DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Dual NPN+PNP Digital Transistors (Built-in Resistors) Elektronische Bauelemente 30-Jun-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. EQUIVALENT CIRCUIT MARKING：D6 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Value Unit Collector-base voltage V (BR)CBO 50 V Collector-emitter voltage V (BR)CEO 50 V Emitter-base voltage V (BR)EBO 5 V Collector current I C 100 mA Collector Power dissipation P C 150 mW Junction & Storage temperature T J, TSTG 150, -55 ~ 150 ℃ ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V (BR)CBO 50 - - V IC= 50A Collector-emitter breakdown voltage V (BR)CEO 50 - - I C= 1mA Emitter-base breakdown voltage V (BR)EBO 5 - - V I E= 50A Collector cut-off current I CBO - - 0.5 A V CB= 50V Emitter cut-off current I EBO - - 0.5 A V EB= 4V Collector-emitter saturation voltage V CE(sat) - - 0.3 V I C= 5mA, IB= 0.25mA DC current transfer ratio h FE 100 - 600 V CE= 5V, IC= 1mA Input resistance R 1 3.29 4.7 6.11 K Transition frequency f T - 250 - MHz VCE= 10V, IE= -5mA, f=100MHz REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.00 2.20 G 0.100 REF. B 2.15 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.15 D 0.90 1.10 K 8° E 1.20 1.40 L 0.650 TYP. F 0.15 0.35 SOT-363 B L F HC JD G K A E
Dual NPN+PNP Digital Transistors (Built-in Resistors) Elektronische Bauelemente 30-Jun-2010 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE