UMD2N SECOS | Alldatasheet

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  • DTA124E and DTC124E transistors are built-in a SOT-363 package. * Transistor elements are independent, eliminating interference. * Mounting cost and area can be cut in half. Electrical Characteristics( Tamb=25 O C unless otherwise specified) 01-Jan-2006 Rev. A Page 1 of 3 DTr2 DTr1 (3) (2) (4) (5) R1 R R1=R2=22K MARKING:D2 Parameter Symbol Limits Unit (1) (6) Supply voltage VCC 50 V Input voltage VIN -10~ 40 V IO 30 Output current IC(MAX) -100 mA Power dissipation Pd 150(T OTAL) mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~ 150 ℃ Electrical characteristics (Ta=25℃) Parameter Sy mbol Min. Typ Max. Unit Conditions VI(off) 0.5 VCC=5V ,IO=100μA Input voltage VI(on) 3 V VO=0.2V ,IO=10mA Output voltage VO(on) 0.3 V I O/II=10mA/0.5mA Input current II 0.36 mA V I=5V Output current IO(off) 0.5 µA V CC=50V, VI=0 DC current gain GI 56 V O=5V,IO=5mA Input resistance R1 15.4 22 28.6 K Ω Resistance ratio R2/R1 0.8 1 1.2 Transition frequency fT 250 MHz V CE=10V ,IE=-5mA,f=100MHz SOT-363 Dimensions in inches and (millimeters) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .055(1.40) .047(1.20) .026TYP (0.65TYP) .096(2.45) .085(2.15) .021REF (0.525)REF .018(0.46) .010(0.26) .006(0.15) .003(0.08) .053(1.35) .045(1.15) .043(1.10) .035(0.90) .039(1.00) .035(0.90) .004(0.10) .000(0.00) o o

Any changing of specification will not be informed individual UMD2N NPN-PNP built-in resistors Multi-Chip Digital Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jan-2006 Rev. A Page 2 of 3 DTr1 (NPN)

Any changing of specification will not be informed individual UMD2N NPN-PNP built-in resistors Multi-Chip Digital Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jan-2006 Rev. A Page 3 of 3