UMG3N FS | Alldatasheet
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Technical content
- 11. 01 1/2 SEMICO NDUCTOR TECH NICAL DATA UMG3N Revision No : 0 Dual NPN Digital Transistor ABSOLUTE MAXIMUM RATINGS Rating Symbol Va lue U nit Collector–Emitter Voltage V CEO 50 Vdc Collector–Base Voltage V CBO 50 Vdc Emitter–Base Voltage V EBO 5.0 Vdc Storage Temperature TJ Tstg –55 to +150 °C Pb-Free Package is Available.
Ordering Information
3000/Tape&Reel 10000/Tape&Reel UMG3N TR UMG3N TR SC-88A R1 R1 DTr1DTr2 (3) (2) (1) (4) (5) R1=4.7kΩ (TA = 25°C) Collector current I C 100 mAdc Collector power dissipation P C 150 mW Junction temperature 150 °C Electrical characteristics(T a = 25°C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) Min. 100 3.29 250 4.7 0.5 0.5 600 0.3 6.11 V I C=50µA IC=1mA IE=50µA VCB=50V VEB=4V VCE=5V, IC=1mA IC/IB=5mA/0.25mA V V µA µA V kΩ Typ. Max. Unit ConditionsfT − 250 − VCE=10V, IE= −5mA, f=100MHzMHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Collector-emitter saturation voltage Input resistance
- 11. 02 2/2Revision No : 0 UMG3N Electrical characteristic curves DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) VCE=5V 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m 500 200 100 Ta=100 C 25 C −40 C Fig.1 DC current gain vs. collector current 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 500m 200m 100m 50m 20m 10m COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (A) Ta=100 C 25 C −40 C lC/lB=20 Fig.2 Collector-emitter saturation voltage vs. collector current SC−88A B0.2 (0.008)M M 1 2 3 A G S D 5 PL H C N J K −B− DIM A MIN MAX MIN MAX MILLIMETERS 1.80 2.200.071 0.087 INCHES B 1.15 1.350.045 0.053 C 0.80 1.100.031 0.043 D 0.10 0.300.004 0.012 G 0.65 BSC0.026 BSC J 0.10 0.250.004 0.010 K 0.10 0.300.004 0.012 N 0.20 REF0.008 REF S 2.00 2.200.079 0.087