UMF4N

UMF4N ROHM | Alldatasheet

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Power management (dual transistors) UMF4N 2SA2018 and DTC123EE are housed independently in a UMT package. !!!!Application Power management circuit !!!!Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. !!!!Structure Silicon epitaxial planar transistor !!!!Equivalent circuits DTr2 Tr1 (1)(2)(3) (4) (5) (6) R1=2.2kΩ R2=2.2kΩ !!!!External dimensions (Units : mm) ROHM : UMT6 EIAJ : SC-88 Each lead has same dimensions 0~0.1 (6) 2.0 1.30.9 0.15 0.7 0.1Min. 2.1 0.65 0.2 1.25 (1) 0.65 (4) (3) (2) (5) !!!!Package, marking, and packaging specifications Type UMF4N UMT6 TR 3000 Package Marking Code Basic ordering unit(pieces)

!!!!Absolute maximum ratings (Ta=25°C) Tr1 Parameter ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits −15 −12 −500 150(TOTAL) 150 −55~+150 −1.0 ∗1 Unit V V V mA A mW Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature DTr2 Parameter ∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. Symbol VCC VIN IC IO PC Tj Tstg Limits −10~+20 100 100 150(TOTAL) 150 −55~+150 Unit V V mA mA mW Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature !!!!Electrical characteristics (Ta=25°C) Tr1 Parameter Symbol Min. Typ. Max. Unit Conditions VCB=−10V, IE=0mA, f=1MHz Transition frequency fT − 260 − MHz VCE=−2V, IE=10mA, f=100MHz BVCEO −12 −− V IC=−1mACollector-emitter breakdown voltage BVCBO −15 −− V IC=−10µACollector-base breakdown voltage BVEBO −6 −− V IE=−10µAEmitter-base breakdown voltage ICBO −− −100 nA V CB=−15VCollector cut-off current IEBO −− −100 nA V EB=−6VEmitter cut-off current VCE(sat) −− 100 −250 mV IC=−200mA, IB=−10mACollector-emitter saturation voltage hFE 270 − 680 − VCE=−2V, IC=−10mADC current gain Cob − 6.5 − pFCollector output capacitance DTr2 Parameter Symbol Min. Typ. Max. Unit Conditions ∗Transition frequency f T − 250 − 1.54 2.86 MHz VCE=10V, IE=−5mA, f=100MHz ∗ Characteristics of built-in transistor. VI(off) −− 0.5 V VCC=5V, IO=100µAInput voltage VI(on) 3.0 −− V VO=0.3V, IO=20mA VO(on) − 100 300 mV VO=10mA, II=0.5mAOutput voltage II −− 3.8 mA V I=5VInput current IO(off) −− 0.5 µAV CC=50V, VI=0VOutput current R1 2.2 kΩ −Input resistance GI 20 −− − VO=5V, IO=20mADC current gain −R2/R1 0.8 1.0 1.2 −Resistance ratio

!!!!Electrical characteristic curves Tr1 100 1000 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics COLLECTOR CURRENT : IC (mA) VCE=2V Pulsed Ta=125 Ta=25 Ta= −40 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.2 DC current gain vs. collector current DC CURRENT GAIN : hFE 1000 100 Ta=125°C Ta=−40°C Ta=25°C VCE=2V Pulsed 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 1000 100 Ta=25°C Pulsed IC/IB=50 IC/IB=20 IC/IB=10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1000 100 Ta=25°C Ta=−40°C Ta=125°C IC/IB=20 Pulsed 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.5 Base-emitter saturation voltage vs. collector current BASER SATURATION VOLTAGE : VBE (sat) (mV) 100 10000 1000 Ta=25°C Ta=−40°C Ta=125°C IC/IB=20 Pulsed 1 10 100 1000 EMITTER CURRENT : IE (mA) Fig.6 Gain bandwidth product vs. emitter current TRANSITION FREQUENCY : fT (MHz) 1000 100 VCE=2V Ta=25°C Pulsed 1 10 1000.1 100 1000 Ta=25°C f=1MHz IE=0A COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Cib Cob 0.01 0.1 1 10 100 EMITTER CURRENT : VCE (V) Fig.8 Safe operation area

0.001 TRANSITION FREQUENCY : IC (A)

0.01 0.1 Ta=25°C Single Pulsed DC 100ms 10ms 1ms

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 100 500m 200m 100m INPUT VOLTAGE : VI(on) (V) OUTPUT CURRENT : IO (A) Fig.9 Input voltage vs. output current (ON characteristics) VO=0.3V Ta=−40°C 25°C 100°C INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : Io (A) 0 3.0 10m 200µ 500µ 100µ 20µ 50µ 10µ VCC=5V Ta=100°C 25°C −40°C Fig.10 Output current vs. input voltage (OFF characteristics) OUTPUT CURRENT : IO (A) DC CURRENT GAIN : GI Fig.11 DC current gain vs. output current VO=5V 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 500 200 100 Ta=100°C 25°C −40°C 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 500m 200m 100m 50m 20m 10m lO/lI=20 OUTPUT CURRENT : IO (A) OUTPUT VOLTAGE : VO (on) (V) Ta=100°C 25°C −40°C Fig.12 Output voltage vs. output current

Appendix1-Rev1.0 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.