B 2.15 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.15 D 0.90 1.10 K 8° E 1.20 1.40 L 0.650 TYP. F 0.15 0.35
Dual NPN Digital Transistors (Built-in Resistors) 26-Feb-2016 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE