UMC5N DIODES | Alldatasheet

Document overview

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  • PDF pages: 4

Technical content

Features

  • Epitaxial Planar Die Construction
  • Surface Mount Package Suited for Automated Assembly
  • Simplifies Circuit Design and Reduces Board Space
  • Lead Free/RoHS Compliant (Note 1)
  • "Green" Device (Note 2) Mechanical Data
  • Case: SOT-353
  • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020C
  • Terminal Connections: See Diagram
  • Terminals: Finish – Matte Tin Annealed Over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208
  • Marking Information: See Page 4
  • Ordering Information: See Page 4
  • Weight: 0.006 grams (approximate) NEW PRODUCT SOT-353 321 4 5 TOP VIEW R1 R2 (3) (2) (1) (4) (5) R = 4 7 k1 Ω R = 4 7 k2 Ω R = 1 0 k2 Ω R = 4 . 7 k1 Ω Schematic and Pin Configuration Maximum Ratings, Total Device @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 3) PD 150 mW Thermal Resistance, Junction to Ambient Air (Note 3) RθJA 833 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Maximum Ratings, Pre-Biased NPN Transistor, Q1 @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage VCC 50 V Input Voltage VIN -10 to +40 V Output Current IO 30 mA Collector Current IC(MAX) 100 mA Maximum Ratings, Pre-Biased PNP Transistor, Q2 @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage VCC -50 V Input Voltage VIN -20 to +7 V Output Current IO -100 mA Collector Current IC(MAX) -100 mA Notes: 1. No purposefully added lead. 3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

DS31205 Rev. 3 - 2 2 of 4 www.diodes.com UMC5N © Diodes Incorporated Electrical Characteristics, Pre-Biased NPN Transistor, Q1 @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition VI(off) ⎯ ⎯ 0.5 V VCC = 5V, IO = 100μA Input Voltage VI(on) 3 ⎯ ⎯ V VO = 0.3V, IO = 2mA Output Voltage VO(on) ⎯ 0.1 0.3 V IO/ II = 10mA/0.5 mA Input Current II ⎯ ⎯ 0.18 mA VI = 5V Output Current IO(off) ⎯ ⎯ 0.5 μA VCC = 50V, VI = 0V DC Current Gain GI 68 ⎯ ⎯ ⎯ VO = 5V, IO = 5mA Gain-Bandwidth Product fT ⎯ 250 ⎯ MHz VCE = 10V, IE = -5mA, f = 100MHz* Input Resistance R1 32.9 47 61.1 kΩ ⎯ Resistance Ratio R2/R1 0.8 1 1.2 ⎯ ⎯ NEW PRODUCT *Characteristics of Transistor – for reference only. Electrical Characteristics, Pre-Biased PNP Transistor, Q2 @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition VI(off) ⎯ ⎯ -0.3 V VCC = -5V, IO = -100μA Input Voltage VI(on) -2.5 ⎯ ⎯ V VO = -0.3V, IO = -20mA Output Voltage VO(on) ⎯ -0.1 -0.3 V IO/ II = -10mA/-0.5 mA Input Current II ⎯ ⎯ -1.8 mA VI = -5V Output Current IO(off) ⎯ ⎯ -0.5 μA VCC = -50V, VI = 0V DC Current Gain GI 30 ⎯ ⎯ ⎯ VO = -5V, IO = -10mA Gain-Bandwidth Product fT ⎯ 250 ⎯ MHz VCE = -10V, IE = 5mA, f = 100MHz* Input Resistance R1 3.29 4.7 6.11 kΩ ⎯ Resistance Ratio R2/R1 1.7 2.1 2.6 ⎯ ⎯ *Characteristics of Transistor – for reference only. 100 1,000 I , OUTPUT CURRENT (mA)O Fig. 1 Typical DC Current Gain vs. Output Current (Q1, NPN) T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 150°CA V = 5 VO 0.1 1 10 100 T = -55°CA T = 2 5 ° CA T = 85°CA T = 150°CA I/ I = 2 0OI

DS31205 Rev. 3 - 2 3 of 4 www.diodes.com UMC5N © Diodes Incorporated 0.1 0.01 0.1 1 10 T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 150°CA V = 5 VCC 0.1 0.01 0.1 1 10 100 T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 150°CA V = 0.3VO T = -55°CA T = 25°CA T = 85°CA T = 150°CA V = - 5 VO 0.01 0.1 11 0 -I , OUTPUT CURRENT (mA)O NEW PRODUCT 100 Fig. 6 Typical Output Voltage vs. Output Current (Q2, PNP) T = -55°CA T = 25°CA T = 8 5 ° CA T = 150°CA I/ I = 2 0OI 0.1 0.01 0.1 1 10 -I , OUTPUT CURRENT (mA)O Fig. 7 Typical Input Off Voltage vs. Output Current (Q2, PNP) T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 150°CA V = - 5 VCC 0.1 -I , OUTPUT CURRENT (mA)O Fig. 8 Typical Input ON Voltage vs. Output Current (Q2, PNP) T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 150°CA V = - 0 . 3 VO

DS31205 Rev. 3 - 2 4 of 4 www.diodes.com UMC5N © Diodes Incorporated Ordering Information (Note 4) Device Packaging Shipping UMC5N-7 SOT-353 3000/Tape & Reel Marking Information NEW PRODUCT NP2 YM NP2 = Product Type Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September Date Code Key Year 2007 2008 2009 2010 2011 2012 Code U V W X Y Z Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Package Outline Dimensions A M J LD B C H K F TOP VIEW SOT-353 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ⎯ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8° All Dimensions in mm IMPORTANT NOTICE Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. Diodes Incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.