UMC4N
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 6
Technical content
Features
Ultra-Small Surface Mount Package Epitaxial Planar Die Construction Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (UMC4NQ) Mechanical Data Case: SOT353 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Finish. Solderable per MIL-STD- 202, Method 208 Weight: 0.006 grams (Approximate) Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inch) Tape Width (mm) Quantity per Reel UMC4N-7 AEC-Q101 NP1 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Date Code Key Year 2017 2018 2019 2020 2021 2022 2023 2024 Code E F G H I J K L Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View Bottom View Device Schematic Package Pin Out Configuration R1 R2 (3) (2) (1) (4) (5) R = 47k1 R = 47k2 R = 10k1 R = 47k2 3 2 1 4 5 SOT353 NP1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 2017) M = Month (ex: 9 = September) NP1 YM
Document number: DS31203 Rev. 6 - 2 2 of 6 www.diodes.com February 2017 © Diodes Incorporated UMC4N Absolute Maximum Ratings, Pre-Biased NPN Transistor, Q1 (@TA = +25° C unless otherwise specified.) Characteristic Symbol Value Unit Supply Voltage VCC 50 V Input Voltage VIN -10 to +40 V Output Current IO 30 mA Collector Current IC 100 mA Absolute Maximum Ratings, Pre-Biased PNP Transistor, Q2 (@TA = +25° C unless otherwise specified.) Characteristic Symbol Value Unit Supply Voltage VCC -50 V Input Voltage VIN -40 to +6 V Output Current IO -100 mA Collector Current IC -100 mA Thermal Characteristics (@TA = +25° C unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 150 mW Thermal Resistance, Junction to Ambient Air (Note 5) RJA 833 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Note: 5. For the device mounted on minimum recommended pad layout FR -4 PCB with high coverage of single sided 1oz copper, in still air conditions ; the device is measured when operating in a steady-state condition. Electrical Characteristics, Pre-Biased NPN Transistor, Q1 (@TA = +25° C unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage (Note 6) VI(OFF) 0.5 V VCC = 5V, IO = 100A (Note 7) VI(ON) 3 V VO = 0.3V, IO = 2mA Output Voltage VO(ON) 0.1 0.3 V IO / II = 10mA/0.5 mA Input Current II 0.18 mA VI = 5V Output Current IO(OFF) 0.5 A VCC = 50V, VI = 0V DC Current Gain GI 68 VO = 5V, IO = 5mA Gain-Bandwidth Product (Note 8) fT 250 MHz VCE = 10V, IE = -5mA, f = 100MHz Input Resistance R1 32.9 47 61.1 k Resistance Ratio R2/R1 0.8 1 1.2 Notes: 6. The device is guaranteed to be in “OFF” state with VI(OFF) up to 0.5V. 7. The device is guaranteed to be in “ON” state with VI(ON) starting from 3V. 8. Characteristic of Transistor – for reference only. Electrical Characteristics, Pre-Biased PNP Transistor, Q2 (@TA = +25° C unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage (Note 9) VI(OFF) -0.3 V VCC = -5V, IO = -100A (Note 10) VI(ON) -1.4 V VO = -0.3V, IO = -1mA Output Voltage VO(ON) -0.1 -0.3 V IO/ II = -5mA/-0.25 mA Input Current II -0.88 mA VI = -5V Output Current IO(OFF) -0.5 A VCC = -50V, VI = 0V DC Current Gain GI 68 VO = -5V, IO = -5mA Gain-Bandwidth Product (Note 11) fT 250 MHz VCE = -10V, IE = 5mA, f = 100MHz Input Resistance R1 7 10 13 k Resistance Ratio R2/R1 3.7 4.7 5.7 Notes: 9. The device is guaranteed to be in “OFF” state with VI(OFF) up to -0.3V. 10. The device is guaranteed to be in “ON” state with VI(ON) starting from -1.4V. 11. Characteristic of Transistor – for reference only.
Document number: DS31203 Rev. 6 - 2 3 of 6 www.diodes.com February 2017 © Diodes Incorporated UMC4N Typical Electrical Characteristics (@TA = +25° C unless otherwise specified.) 100 1,000 I , OUTPUT CURRENT (mA) O Fig. 1 Typical DC Current Gain vs. Output Current (Q1, NPN) T = -55° C A T = 25° C A T = 85° C A T = 150° C A V = 5V O 0.1 1 10 100 T = -55° C A T = 25° C A T = 85° C A T = 150° C A I /I = 20 O I 0.1 0.01 0.1 1 10 T = -55° C A T = 25° C A T = 85° C A T = 150° C A V = 5V CC 0.1 0.01 0.1 1 10 100 T = -55° C A T = 25° C A T = 85° C A T = 150° C A V = 0.3V O
Document number: DS31203 Rev. 6 - 2 4 of 6 www.diodes.com February 2017 © Diodes Incorporated UMC4N Typical Electrical Characteristics (Cont.) (@TA = +25° C unless otherwise specified.) T = -55° C A T = 25° C A T = 85° C A T = 150° C A V = -5V O 0.01 0.1 0.1 1 10 100 -I , OUTPUT CURRENT (mA) O Fig. 6 Typical Output Voltage vs. Output Current (Q2, PNP) T = -55° C A T = 25° C A T = 85° C A T = 150° C A I /I = 20 O I 0.1 0.01 0.1 1 10 -I , OUTPUT CURRENT (mA) O Fig. 7 Typical Input Off Voltage vs. Output Current (Q2, PNP) T = -55° C A T = 25° C A T = 85° C A T = 150° C A V = -5V CC 0.1 -I , OUTPUT CURRENT (mA) O Fig. 8 Typical Input ON Voltage vs. Output Current (Q2, PNP) T = -55° C A T = 25° C A T = 85° C A T = 150° C A V = -0.3V O
Document number: DS31203 Rev. 6 - 2 5 of 6 www.diodes.com February 2017 © Diodes Incorporated UMC4N Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT353 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT353 SOT353 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 1.00 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0° 8° -- All Dimensions in mm Dimensions Value (in mm) C 0.650 C1 1.900 G 1.300 X 0.420 X1 1.720 Y 0.600 Y1 2.500 E b F D A1 e c L a CX Y G
Document number: DS31203 Rev. 6 - 2 6 of 6 www.diodes.com February 2017 © Diodes Incorporated UMC4N IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described h erein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any uninten ded or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product nam es and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. suppor t or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated product s in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorpora ted and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com