UMC2NT1G ONSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • Available in 8 mm, 7 inch/3000 Unit Tape and Reel
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Thermal Resistance − Junction-to-Ambient (surface mounted) R/C0113JA 833 °C/W Operating and Storage Temperature Range TJ, Tstg −65 to +150 Total Package Dissipation @ TA = 25°C (Note 1) PD *150 mW 1. Device mounted on a FR-4 glass e poxy printed circuit board using the minimum recommended footprint. SC−88A/SOT−353 CASE 419A STYLE 6 Ux = Device Marking x = 2, 3 or 5 M = Date Code /C0071 = Pb−Free Package MARKING DIAGRAM 13 2 Preferred devices are recommended choices for future use and best overall value. R1 R2 31 2 See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

http://onsemi.com Ux M /C0071 /C0071 (Note: Microdot may be in either location)

UMC2NT1G, UMC3NT1G, UMC5NT1G http://onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current UMC2NT1G (VEB = 6.0, IC = 0 mA) UMC3NT1G UMC5NT1G / T2G IEBO − 0.2 0.5 1.0 mAdc ON CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 /C0109A, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc DC Current Gain UMC2NT1G (VCE = 10 V, IC = 5.0 mA) UMC3NT1G UMC5NT1G / T2G hFE 60 100 Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(SAT) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k/C0087) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k/C0087) VOH 4.9 − − Vdc Input Resistor UMC2NT1G UMC3NT1G UMC5NT1G / T2G R1 15.4 7.0 3.3 4.7 28.6 6.1 k/C0087 Resistor Ratio UMC2NT1G UMC3NT1G UMC5NT1G / T2G R1/R2 0.8 0.8 0.38 1.0 1.0 0.47 1.2 1.2 0.56 Q2 TRANSISTOR: NPN OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current UMC2NT1G (VEB = 6.0, IC = 0 mA) UMC3NT1G UMC5NT1G / T2G IEBO − 0.2 0.5 0.1 mAdc ON CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 /C0109A, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc DC Current Gain UMC2NT1G (VCE = 10 V, IC = 5.0 mA) UMC3NT1G UMC5NT1G / T2G hFE 60 100 140 Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(SAT) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k/C0087) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k/C0087) VOH 4.9 − − Vdc Input Resistor UMC2NT1G UMC3NT1G UMC5NT1G / T2G R1 15.4 7.0 28.6 k/C0087 Resistor Ratio UMC2NT1G UMC3NT1G UMC5NT1G / T2G R1/R2 0.8 0.8 0.8 1.0 1.0 1.0 1.2 1.2 1.2

UMC2NT1G, UMC3NT1G, UMC5NT1G http://onsemi.com Device Package Shipping† UMC2NT1G SC−88A/SOT−353 (Pb−Free) 3000 / Tape & Reel UMC3NT1G SC−88A/SOT−353 (Pb−Free) 3000 / Tape & Reel UMC3NT2G SC−88A/SOT−353 (Pb−Free) 3000 / Tape & Reel UMC5NT1G SC−88A/SOT−353 (Pb−Free) 3000 / Tape & Reel UMC5NT2G SC−88A/SOT−353 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING AND RESISTOR VALUES Device Marking Transistor 1 − PNP Transistor 2 − NPN R1 (K) R2 (K) R1 (K) R2 (K) UMC2NT1G UMC3NT1G UMC3NT2G UMC5NT1G UMC5NT2G 4.7 4.7 47Figure 1. Derating Curve 250 200 150 100 0-/C820250 0 50 100 150 TA, AMBIENT TEMPERATURE (°C) PD, POWER DISSIPATION (MILLIWATTS) R/C0113JA = 833°C/W

UMC2NT1G, UMC3NT1G, UMC5NT1G http://onsemi.com PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A −01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A MIN MAX MIN MAX MILLIMETERS 1.80 2.200.071 0.087 INCHES B 1.15 1.350.045 0.053 C 0.80 1.100.031 0.043 D 0.10 0.300.004 0.012 G 0.65 BSC0.026 BSC J 0.10 0.250.004 0.010 K 0.10 0.300.004 0.012 N 0.20 REF0.008 REF S 2.00 2.200.079 0.087 B0.2 (0.008) MM 12 3 A G S D 5 PL H C N J K −B− SC−88A, SOT−353, SC−70 CASE 419A−02 ISSUE J *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* /C0466mm inches/C0467SCALE 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 STYLE 6: PIN 1. EMITTER 2 2. BASE 2 3. EMITTER 1 4. COLLECTOR 5. COLLECTOR 2/BASE 1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a sit uation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in a ny manner. UMC2NT1/D PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative