UMD3N

UMD3N SECOS | Alldatasheet

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• DTA114E and DTC114E transistors are built-in a SOT-363 package. * Transistor elements are independent, eliminating interference. * Mounting cost and area can be cut in half. Electrical Characteristics( Tamb=25 O C unless otherwise specified) 01-Jan-2006 Rev. B Page 1 of 2 DTr2 DTr1 (3) (2) (4) (5) R1 R R1=R2=10K MARKING:D3 Parameter Symbol Limits Unit (1) (6) Supply voltage VCC 50 V Input voltage VIN -10~40 V IO 50 Output current IC(MAX) 100 mA Power dissipation Pd 150(TOTAL) mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions VI(off) 0.5 VCC=5V ,IO=100μA Input voltage VI(on) 3 V VO=0.3V ,IO=10mA Output voltage VO(on) 0.3 V I O/II=10mA/0.5mA Input current II 0.88 mA V I=5V Output current IO(off) 0.5 µA V CC=50V, VI=0 DC current gain GI 30 V O=5V,IO=5mA Input resistance R1 7 10 13 K Ω Resistance ratio R2/R1 0.8 1 1.2 Transition frequency fT 250 MHz V CE=10V ,IE=-5mA,f=100MHz SOT-363 Dimensions in inches and (millimeters) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .055(1.40) .047(1.20) .026TYP (0.65 TYP) .096(2.45) .085(2.15) .021REF (0.525)REF .018(0.46) .010(0.26) .006(0.15) .003(0.08) .053(1.35) .045(1.15) .043(1.10) .035(0.90) .039(1.00) .035(0.90) .004(0.10) .000(0.00) o o 1 2 3 456

Any changing of specification will not be informed individual UMD3N NPN-PNP built-in resistors Multi-Chip Digital Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jan-2006 Rev. B Page 2 of 2 DT r1 (NPN) INPUT VOLTAGE : VI (on) (V) OUTPUT CURRENT : IO (A) 100 µ 200 µ 500 µ 1m 2m 5m 10m 20m 50m 100m 100 500m 200m 100m VO=0.3V Ta= − 40˚C 25˚C 100˚C Fig.1 Input voltage vs. output current (ON characteristics) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : Io (A) 10m 200µ 500µ 100µ 20µ 50µ 10µ 0.5 1 1.5 2 2.5 VCC=5V Ta=100˚C 25˚C 40˚C Fig.2 Output current vs. input voltage (OFF characteristics) OUTPUT CURRENT : IO (A) DC CURRENT GAIN : GI 100 µ 200 µ 500 µ 1m 2m 5m 10m 20m 50m 100m 500 200 100 VO=5V Ta=100˚C 25˚C 40˚C Fig.3 DC current gain vs. output current OUTPUT CURRENT : IO (A) OUTPUT VOLTAGE : VO (on) (V) 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 500m 200m 100m 50m 20m 10m lO/lI=20 Ta=100˚C 25˚C 40˚C Fig.4 Output voltage vs. output current DT r2 (PNP) VO= −0.3V INPUT VOLTAGE : VI (on) (V) OUTPUT CURRENT : IO (A) −100 −50 −20 −10 −200m −100m − 100µ − 1m − 10m − 100m− 200µ − 2m − 20m− 500µ − 5m − 50m −500m 25˚C 100˚C Ta= − 40˚C Fig.5 Input voltage vs. output current (ON characteristics) VCC= −5V 0 − 3 − 10m µ 200 µ 500 µ 100 µ µ µ µ µ µ INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : Io (A) Ta=100˚ C 25˚ C − 40˚C Fig.6 Output current vs. input voltage (OFF characteristics) VO= − 5V Ta=100˚ C 25˚ C − 40˚C DC CURRENT GAIN : GI OUTPUT CURRENT : IO (A) 500 200 100 − 100 µ− 1m − 10m − 100m − 200 µ− 2m − 20m − 500 µ− 5m − 50m Fig.7 DC current gain vs. output current lO/lI=20 Ta=100˚C 25˚C − 40˚C − 1 500m 200m 100m 10m 50m 20m OUTPUT CURRENT : IO (A) OUTPUT VOLTAGE : VO (on) (V) − 100 µ − 1m − 10m − 100m − 200 µ − 2m − 20m − 500 µ− 5m − 50m Fig.8 Output voltage vs. output current